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Deep Jariwala

Publications and source records attributed to Deep Jariwala.

At least 55 records · Page 3Linked to original sources
arXiv2024

2D ferroelectrics and ferroelectrics with 2D: materials and device prospects

Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc. In this Perspective, we investigate the research topics where 2D semiconductors and ferroelectric materials both in 2D or 3D form come together. 2D semiconductors have unique attributes due to their van der Waals nature that permits their facile integration with any other electronic or optical materials. In addition, the emergence of ferroelectricity in 2D monolayers, multilayers, and artificial structures offers further advantages since traditionally ferroelectricity has been difficult to achieve in extremely thickness scaled materials. In this perspective, we elaborate on the applications of 2D materials + ferroelectricity in non-volatile memory devices highlighting their potential for in-memory computing, neuromorphic computing, optoelectronics, and spintronics. We also suggest the challenges posed by both ferroelectrics and 2D materials, including material/device preparation, and reliable characterizations to drive further investigations at the interface of these important classes of electronic materials.

physics.app-ph↗
arXiv2024

Giant Optical Anisotropy in 2D Metal-Organic Chalcogenates

Optical anisotropy is a fundamental attribute of some crystalline materials and is quantified via birefringence. A birefringent crystal not only gives rise to asymmetrical light propagation but also attenuation along two distinct polarizations, a phenomenon called linear dichroism (LD). Two-dimensional (2D) layered materials with high in- and out-of-plane anisotropy have garnered interest in this regard. Mithrene, a 2D metal-organic chalcogenate (MOCHA) compound, exhibits strong excitonic resonances due to its naturally occurring multi-quantum well (MQW) structure and in-plane anisotropic response in the blue wavelength (~400-500 nm) regime. The MQW structure and the large refractive indices of mithrene allow the hybridization of the excitons with photons to form self-hybridized exciton-polaritons in mithrene crystals with appropriate thicknesses. Here, we report the giant birefringence (~1.01) and tunable in-plane anisotropic response of mithrene, which stem from its low symmetry crystal structure and unique excitonic properties. We show that the LD in mithrene can be tuned by leveraging the anisotropic exciton-polariton formation via the cavity coupling effect exhibiting giant in-plane LD (~77.1%) at room temperature. Our results indicate that mithrene is an ideal polaritonic birefringent material for polarization-sensitive nanophotonic applications in the short wavelength regime.

physics.optics↗
arXiv2024

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE-diodes scaled to 5, 10, and 20 nm FE Al0.72Sc0.28N/Al0.64Sc0.36N films. Through interlayer (IL) engineering, we show substantial improvements in the ON/OFF ratios (>166 times) and rectification ratios (>176 times) in these scaled devices. The superlative characteristics also enables 5-bit multi-state operation with a stable retention. We also experimentally and theoretically demonstrate the counterintuitive result that the inclusion of an IL can lead to a decrease in the ferroelectric switching voltage of the device. An in-depth analysis into the device transport mechanisms is performed, and our compact model aligns seamlessly with the experimental results. Our results suggest the possibility of using scaled AlxSc1-xN FE-diodes for high performance, low-power, embedded NVM.

cond-mat.mtrl-sci↗
arXiv2023

Near 6 GHz Sezawa Mode Surface Acoustic Wave Resonators using AlScN on SiC

Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal resistance, substantial piezoelectric response, simplified fabrication, as well as suitability for high-temperature and harsh environment operation. This study presents high-frequency SAW resonators employing AlScN thin films on SiC substrates, utilizing the second SAW mode (referred to as the Sezawa mode). The resonators achieve remarkable performance, boasting a K2 value of 5.5% and a maximum Q-factor (Qmax) of 1048 at 4.7 GHz, outperforming previous benchmarks. Additionally, a SAW resonator with a 960 nm wavelength attains 5.9 GHz frequency with record K2 (4.0%) and Qmax (887). Our study underscores the potential of the AlScN on SiC platform for advanced radio-frequency applications.

physics.app-ph↗
arXiv2023

Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices.

cond-mat.mes-hall↗
arXiv2023

Highly tunable room-temperature plexcitons in monolayer WSe2 /gap-plasmon nanocavities

The advancement of quantum photonic technologies relies on the ability to precisely control the degrees of freedom of optically active states. Here, we realize real-time, room-temperature tunable strong plasmon-exciton coupling in 2D semiconductor monolayers enabled by a general approach that combines strain engineering plus force- and voltage-adjustable plasmonic nanocavities. We show that the exciton energy and nanocavity plasmon resonance can be controllably toggled in concert by applying pressure with a plasmonic nanoprobe, allowing in operando control of detuning and coupling strength, with observed Rabi splittings >100 meV. Leveraging correlated force spectroscopy, nano-photoluminescence (nano-PL) and nano-Raman measurements, augmented with electromagnetic simulations, we identify distinct polariton bands and dark polariton states, and map their evolution as a function of nanogap and strain tuning. Uniquely, the system allows for manipulation of coupling strength over a range of cavity parameters without dramatically altering the detuning. Further, we establish that the tunable strong coupling is robust under multiple pressing cycles and repeated experiments over multiple nanobubbles. Finally, we show that the nanogap size can be directly modulated via an applied DC voltage between the substrate and plasmonic tip, highlighting the inherent nature of the concept as a plexcitonic nano-electro-mechanical system (NEMS). Our work demonstrates the potential to precisely control and tailor plexciton states localized in monolayer (1L) transition metal dichalcogenides (TMDs), paving the way for on-chip polariton-based nanophotonic applications spanning quantum information processing to photochemistry.

physics.optics↗
arXiv2023

Analog Content-Addressable Memory from Complementary FeFETs

To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive operations, like parallel search, have been overlooked. Current parallel search architectures, namely content-addressable memory (CAM), often use binary, which restricts density and functionality. We present an analog CAM (ACAM) cell, built on two complementary ferroelectric field-effect transistors (FeFETs), that performs parallel search in the analog domain with over 40 distinct match windows. We then deploy it to calculate similarity between vectors, a building block in the following two machine learning problems. ACAM outperforms ternary CAM (TCAM) when applied to similarity search for few-shot learning on the Omniglot dataset, yielding projected simulation results with improved inference accuracy by 5%, 3x denser memory architecture, and more than 100x faster speed compared to central processing unit (CPU) and graphics processing unit (GPU) per similarity search on scaled CMOS nodes. We also demonstrate 1-step inference on a kernel regression model by combining non-linear kernel computation and matrix multiplication in ACAM, with simulation estimates indicating 1,000x faster inference than CPU and GPU.

cs.ET↗
arXiv2023

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C

Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices operating at very high temperatures (> 500 $^\circ$C) given its stable and high remnant polarization (PR) above 100 $μ$C/cm$^2$ with demonstrated ferroelectric transition temperature (TC) > 1000 $^\circ$C. Here, we demonstrate an Al$_{0.68}$Sc$_{0.32}$N ferroelectric diode based NVM device that can reliably operate with clear ferroelectric switching up to 600 $^\circ$C with distinguishable On and Off states. The coercive field (EC) from the Pulsed I-V measurements is found to be -5.84 (EC-) and +5.98 (EC+) (+/- 0.1) MV/cm at room temperature (RT) and found to decrease with increasing temperature up to 600 $^\circ$C. The devices exhibit high remnant polarizations (> 100 $μ$C/cm$^2$) which are stable at high temperatures. At 500 $^\circ$C, our devices show 1 million read cycles and stable On-Off ratio above 1 for > 6 hours. Finally, the operating voltages of our AlScN ferrodiodes are < 15 V at 600 $^\circ$C which is well matched and compatible with Silicon Carbide (SiC) based high temperature logic technology, thereby making our demonstration a major step towards commercialization of NVM integrated high-T computers.

physics.app-ph↗
arXiv2023

Ultrastrong Light-Matter Coupling in 2D Metal-Chalcogenates

Hybridization of excitons with photons to form hybrid quasiparticles, exciton-polaritons (EPs), has been widely investigated in a range of semiconductor material systems coupled to photonic cavities. Self-hybridization occurs when the semiconductor itself can serve as the photonic cavity medium resulting in strongly-coupled EPs with Rabi splitting energies > 200 meV at room temperatures which recently were observed in layered two-dimensional (2D) excitonic materials. Here, we report an extreme version of this phenomenon, an ultrastrong EP coupling, in a nascent, 2D excitonic system, the metal organic chalcogenate (MOCHA) compound named mithrene. The resulting self-hybridized EPs in mithrene crystals placed on Au substrates show Rabi Splitting in the ultrastrong coupling range (> 600 meV) due to the strong oscillator strength of the excitons concurrent with the large refractive indices of mithrene. We further show bright EP emission at room temperature as well as EP dispersions at low-temperatures. Importantly, we find lower EP emission linewidth narrowing to ~1 nm when mithrene crystals are placed in closed Fabry-Perot cavities. Our results suggest that MOCHA materials are ideal for polaritonics in the deep green-blue part of the spectrum where strong excitonic materials with large optical constants are notably scarce.

physics.optics↗
arXiv2023

MoS$_{2}$/Al$_{0.68}$Sc$_{0.32}$N negative capacitance field-effect transistors

Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characteristics of a MoS$_{2}$ negative capacitance FET (NCFET) based on an AlScN ferroelectric material. We experimentally demonstrate the effect of a dielectric layer in the gate stack on the memory window and subthreshold swing (SS) of the NCFET. We show that the hysteresis behavior of transfer characteristics in the NCFET can be minimized with the inclusion of a non-ferroelectric dielectric layer, which fulfills the capacitance-matching condition. Remarkably, we also observe the NC effect in MoS$_{2}$/AlScN NCFETs arrays based on large-area monolayer MoS$_{2}$ synthesized by chemical vapor deposition, showing the SS values smaller than its thermionic limit (~36-60 mV/dec) and minimal variation in threshold voltages (< 20 mV).

cond-mat.mtrl-sci↗
arXiv2023

Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures

Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.

cond-mat.mes-hall↗
arXiv2023

Ultra-fast Vacancy Migration: A Novel Approach for Synthesizing Sub-10 nm Crystalline Transition Metal Dichalcogenide Nanocrystals

Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with < 10 nm size using ultra-fast migration of vacancies at elevated temperatures. Through in-situ and ex-situ processing and using atomic-level characterization techniques, we analyze the shape, size, crystallinity, composition, and strain distribution of these nanocrystals. These nanocrystals exhibit electronic structure signatures that differ from the 2D bulk i.e., uniform mono and multilayers. Further, our in-situ, vacuum-based synthesis technique allows observation and comparison of defect and phase evolution in these crystals formed under van der Waals heterostructure confinement versus unconfined conditions. Overall, this research demonstrates a solid-state route to synthesizing uniform nanocrystals of TMDCs and lays the foundation for materials science in confined 2D spaces under extreme conditions.

cond-mat.mtrl-sci↗
arXiv2023

Tailoring Exciton Dynamics in TMDC Heterobilayers in the Quantum Plasmonic Regime

Control of excitons in transition metal dichalcogenides (TMDCs) and their heterostructures is fundamentally interesting for tailoring light-matter interactions and exploring their potential applications in high-efficiency optoelectronic and nonlinear photonic devices. While both intra- and interlayer excitons in TMDCs have been heavily studied, their behavior in the quantum tunneling regime, in which the TMDC or its heterostructure is optically excited and concurrently serves as a tunnel junction barrier, remains unexplored. Here, using the degree of freedom of a metallic probe in an atomic force microscope, we investigated both intralayer and interlayer excitons dynamics in TMDC heterobilayers via locally controlled junction current in a finely tuned sub-nanometer tip-sample cavity. Our tip-enhanced photoluminescence measurements reveal a significantly different exciton-quantum plasmon coupling for intralayer and interlayer excitons due to different orientation of the dipoles of the respective e-h pairs. Using a steady-state rate equation fit, we extracted field gradients, radiative and nonradiative relaxation rates for excitons in the quantum tunneling regime with and without junction current. Our results show that tip-induced radiative (nonradiative) relaxation of intralayer (interlayer) excitons becomes dominant in the quantum tunneling regime due to the Purcell effect. These findings have important implications for near-field probing of excitonic materials in the strong-coupling regime.

cond-mat.mes-hall↗
arXiv2023

Gate-Tunable Optical Anisotropy in Wafer-Scale, Aligned Carbon-Nanotube Films

Telecommunications and polarimetry both require the active control of the polarization of light, Currently, this is done by combining intrinsically anisotropic materials with tunable isotropic materials into heterostructures using complicated fabrication techniques due to the lack of scalable materials that possess both properties. Tunable birefringent and dichromic materials are scarce and rarely available in high-quality thin films over wafer scales. In this paper, we report semiconducting, highly aligned, single-walled carbon nanotubes (SWCNTs) over 4" wafers with normalized birefringence and dichroism values 0.09 and 0.58, respectively. The real and imaginary parts of the refractive index of the SWCNT films are tuned by up to 5.9% and 14.3% in the infrared at 2200 nm and 1660 nm, respectively, using electrostatic doping. Our results suggest that aligned SWCNTs are among the most anisotropic and tunable optical materials known and opens new avenues for their application in integrated photonics and telecommunications.

physics.optics↗
arXiv2023

Wafer-scale growth of two-dimensional, phase-pure InSe

Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the first polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical deposition (MOCVD) over 2 inch diameter sapphire wafers. We achieve thickness-controlled, layer-by-layer epitaxial growth of InSe on c-plane sapphire via dynamic pulse control of Se/In flux ratio. The layer-by-layer growth allows thickness control over wafer scale with tunable optical properties comparable to bulk crystals. Finally, the gate-tunable electrical transport suggests that MOCVD-grown InSe could be a potential channel material for back-end-of-line integration in logic transistors with field-effect mobility comparable to single-crystalline flakes.

cond-mat.mtrl-sci↗
arXiv2023

Charge and Energy Transfer Dynamics of Hybridized Exciton-Polaritons in 2D Halide Perovskites

Excitons, bound electron-hole pairs, in Two-Dimensional Hybrid Organic Inorganic Perovskites (2D HOIPs) are capable of forming hybrid light-matter states known as exciton-polaritons (E-Ps) when the excitonic medium is confined in an optical cavity. In the case of 2D HOIPs, they can self-hybridize into E-Ps at specific thicknesses of the HOIP crystals that form a resonant optical cavity with the excitons. However, the fundamental properties of these self-hybridized E-Ps in 2D HOIPs, including their role in ultrafast energy and/or charge transfer at interfaces, remain unclear. Here, we demonstrate that > 0.5 um thick 2D HOIP crystals on Au substrates are capable of supporting multiple-orders of self-hybridized E-P modes. These E-Ps have high Q factors (> 100) and modulate the optical dispersion for the crystal to enhance sub-gap absorption and emission. Through varying excitation energy and ultrafast measurements, we also confirm energy transfer from higher energy upper E-Ps to lower energy, lower E-Ps. Finally, we also demonstrate that E-Ps are capable of charge transport and transfer at interfaces. Our findings provide new insights into charge and energy transfer in E-Ps opening new opportunities towards their manipulation for polaritonic devices.

cond-mat.mes-hall↗
arXiv2023

How Good Can 2D Excitonic Solar Cells Be?

Excitonic semiconductors have been a subject of research for photovoltaic applications for many decades. Among them, the organic polymers and small molecules based solar cells have now exceeded 19% power conversion efficiency (PCE). While organic photovoltaics (OPVs) are approaching maturity, the advent of strongly excitonic inorganic semiconductors such as two-dimensional transition metal dichalcogenides (TMDCs) has renewed interest in excitonic solar cells due to their high-optical constants, stable inorganic structure and sub-nm film thicknesses. While several reports have been published on TMDC based PVs, achieving power conversion efficiencies higher than 6% under one-sun AM1.5G illumination has remained challenging. Here, we perform a full optical and electronic analysis of design, structure and performance of monolayer TMDC based, single-junction excitonic PVs. Our computational model with optimized properties predicts a PCE of 9.22% in a superlattice device structure. Our analysis suggests that, while the PCE for 2D excitonic solar cells may be limited to < 10%, a specific power > 100 W g-1 may be achieved with our proposed designs, making them attractive in aerospace, distributed remote sensing, and wearable electronics.

physics.app-ph↗
arXiv2023

Accelerate & Actualize: Can 2D Materials Bridge the Gap Between Neuromorphic Hardware and the Human Brain?

Two-dimensional (2D) materials present an exciting opportunity for devices and systems beyond the von Neumann computing architecture paradigm due to their diversity of electronic structure, physical properties, and atomically-thin, van der Waals structures that enable ease of integration with conventional electronic materials and silicon-based hardware. All major classes of non-volatile memory (NVM) devices have been demonstrated using 2D materials, including their operation as synaptic devices for applications in neuromorphic computing hardware. Their atomically-thin structure, superior physical properties, i.e., mechanical strength, electrical and thermal conductivity, as well as gate-tunable electronic properties provide performance advantages and novel functionality in NVM devices and systems. However, device performance and variability as compared to incumbent materials and technology remain major concerns for real applications. Ultimately, the progress of 2D materials as a novel class of electronic materials and specifically their application in the area of neuromorphic electronics will depend on their scalable synthesis in thin-film form with desired crystal quality, defect density, and phase purity.

cond-mat.mes-hall↗