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arXiv · 2303.02530

Wafer-scale growth of two-dimensional, phase-pure InSe

Seunguk Song·Sungho Jeon·Mahfujur Rahaman·Jason Lynch·Pawan Kumar·Srikrishna Chakravarthi·Gwangwoo Kim·Xingyu Du·Eric Blanton·Kim Kisslinger·Michael Snure·Nicholas R. Glavin·Eric A. Stach·Roy H. Olsson·Deep Jariwala
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Abstract

Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the first polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical deposition (MOCVD) over 2 inch diameter sapphire wafers. We achieve thickness-controlled, layer-by-layer epitaxial growth of InSe on c-plane sapphire via dynamic pulse control of Se/In flux ratio. The layer-by-layer growth allows thickness control over wafer scale with tunable optical properties comparable to bulk crystals. Finally, the gate-tunable electrical transport suggests that MOCVD-grown InSe could be a potential channel material for back-end-of-line integration in logic transistors with field-effect mobility comparable to single-crystalline flakes.

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Seunguk Song, Sungho Jeon, Mahfujur Rahaman, Jason Lynch, Pawan Kumar, Srikrishna Chakravarthi, Gwangwoo Kim, Xingyu Du, Eric Blanton, Kim Kisslinger, Michael Snure, Nicholas R. Glavin, Eric A. Stach, Roy H. Olsson, Deep Jariwala. 2023-03-04. Wafer-scale growth of two-dimensional, phase-pure InSe. https://arxiv.org/abs/2303.02530

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