Energy-dependent trapping of backscattered helium during magnetron sputtering growth: A molecular dynamics study

Pascal Brault; Anne-Lise Thomann; Alejandro Borroto

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arXiv · 2610.13509

Energy-dependent trapping of backscattered helium during magnetron sputtering growth: A molecular dynamics study

Pascal Brault·Anne-Lise Thomann·Alejandro Borroto

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Abstract

Helium incorporation during magnetron sputtering can strongly affect thin film growth and lead to the formation of gas/solid nanocomposites and nanoporous structures. Here, molecular dynamics (MD) simulations are used to investigate the trapping mechanism of helium atoms (He) and the subsequent formation of He bubbles during the sputter deposition of aluminum (Al) and titanium (Ti) thin films. The simulations account for the kinetic energy distributions of sputtered metal atoms and backscattered gas species. Results indicate that He is efficiently incorporated into the growing films, leading to the formation of high-pressure, dense He bubbles, with a much higher He-to-metal atomic ratio in Ti ($\sim$ 60%) than in Al ($\sim$ 12%). More importantly, the simulations reveal a clear energy dependence of He trapping in Ti: background He atoms at thermal energies are essentially not incorporated, whereas efficient trapping starts at an incident energy of approximately 20 eV and increases up to a saturation regime near 100 eV. Simulated thermal desorption spectroscopy (TDS) further reveals distinct release mechanisms in the two investigated metals: He desorption from Al occurs at higher temperatures and is preceded by the removal of surface Al atoms, whereas He and Ti atom desorption starts continuously around 950 K, leading to a porous structure. Comparative simulations with argon (Ar) demonstrate negligible trapping even at comparable kinetic energy or momentum, showing that neither parameter alone accounts for the strong He incorporation observed in Ti. The above results are in very good agreement with what is reported in literature for low-kinetic energy He ion implantation in metal surfaces, suggesting similar insertion mechanisms. They clarify the atomistic conditions governing noble gas trapping during film growth and provide a basis for controlling He incorporation and porosity in films synthesized by magnetron sputtering.

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Pascal Brault, Anne-Lise Thomann, Alejandro Borroto. 2026-10-09. Energy-dependent trapping of backscattered helium during magnetron sputtering growth: A molecular dynamics study. https://arxiv.org/abs/2610.13509

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