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Pascal Brault

Publications and source records attributed to Pascal Brault.

14 recordsLinked to original sources

Reactive molecular dynamics approach to PFAS plasma oxidation in water

This work establishes a protocol to study via Molecular Dynamics simulation the degradation of Per-and Polyfluoroalkyl Substances (PFAS) in water by hydroxyl radical. To achieve this, molecular dynamics simulations are carried out, using ReaxFF reactive interaction potential. Simulations are carried out under a temperature ramp for determining all possible products. Using this methodology, reaction pathways of perfluorooctanoic acid (PFOA) and perfluorooctanesulfonic acid (PFOS) are identified.

physics.chem-ph

Probing trade-off between critical size and velocity in cold-spray: An atomistic simulation

The detailed mechanism of bonding in the cold spray process has remained elusive for both experimental and theoretical parties. Adiabatic shear instability and hydrodynamic plasticity models have been so far the most popular explanations. Here, using molecular dynamics simulation, we investigate their validity at the nanoscale. The present study has potential application for the fabrication of ultra-thin layers for the electronics industry. For this aim, we considered Ti nanoparticles of different diameters and Si substrates of different orientations. It is shown that very high spray velocities are required for a jet to be observed at the nanoscale. We propose a method for thermostating the substrate that enables utilizing high spray velocities. For the first time, we demonstrate an oscillatory behavior in both the normal and radial stress components within the substrate that can propagate into the particle. We have shown that neither the adiabatic shear instability model nor the hydrodynamic plasticity model can be ignored at the nanoscale. Besides, the formation of a low-resistance titanium silicide proper for electronic application is illustrated.

cond-mat.mtrl-sci

The role of sputtered atom and ion energy distribution in films deposited by Physical Vapor Deposition: A molecular dynamics approach

We present a comparative study of copper film growth with a constant energy neutral beam, thermal evaporation, dc magnetron sputtering, high-power impulse magnetron sputtering (HiP-IMS), and bipolar HiPIMS, through molecular dynamics simulations. Experimentally determined energy distribution functions were utilized to model the deposition processes. Our results indicate significant differences in the film quality, growth rate, and substrate erosion between the various physical vapor deposition techniques. Bipolar HiPIMS shows the potential for improved film structure under certain conditions, albeit with increased substrate erosion. Bipolar +180 V HiPIMS with 10% Cu + ions exhibited the best film properties in terms of crystallinity and atomic stress among the PVD processes investigated.

physics.comp-ph

Evaluating ion dynamics through Coulomb and Yukawa interaction potentials in one component strongly coupled plasmas

Atmospheric pressure helium plasmas are investigated through molecular dynamics simulations at room temperature (300 K) for various ionization fractions ($\chi_i = 10^{-1} - 10^{-5}$) in the strongly coupled regime (ion coupling parameter, $\Gamma_i \sim 1 - 10$) employing Coulomb and Yukawa interaction potentials. The role of electron screening in ion dynamics and energetics is examined through ion and gas temperatures, mean squared displacement of ions, ion coupling parameter, and radial distribution function of the system. It is found that electron screening in the Yukawa potential significantly limits the disorder-induced heating (DIH) mechanism for strongly ionized plasmas ($\chi_i$ $\ge 10^{-3}$). Whereas, ions show a prominent sub-diffusive behavior associated with the DIH during the non-equilibrium phase for the Coulomb potential. The DIH mechanism is explained using a model based upon the conservation of energy. However, for weakly ionized plasmas ($\chi_i \le 10^{-4}$), the maximum ion temperatures are almost similar for both potentials. Furthermore, electron screening affects the separation distance and arrangement of the ion-neutral pairs for all the values of $\chi_i$. In general, Yukawa potential results in a lower mean potential energy of the interacting particles, which is energetically favourable for the stability of the system.

physics.plasm-ph

Influence of Defects on Barrier Energy Formation for OOH* Intermediate in ORR on Tetragonal-ZrO 2 with Adsorbed-Hydroxyl

Accelerating the oxygen reduction reaction (ORR) is a main subject of electrocatalysis research.A critical step of ORR is the formation of the hydroperoxyl functional group (OOH*) intermediate. In this study, we investigate the influence of defects on facilitating the creation of OOH* in a zirconia-based cathode under hydroxyl group (-OH) adsorption. Simulations involve tetragonal pristine ZrO2 (111) surfaces with introduced oxygen vacancy (t-ZrO2-x) and nitrogen dopant (ZrO2-xNx). Density functional theory (DFT) is used to calculate the competitive -OH adsorption energies on pristine and defective surfaces. It reveals that oxynitride t-ZrO2-xNx and under-stoichiometric oxide t-ZrO2-x exhibit the lowest and highest susceptibility to -OH adsorption, respectively. Additionally, we have determined the Minimum Energy Pathway (MEP) for OOH* formation on t-ZrO2, t-ZrO2-x, and t-ZrO2-xNx with adsorbed-OH using the Nudged Elastic Band (NEB) approach with the COMB3 potential. Our results highlight the significant influence of defects on tuning the barrier energy of OOH* formation. The trend in the barrier energy formation of OOH* decreases in the order of t-ZrO2-x > pristine t-ZrO2 > t-ZrO2-xNx. We demonstrate that ZrO2-xNx is a promising candidate for accelerating ORR due to its lower barrier energy for OOH* creation. The findings from this study offer crucial insights for experimentalists aiming to develop optimal non-platinum-based cathode materials.

physics.comp-ph

Mechanism of O$_2$ influence on the decomposition process of the eco-friendly gas insulating medium C$_4$F$_7$N/CO$_2$

The C$_4$F$_7$N/CO$_2$/O$_2$ gas mixture is the most promising eco-friendly gas insulation medium available. However, there are few studies on the mechanism of the influence of the buffer gas O2 ratio and its role in the decomposition characteristics of C4F7N/CO2. In this paper, based on the ReaxFF reaction molecular dynamics method and density functional theory, a simulation of the thermal decomposition process of the C$_4$F$_7$N/CO$_2$ mixture under different O2 ratios was carried out at temperatures in the range 2000-3000 K. A constructed model of the C4F7N/CO2/O2 mixture reaction system was used that included the possible reaction paths, product distribution characteristics and their generation rates. The calculation results show that the thermal decomposition of C$_4$F$_7$N/CO$_2$/O$_2$ mainly generates species such as CF$_3$, CF$_2$, CF, F, C$_2$F$_5$, C$_2$F$_4$, C$_2$F$_2$, C$_3$F$_7$, C$_2$F$_2$N, C$_3$F$_4$N, CFN, CN, CO, O, and C. Among them, the two particles CF$_2$ and CN are the most abundant. The first decomposition time of C$_4$F$_7$N is advanced by the addition of O$_2$, while the amount of C$_4$F$_7$N decomposed and the generation of major decomposed particles decreases. The addition of 0%-4% of O$_2$ decreases the reaction rate of the main decomposition reaction in the reaction system. Quantum chemical calculations show that the dissociation process occurring from the combination of C$_4$F$_7$N with O atom is more likely to occur compared to the direct dissociation process of C$_4$F$_7$N molecules. The conclusions of this study provide a theoretical basis for the optimization of the application ratio of C$_4$F$_7$N/CO$_2$/O$_2$ and the diagnosis of its equipment operation and maintenance.

physics.comp-ph

Practical Classical Molecular Dynamics Simulations for Low-Temperature Plasma Processing: A review

Molecular Dynamics simulations are becoming a powerful tool for examining and predicting atomic and molecular processes in various environment. The present review shows how, in the fields of plasma physics, chemistry and interactions with materials and or liquids, Molecular Dynamics simulations are able to provide significant insights into various processes, among them: gas phase polymerization, deposition, plasma-catalysis, discharge breakdown, vibrational excitation.

physics.plasm-ph

COP: Control & Observability-aware Planning

In this research, we aim to answer the question: How to combine Closed-Loop State and Input Sensitivity-based with Observability-aware trajectory planning? These possibly opposite optimization objectives can be used to improve trajectory control tracking and, at the same time, estimation performance. Our proposed novel Control & Observability-aware Planning (COP) framework is the first that uses these possibly opposing objectives in a Single-Objective Optimization Problem (SOOP) based on the Augmented Weighted Tchebycheff method to perform the balancing of them and generation of B\'ezier curve-based trajectories. Statistically relevant simulations for a 3D quadrotor unmanned aerial vehicle (UAV) case study produce results that support our claims and show the negative correlation between both objectives. We were able to reduce the positional mean integral error norm as well as the estimation uncertainty with the same trajectory to comparable levels of the trajectories optimized with individual objectives.

cs.RO

On the role of ion potential energy in low energy HiPIMS deposition: An atomistic simulation

We study the effect of the so-called ion potential or non-kinetic energies of bombarding ions during ionized physical vapor deposition of Cu using molecular dynamics simulations. In particular we focus on low energy HiPIMS deposition, in which the potential energy of ions can be comparable to their kinetic energy. The ion potential, as a short-ranged repulsive force between the ions of the film-forming material and the surface atoms (substrate and later deposited film), is defined by the Ziegler-Biersack-Littmark potential. Analyzing the final structure indicates that, including the ion potential leads to a slightly lower interface mixing and fewer point defects (such as vacancies and interstitials), but resputtering and twinning have increased slightly. However, by including the ion potential the collision pattern changes. We also observed temporary formation of a ripple/pore with 5~nm height when the ion potential is included. The latter effect can explain the pores in HiPIMS deposited Cu thin films observed experimentally by atomic force microscopy.

cond-mat.mtrl-sci

Molecular Dynamics for Low Temperature Plasma-Surface Interaction Studies

The mechanisms of physical and chemical interactions of low temperature plasmas with surfaces can be fruitfully explored using molecular dynamics (MD) simulations. MD simulations follow the detailed motion of sets of interacting atoms through integration of atomic equations of motion, using inter-atomic potentials that can account for bond breaking and formation that result when energetic species from the plasma impact surfaces. This article summarizes the current status of the technique for various applications of low temperature plasmas to material processing technologies. The method is reviewed, and commonly used inter-atomic potentials are described. Special attention is paid to the use of MD in understanding various representative applications, including tetrahedral amorphous carbon film deposition from energetic carbon ions; the interactions of radical species with amorphous hydrogenated silicon films; silicon nano-particles in plasmas; and plasma etching.

physics.comp-ph

Anomalous diffusion mediated by atom deposition into a porous substrate

Constant flux atom deposition into a porous medium is shown to generate a dense overlayer and a diffusion profile. Scaling analysis shows that the overlayer acts as a dynamic control for atomic diffusion in the porous substrate. This is modeled by generalizing the porous diffusion equation with a time-dependent diffusion coefficient equivalent to a nonlinear rescaling of time

cond-mat.stat-mech

A continuous non-linear shadowing model of columnar growth

We propose the first continuous model with long range screening (shadowing) that described columnar growth in one space dimension, as observed in plasma sputter deposition. It is based on a new continuous partial derivative equation with non-linear diffusion and where the shadowing effects apply on all the different processes.

cond-mat.stat-mech

Molecular dynamics simulations of palladium cluster growth on flat and rough graphite surfaces

Parallel Molecular Dynamics simulations are conducted for describing growth on surfaces with different kind of roughness: a perfect ordered crystalline flat graphite surface, a disordered rough graphite surface and flat surface with an ordered localized defect. It is shown that disordered rough surfaces results in a first step to reduction of the sticking coefficient, increased cluster density, size reduction. Structure of the clusters shows the disappearance of the octahedral site characteristic of compact structure. Isolated defect induces cluster-cluster interactions that modify growth compared to perfect flat surface. Kinetic study of growth shows power law tαz evolution for low impinging atom kinetic energy. Increasing kinetic energy, on all kinds of surfaces, results in a slightly larger exponent z, but fitting by an exponential function is quite good too. Lattice expansion is favoured on rough surfaces but increasing incoming atom kinetic energy weakens this effect.

cond-mat.mtrl-sci

Shadowing effects for continuum and discrete deposition models

We study the dynamical evolution of the deposition interface using both discrete and continuous models for which shadowing effects are important. We explain why continuous and discrete models implying both only shadowing deposition do not give the same result and propose a continuous model which allow to recover the result of the discrete one exhibiting a strong columnar morphology.

math-ph