Micro-electromechanical photonic integrated memristors

Abstract

Programmable optical memristors embedded in photonic integrated circuits (PICs) are emerging as an important technology for high-speed optical storage and in-memory optical computing applications. These devices provide multi-level, non-volatile storage of optical phases that can be interrogated at the speed of light, enabling parallel data readout or energy-efficient multiply-accumulate operations in artificial neural networks. However, there remains several outstanding challenges with existing optical memristor technology including durability, material-induced optical losses, large-scale reconfigurability, or fabrication yield for realistic applications. Here we introduce an analog-programmable photonic memristor based on photonic integrated micro-electromechanical (MEMS) cantilevers produced in a CMOS foundry. The memristor consists of low-loss silicon nitride waveguides, requires no additional back-end materials integration, and is all electrically programmed with electrostatic-piezoelectric forces. We demonstrate up to 5-bit phase storage levels, 50 kbit/s programming speeds, strain-assisted non-volatility lifetimes >1 hour, >1 billion cycle endurance, and stress-tested millions of write-read cycles with pseudorandom bit sequences. We further extend the memory lifetime to several days with simple electronic refresh circuits in a portable battery-powered module, demonstrating a proof-of-concept optical random-access memory in static or dynamic configurations. Our MEMS-photonics technology represents an important step toward practical optical memristors.