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arXiv · 2101.00783

On-chip integrated waveguide amplifiers on Erbium-doped thin film lithium niobate on insulator

Junxia Zhou·Youting Liang·Zhaoxiang Liu·Wei Chu·Haisu Zhang·Difeng Yin·Zhiwei Fang·Rongbo Wu·Jianhao Zhang·Wei Chen·Zhe Wang·Yuan Zhou·Min Wang·Ya Cheng
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Abstract

We demonstrate on-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin film lithium niobate on insulator (TFLNOI) using the photolithography assisted chemo-mechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB/cm. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

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Junxia Zhou, Youting Liang, Zhaoxiang Liu, Wei Chu, Haisu Zhang, Difeng Yin, Zhiwei Fang, Rongbo Wu, Jianhao Zhang, Wei Chen, Zhe Wang, Yuan Zhou, Min Wang, Ya Cheng. 2021-01-04. On-chip integrated waveguide amplifiers on Erbium-doped thin film lithium niobate on insulator. https://arxiv.org/abs/2101.00783

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