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arXiv · 1701.04897

Grain Boundary Resistance in Copper Interconnects from an Atomistic Model to a Neural Network

Daniel Valencia·Evan Wilson·Zhengping Jiang·Gustavo A. Valencia-Zapata·Gerhard Klimeck·Michael Povolotskyi
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Abstract

Orientation effects on the resistivity of copper grain boundaries are studied systematically with two different atomistic tight binding methods. A methodology is developed to model the resistivity of grain boundaries using the Embedded Atom Model, tight binding methods and non-equilibrum Green's functions (NEGF). The methodology is validated against first principles calculations for small, ultra-thin body grain boundaries (<5nm) with 6.4% deviation in the resistivity. A statistical ensemble of 600 large, random structures with grains is studied. For structures with three grains, it is found that the distribution of resistivities is close to normal. Finally, a compact model for grain boundary resistivity is constructed based on a neural network.

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Daniel Valencia, Evan Wilson, Zhengping Jiang, Gustavo A. Valencia-Zapata, Gerhard Klimeck, Michael Povolotskyi. 2017-01-17. Grain Boundary Resistance in Copper Interconnects from an Atomistic Model to a Neural Network. https://doi.org/10.1103/physrevapplied.9.044005

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