arXiv subjects

Gerhard Klimeck

Publications and source records attributed to Gerhard Klimeck.

At least 19 recordsLinked to original sources

arXiv2023

Impact of Se concentration and distribution on topological transition in FeTe1-xSex crystals

A topological transition in high-temperature superconductors FeTe1-xSex, occurring at a critical range of Se concentration x, underlies their intrinsic topological superconductivity and emergence of Majorana states within vortices. Nonetheless, the influence of Se concentration and distribution on the electronic states in FeTe1-xSex remains unclear, particularly concerning their relationship with the presence or absence of Majorana states. In this study, we combine density functional theory (DFT) calculations, pz-dxz/yz-based and Wannier-based Hamiltonian analysis to systematically explore the electronic structures of diverse FeTe1-xSex compositions. Our investigation reveals a nonlinear variation of the spin-orbit coupling (SOC) gap between pz and dxz/yz bands in response to x, with the maximum gap occurring at x = 0.5. The pz-pz and dx2-y2-pz interactions are found to be critical for pd band inversion. Furthermore, we ascertain that the distribution of Se significantly modulates the SOC gap, thereby influencing the presence or absence of Majorana states within local vortices.

cond-mat.supr-con↗

arXiv2023

nanoHUB services for FAIR simulations and data: ResultsDB and Sim2Ls

nanoHUB is an open cyber platform for online simulation, data, and education that seeks to make scientific software and associated data widely available and useful. This paper describes recent developments in our simulation infrastructure to address modern data needs. nanoHUB's Sim2Ls (pronounced sim tools) make simulation, modeling, and data workflows discoverable and accessible to all users for cloud computing using standard APIs. In addition, published tools are findable (with digital object identifiers), reusable (via documented requirements and services), and reproducible via containerization. In addition, all Sim2L runs are automatically cached, and their results indexed into a global and queryable database (ResultsDB). We believe this infrastructure significantly lowers the barriers towards making simulation/data workflows and their data findable, accessible, interoperable, and reusable (FAIR). This frictionless access to simulations and data enables researchers, instructors, and students to focus on the application of these products to advance their fields.

cond-mat.mtrl-sci↗

arXiv2020

Doping profile engineered triple heterojunction TFETs with 12 nm body thickness

Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions and material interfaces. This work shows that the original THJ-TFET design with 12 nm body thickness has poor performance, because its sub-threshold swing is 50 mV/dec and the ON-current is only 6 $\mu A/\mu m$. To improve the performance, the doping profile of THJ-TFET is engineered to boost the resonant tunneling efficiency. The proposed THJ-TFET design shows a sub-threshold swing of 40 mV/dec over four orders of drain current and an ON-current of 325 uA/um with VGS = 0.3 V. Since THJ-TFETs have multiple quantum wells and material interfaces in the tunneling junction, quantum transport simulations in such devices are complicated. State-of-the-art mode-space quantum transport simulation, including the effect of thermalization and scattering, is employed in this work to optimize THJ-TFET design.

physics.app-ph↗

arXiv2020

The Ultimate DataFlow for Ultimate SuperComputers-on-a-Chip, for Scientific Computing, Geo Physics, Complex Mathematics, and Information Processing

This article starts from the assumption that near future 100BTransistor SuperComputers-on-a-Chip will include N big multi-core processors, 1000N small many-core processors, a TPU-like fixed-structure systolic array accelerator for the most frequently used Machine Learning algorithms needed in bandwidth-bound applications and a flexible-structure reprogrammable accelerator for less frequently used Machine Learning algorithms needed in latency-critical applications.

cs.DC↗

arXiv2020

Probabilistic Diagnostic Tests for Degradation Problems in Supervised Learning

Several studies point out different causes of performance degradation in supervised machine learning. Problems such as class imbalance, overlapping, small-disjuncts, noisy labels, and sparseness limit accuracy in classification algorithms. Even though a number of approaches either in the form of a methodology or an algorithm try to minimize performance degradation, they have been isolated efforts with limited scope. Most of these approaches focus on remediation of one among many problems, with experimental results coming from few datasets and classification algorithms, insufficient measures of prediction power, and lack of statistical validation for testing the real benefit of the proposed approach. This paper consists of two main parts: In the first part, a novel probabilistic diagnostic model based on identifying signs and symptoms of each problem is presented. Thereby, early and correct diagnosis of these problems is to be achieved in order to select not only the most convenient remediation treatment but also unbiased performance metrics. Secondly, the behavior and performance of several supervised algorithms are studied when training sets have such problems. Therefore, prediction of success for treatments can be estimated across classifiers.

cs.LG↗

arXiv2020

Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation

The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band atomistic NEGF approach, including scattering, is required to model the carrier transport accurately. However, such simulations for devices with realistic dimensions are computationally unfeasible. To mitigate this issue, we have employed the empirical tight-binding mode space approximation to simulate triple heterojunction TFETs with the body thickness up to 12 nm. The triple heterojunction TFET design is optimized using the model to achieve a sub-60mV/dec transfer characteristic under realistic scattering conditions.

physics.app-ph↗

arXiv2019

Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations

The non-equilibrium Green's function (NEGF) method with B\"uttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of Si/heavy-Si is considered, where heavy-Si differs from Si only in the mass value. With B\"uttiker probe scattering parameters tuned against MD in homogeneous Si, the NEGF-predicted thermal boundary resistance quantitatively agrees with MD for wide mass ratios. Artificial resistances that the unaltered Landauer approach yield at virtual interfaces in homogeneous systems are absent in the present NEGF approach. Spectral information result from NEGF in its natural representation without further transformations. The spectral results show that the scattering between different phonon modes plays a crucial role in thermal transport across interfaces. B\"uttiker probes provide an efficient and reliable way to include anharmonicity in phonon related NEGF. NEGF including the B\"uttiker probes can reliably predict phonon transport across interfaces and at finite temperatures.

physics.app-ph↗

arXiv2018

Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films

Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electrons drastically increases the electrical resistivity. In this work, we studied the electrical performance of Cu thin films on different materials. By comparing the thickness dependence of Cu films resistivity on MoS2 and SiO2, we demonstrated that two-dimensional MoS2 can be used to enhance the electrical performance of ultrathin Cu films due to a partial specular surface scattering. By fitting the experimental data with the theoretical Fuchs Sondheimer model, we obtained the specularity parameter at the Cu MoS2 interface in the temperature range 2K to 300K. Furthermore, first principle calculations based on the density functional theory indicates that there are more localized states at the Cu amorphous SiO2 interface than the Cu MoS2 interface which is responsible for the higher resistivity in the Cu SiO2 heterostructure due to more severe electron scattering. Our results suggest that Cu MoS2 hybrid is a promising candidate structure for the future generations of CMOS interconnects.

physics.app-ph↗

arXiv2018

Channel thickness optimization for ultra thin and 2D chemically doped TFETs

2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are achievable through small tunneling distances during the device operation. The ideal device is characterized by a minimized tunneling distance. However, devices with the thinnest possible body do not necessarily provide the best performance. For example, reducing the channel thickness increases the depletion width in the source which can be a significant part of the total tunneling distance. Hence, it is important to determine the optimum channel thickness for each channel material individually. In this work, we study the optimum channel thickness for three channel materials: WSe$_{2}$, Black Phosphorus (BP), and InAs using full-band self-consistent quantum transport simulations. To identify the ideal channel thickness for each material at a specific doping density, a new analytic model is proposed and benchmarked against the numerical simulations.

physics.comp-ph↗

arXiv2018

Explicit screening full band quantum transport model for semiconductor nanodevices

State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants. This paper exemplifies the large variability of different charge interpretation models when applied to ultrathin body transistor performance predictions. To solve this modeling challenge, an electron-only band structure model is extended to atomistic quantum transport. Performance predictions of MOSFETs and tunneling FETs confirm the generality of the new model and its independence of additional screening models.

physics.app-ph↗

arXiv2017

Switching Mechanism and the Scalability of vertical-TFETs

In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET is found to be different from previous predictions. As a consequence of this switching mechanism, the extension region, where the materials are not stacked over is found to be critical for turning off the v-TFET. This extension region makes the scaling of v-TFETs challenging. In addition, due to the presence of both positive and negative charges inside the channel, v-TFETs also exhibit negative capacitance. As a result, v-TFETs have good energy-delay products and are one of the promising candidates for low power applications.

cond-mat.mtrl-sci↗

arXiv2017

Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors

Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numerical cost but good MS basis is usually very hard to obtain for atomistic full-band models. In this work, a robust and parallel algorithm is developed to optimize the MS basis for atomistic nanowires. This enables tight binding non-equilibrium Green's function (NEGF) simulation of nanowire MOSFET with realistic cross section of $\rm 10nm\times10nm$ using a small computer cluster. This approach is applied to compare the performance of InGaAs and Si nanowire nMOSFETs with various channel lengths and cross sections. Simulation results with full-band accuracy indicate that InGaAs nanowire nMOSFETs have no drive current advantage over their Si counterparts for cross sections up to about $\rm 10nm\times10nm$.

cond-mat.mes-hall↗

arXiv2017

Sensitivity Challenge of Steep Transistors

Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of these devices in integrated circuits. From a sensitivity perspective, an ideal switch should have a high sensitivity to the gate voltage and lower sensitivity to the device design parameters like oxide and body thicknesses. In this work, conventional tunnel-FET (TFET) and negative capacitance FET are shown to suffer from high sensitivity to device design parameters using full-band atomistic quantum transport simulations and analytical analysis. Although Dielectric Engineered (DE-) TFETs based on 2D materials show smaller sensitivity compared with the conventional TFETs, they have leakage issue. To mitigate this challenge, a novel DE-TFET design has been proposed and studied.

cond-mat.mes-hall↗

arXiv2017

A Statistical Approach to Increase Classification Accuracy in Supervised Learning Algorithms

Probabilistic mixture models have been widely used for different machine learning and pattern recognition tasks such as clustering, dimensionality reduction, and classification. In this paper, we focus on trying to solve the most common challenges related to supervised learning algorithms by using mixture probability distribution functions. With this modeling strategy, we identify sub-labels and generate synthetic data in order to reach better classification accuracy. It means we focus on increasing the training data synthetically to increase the classification accuracy.

cs.LG↗

arXiv2017

Optimization of edge state velocity in the integer quantum Hall regime

Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point contact (QPCs) interferometers having a high edge state velocity is desirable. Here, we present a new simulation method for realistically modeling edge states near QPCs in the integer quantum Hall effect (IQHE) regime. We calculate the filling fraction in the center of the QPC and the velocity of the edge states, and predict structures with high edge state velocity. The 3D Schr\"odinger equation is split into 1D and 2D parts. Quasi-1D Schr\"odinger and Poisson equations are solved self-consistently in the IQHE regime to obtain the potential profile near the edges, and quantum transport is used to solve for the edge state wavefunctions. The velocity of edge states is found to be $\left< E \right> / B$, where $\left< E \right>$ is the expectation value of the electric field for the edge state. Anisotropically etched trench gated heterostructures with double sided delta doping have the highest edge state velocity among the structures considered.

cond-mat.mes-hall↗

arXiv2017

Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions

Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present a dramatic difference in the electrostatics of PN junctions in lower dimensional systems, as against the well understood three dimensional systems. Reducing the dimensionality increases the depletion width significantly. We propose a novel method to derive analytic equations in 2D and 1D that considers the impact of neutral regions. The analytical results show an excellent match with both the experimental measurements and numerical simulations. The square root dependence of the depletion width on the ratio of dielectric constant and doping in 3D changes to a linear and exponential dependence for 2D and 1D respectively. This higher sensitivity of 1D PN junctions to its control parameters can be used towards new sensors.

cond-mat.mes-hall↗

arXiv2017

All-electrical control of donor-bound electron spin qubits in silicon

We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by inducing an electric dipole between them and applying an alternating electric field generated by in-plane gates. These qubits can be coupled with exchange interaction controlled by top detuning gates. The qubit device can be fabricated deep in the silicon lattice with atomic precision by scanning tunneling probe technique. We have combined a large-scale full band atomistic tight-binding modeling approach with a time-dependent effective Hamiltonian description, providing a design with quantitative guidelines.

cond-mat.mes-hall↗

arXiv2017

Two-electron states of a group V donor in silicon from atomistic full configuration interaction

Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multi-electron exchange and correlation effects taking into account the full bandstructure of silicon and the atomic scale granularity of a nanoscale device. Excited $s$-like states of $A_1$-symmetry are found to strongly influence the charging energy of a negative donor centre. We apply the technique on sub-surface dopants subjected to gate electric fields, and show that bound triplet states appear in the spectrum as a result of decreased charging energy. The exchange energy, obtained for the two-electron states in various confinement regimes, may enable engineering electrical control of spins in donor-dot hybrid qubits.

cond-mat.mes-hall↗