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arXiv2013

Kondo-effect protected topological surface states on Sb(111)

Local density of states and quasiparticle interference phenomena of Co/Sb(111) were investigated by scanning tunneling spectroscopy. A sharp peak observed near the Fermi energy is interpreted as a fingerprint of the conventional Kondo resonance with the Kondo temperature of K. Moreover, by identifying the interference wavevectors, only the scattering channels relating to backscattering confinements are observed for surfaces with and without the Co deposition. It reveals that the Kondo effect fully screens the magnetic impurities and thereby suppresses the backscattering of the topological surface state.

cond-mat.mes-hall↗

arXiv2013

Anomalous Optical Phonon Splittings in Sliding Bilayer Graphene

We study the variations of electron-phonon coupling and their spectroscopic consequences in response to sliding of two layers in bilayer graphene using first-principles calculations and a model Hamiltonian. Our study shows that the long wave-length optical phonon modes change in a sensitive and unusual way depending on the symmetry as well as the parity of sliding atomic structures and that, accordingly, Raman- and infrared-active optical phonon modes behave differently upon the direction and size of the sliding. The renormalization of phonon modes by the interlayer electronic coupling is shown to be crucial to explain their anomalous behavior upon the sliding. Also, we show that the crystal symmetry change due to the sliding affects the polarized Stokes Raman-scattering intensity, which can be utilized to detect tiny misalignment of graphene layers using spectroscopic tools.

cond-mat.mes-hall↗

arXiv2013

Surface optical phonon scattering in N-polar GaN quantum well channels

N-polar GaN channel mobility is important for high frequency device applications. In this Letter, we report the theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2-DEG) in N-polar GaN quantum well channels with high-k dielectrics. The effect of SO phonons on 2-DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with high-k dielectrics is low and limits the total mobility. The SO scattering for SiNx dielectric GaN was found to be negligible due to its high SO phonon energy.

cond-mat.mes-hall↗

arXiv2013

Rate-dependent morphology of Li2O2 growth in Li-O2 batteries

Compact solid discharge products enable energy storage devices with high gravimetric and volumetric energy densities, but solid deposits on active surfaces can disturb charge transport and induce mechanical stress. In this Letter we develop a nanoscale continuum model for the growth of Li2O2 crystals in lithium-oxygen batteries with organic electrolytes, based on a theory of electrochemical non-equilibrium thermodynamics originally applied to Li-ion batteries. As in the case of lithium insertion in phase-separating LiFePO4 nanoparticles, the theory predicts a transition from complex to uniform morphologies of Li2O2 with increasing current. Discrete particle growth at low discharge rates becomes suppressed at high rates, resulting in a film of electronically insulating Li2O2 that limits cell performance. We predict that the transition between these surface growth modes occurs at current densities close to the exchange current density of the cathode reaction, consistent with experimental observations.

physics.chem-ph↗

arXiv2013

Negative differential resistance with graphene channels, interfacing distributed quantum dots in Field-Effect Transistors

Field effect transistors with channels made of graphene layer(s) were explored. The graphene layer(s) contacted a distributed array of well-separated semiconductor quantum dots (QDs). The dots were embedded in nano-structured hole-array; each filled hole was occupied by one dot. Differential optical and electrical conductance was observed. Since Negative Differential Resistance (NDR) is key to high-speed elements, such construction may open the door for new electro-photonic devices.

cond-mat.mes-hall↗

arXiv2013

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

We study sub-surface arsenic dopants in a hydrogen terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant related features that fall into two classes, which we call As1 and As2. When imaged in occupied states the As1 features appear as anisotropic protrusions superimposed on the silicon surface topography, and have maximum intensities lying along particular crystallographic orientations. In empty-state images the features all exhibit long-range circular protrusions. The images are consistent with buried dopants that are in the electrically neutral (D0) charge state when imaged in filled states, but become positively charged (D+) through electrostatic ionisation when imaged under empty state conditions, similar to previous observations of acceptors in GaAs. Density functional theory (DFT) calculations predict that As dopants in the third layer of the sample induce two states lying just below the conduction band edge, which hybridize with the surface structure creating features with the surface symmetry consistent with our STM images. The As2 features have the surprising characteristic of appearing as a protrusion in filled state images and an isotropic depression in empty state images, suggesting they are negatively charged at all biases. We discuss the possible origins of this feature.

cond-mat.mes-hall↗

arXiv2013

Graphene-enhanced, internal-magnetic-field-generated Rabi oscillations in metal-coated Si-SiO2 photoconductive detectors

We report our demonstration of Rabi oscillations in Si-SiO2-Al photoconductive devices with nanosecond laser pulses of a few nJ at room temperature without external magnetic fields. Zeeman splitting of spin quantum states of dopants in silicon is achieved with internal magnetic fields produced by the Al film under excitation of laser pulses. Rabi oscillation frequency is 15 MHz and 25 MHz when photocurrent direction is perpendicular and parallel, respectively, to the propagation direction of linearly-polarized, 532-nm, 7-ns laser pulses. Insertion of graphene buffer layer between Al and SiO2 provides a three-fold enhancement in Rabi oscillation amplitude. This simple-structured, low-cost device operated at room temperature should open a new avenue for future spin-based electronics and optoelectronics.

physics.optics↗

arXiv2013

Screening-induced negative differential conductance in the Franck-Condon blockade regime

Screening effects in nanoscale junctions with strong electron-phonon coupling open new physical scenarios. We propose an accurate many-body approach to deal with the simultaneous occurrence of the Franck-Condon blockade and the screening-induced enhancement of the polaron mobility. We derive a transparent analytic expression for the electrical current: transient and steady-state features are directly interpreted and explained. Moreover, the interplay between phononic and electronic excitations gives rise to a novel mechanism of negative differential conductance. Experimental setup to observe this phenomenon are discussed.

cond-mat.mes-hall↗

arXiv2013

The thermoballistic approach to charge carrier transport in semiconductors

A comprehensive survey is given of the thermoballistic approach to charge carrier transport in semiconductors. This semiclassical approach bridges the gap between the drift-diffusion and ballistic ("thermionic") models of carrier transport, whose validity is limited to the range of very small and very large values, respectively, of the carrier mean free path. The physical concept underlying the thermoballistic approach, while incorporating basic features of the drift-diffusion and ballistic descriptions, constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" defined by a random partitioning of the length of a semiconducting sample into ballistic transport intervals, which are linked by points of local thermodynamic equilibrium at which carriers are emitted or absorbed. By averaging the carrier currents in the ballistic intervals over all ballistic configurations, a position-dependent thermoballistic current is derived for arbitrary magnitude of the carrier mean free path. This current is the key element of the thermoballistic concept and forms the point of departure of the calculation of various transport quantities. The present article starts out with an account of the standard drift-diffusion and ballistic transport models, and of a prototype model which paves the way for the fully developed form of that concept. In the main body of the article, a coherent exposition of the thermoballistic approach is given within a general formulation that takes into account arbitrarily shaped, spin-split potential energy profiles and spin relaxation during the carrier motion across ballistic intervals. The calculational procedures devised for implementing the thermoballistic concept are described. Specific examples relevant to present-day semiconductor and spintronics research are considered.

cond-mat.mtrl-sci↗

arXiv2013

Electronic transport through molecular transistors in the polaronic regime

In this work, a new theoretical approach to study the non-equilibrium transport properties of nanoscale systems coupled to metallic electrodes with strong electron-phonon interactions is presented. The proposed approach consists in a resummation of the dominant Feynman diagrams from the exact preturbative expansion. This scheme is compared with methods that can be found in the literature. It shows a good agreement with these methods in the range where they are known to provide good results, for a wide range of parameters. Also, it is compared with path-integral Monte Carlo calculations giving a relatively good agreement for polaronic and non polaronic regimes. Some preliminary results for the current noise obtained with our method are presented.

cond-mat.mes-hall↗

arXiv2013

Transport spectroscopy of disordered graphene quantum dots etched into a single graphene flake

We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and addition energies increase with decreasing dot size, as expected, and display a strong correlation, suggesting the same physical origin for both, i.e. disorder-induced localization in presence of a small confinement gap. Gate capacitance measurements indicate that the dot charges are located in the narrow device region as intended. A dominant role of disorder is further substantiated by the gate dependence and the magnetic field behavior, allowing only approximate identification of the electron-hole crossover and spin filling sequences. Finally, we extract a g-factor consistent with g=2 within the error bars.

cond-mat.mes-hall↗

arXiv2013

Power dependence of electric dipole spin resonance

We develop a formalism of electric dipole spin resonance (EDSR) based on slanting magnetic field, where we especially investigate the microwave amplitude dependence. With increasing microwave amplitude, the Rabi frequency increases linearly for a spin confined in a harmonic potential. How- ever, when the spin is confined in the double-well potential, the Rabi frequency shows sub-linear dependence with increasing the microwave amplitude.

cond-mat.mes-hall↗

arXiv2013

Probing of electromagnetic fields on atomic scale by photoelectric phenomena in graphene

We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in 2D crystals and other atomic scale structures can be giantly enhanced by a proper combination of the spectral range and substrate material.

cond-mat.mes-hall↗

arXiv2013

Airtight metallic sealing at room temperature under small mechanical pressure

Here, we report a process of metallic sealing using small well-separated Ag nanorods; the process is at room temperature under a small mechanical pressure of 9.0 MPa, and also in ambient. The metallic seals have an air leak rate of 1.1 x 10-3 cm3atm/m2/day, and mechanical shear strength higher than 8.9 MPa. This leak rate meets the requirement of organic solar cells and organic light emitting diodes [1].

cond-mat.mes-hall↗

arXiv2013

Crossover regimes in lower dimensional structures

Modern growth and fabrication techniques can produce lower dimensional structures in the crossover regime. Such structures in the crossover regime can provide tunability of various properties. For example, a zero-dimensional (0-D) structure evolving towards a 2-D structure shows electronic structure which is neither 0-D-like, nor 2-D-like. Within the crossover regime the electronic density of states (DOS) at Fermi level (Ef) keeps on changing as the size of the system changes. DOS at Ef determines many properties of materials, such as electronic specific heat, spin susceptibility etc. Keeping the importance of DOS at Ef in mind, we determine their values and other details of electronic structure of lower dimensional structures of metals, in the 0-D to 1-D, 1-D to 2-D, 2-D to 3-D, 0-D to 2-D, 0-D to 3-Dand 1-D to 3-Dcrossover regimes, in a simple free electron model. We compare our results with analytical theory and experimental results, wherever available. We also present some results obtained by scanning tunneling spectroscopy measurements on Ag islands on Si(111) evolving from a 0-D to a 2-D structure. This simple model is quite useful in understanding lower dimensional structures in the crossover regimes.

cond-mat.mes-hall↗

arXiv2013

Hermitian and non-Hermitian thermal Hamiltonians

Thermal density matrices can be described by a pure quantum state within the thermofield formalism. Here we show how to construct a class of Hamiltonians realizing a thermofield state as their ground state. These Hamiltonians are frustration-free, and can be Hermitian or non-Hermitian, allowing one to use ground-state methods to understand the thermodynamic properties of the system. In particular this approach gives an explicit mapping of thermal phase transitions into quantum phase transitions. In the non-Hermitian case, the quantum phase transition is not accompanied by a change in the spectrum of the Hamiltonian, which remains gapped. We illustrate these ideas for the classical 2D Ising model.

cond-mat.stat-mech↗

arXiv2013

Limitations on the number of plasmons in nanoparticles

In this letter, we address the thermal processes occurring in plasmonic nanoparticles. We determine constrains imposed upon the plasmonic excitation in such nanoparticle by the resulting heat generation. Taking into account temperature dependence of the metal losses, we predict the existence of the critical number of plasmons in the nanoparticle. We also allow for the temperature dependencies of the thermal-conductivity coefficient of the environment and the Kapitza heat boundary resistance. We show that the latter can dominate the overall heat resistance in the system. Strength limitations caused by the action of electric forces are also considered. Obtained results provide instruments for the heat and strength management in the plasmonic engineering.

cond-mat.mes-hall↗

arXiv2013

Transport in Suspended Monolayer and Bilayer Graphene Under Strain: A New Platform for Material Studies

We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mobility and conductance responses to strain were observed for single layer and bilayer samples. These types of devices can be extended to other 2D membranes such as MoS2, providing transport, optical or other measurements with in situ strain.

cond-mat.mtrl-sci↗