Negative differential resistance with graphene channels, interfacing distributed quantum dots in Field-Effect Transistors

Samarth Trivedi; Haim Grebel

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arXiv · 1307.6790

Negative differential resistance with graphene channels, interfacing distributed quantum dots in Field-Effect Transistors

Samarth Trivedi·Haim Grebel

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Abstract

Field effect transistors with channels made of graphene layer(s) were explored. The graphene layer(s) contacted a distributed array of well-separated semiconductor quantum dots (QDs). The dots were embedded in nano-structured hole-array; each filled hole was occupied by one dot. Differential optical and electrical conductance was observed. Since Negative Differential Resistance (NDR) is key to high-speed elements, such construction may open the door for new electro-photonic devices.

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Samarth Trivedi, Haim Grebel. 2013-07-25. Negative differential resistance with graphene channels, interfacing distributed quantum dots in Field-Effect Transistors. https://arxiv.org/abs/1307.6790

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