arXiv subjects

Yuxing Zhou

Publications and source records attributed to Yuxing Zhou.

At least 19 recordsLinked to original sources

arXiv2026

Stable evaluation of derivatives for barycentric and continued fraction representations of rational functions

Fast algorithms for approximation by rational functions exist for both barycentric and Thiele continued fraction (TCF) representations. We present the first numerically stable methods for derivative evaluation in the barycentric representation, including an $O(n)$ algorithm for all derivatives. We also extend an earlier $O(n)$ algorithm for evaluation of the TCF first derivative to higher orders. Numerical experiments confirm the robustness and efficiency of the proposed methods.

math.NA↗

arXiv2025

Greedy Thiele continued-fraction approximation on continuum domains in the complex plane

We describe an adaptive greedy algorithm for Thiele continued-fraction (TCF) approximation of a function defined on a continuum domain in the complex plane. The algorithm iteratively selects interpolation nodes from an adaptively refined set of sample points on the domain boundary. We also present new algorithms for evaluating Thiele continued fractions and their accessory weights using only a single floating-point division. Numerical experiments comparing the greedy TCF method with the AAA algorithm on several challenging functions defined on the interval $[-1,1]$ and on the unit circle show that continuum TCF is consistently faster than AAA, by factors ranging from 8 to 40.

math.NA↗

arXiv2025

Medium-range structural order in amorphous arsenic

Medium-range order (MRO) is a key structural feature of amorphous materials, but its origin and nature remain elusive. Here, we reveal the MRO in amorphous arsenic (a-As) using advanced atomistic simulations, based on machine-learned potentials derived using automated workflows. Our simulations accurately reproduce the experimental structure factor of a-As, especially the first sharp diffraction peak (FSDP), which is a signature of MRO. We compare and contrast the structure of a-As with that of its lighter homologue, red amorphous phosphorus (a-P), identifying the dihedral-angle distribution as a key factor differentiating the MRO in both. The pressure-dependent structural behaviors of a-As and a-P differ as well, which we link to the interplay of ring topology and structural entropy. We finally show that the origin of the FSDP is closely correlated with the size and spatial distribution of voids in the amorphous networks. Our work provides fundamental insights into MRO in an amorphous elemental system, and more widely it illustrates the usefulness of automation for machine-learning-driven atomistic simulations.

cond-mat.mtrl-sci↗

arXiv2025

InfoDet: A Dataset for Infographic Element Detection

Given the central role of charts in scientific, business, and communication contexts, enhancing the chart understanding capabilities of vision-language models (VLMs) has become increasingly critical. A key limitation of existing VLMs lies in their inaccurate visual grounding of infographic elements, including charts and human-recognizable objects (HROs) such as icons and images. However, chart understanding often requires identifying relevant elements and reasoning over them. To address this limitation, we introduce InfoDet, a dataset designed to support the development of accurate object detection models for charts and HROs in infographics. It contains 11,264 real and 90,000 synthetic infographics, with over 14 million bounding box annotations. These annotations are created by combining the model-in-the-loop and programmatic methods. We demonstrate the usefulness of InfoDet through three applications: 1) constructing a Thinking-with-Boxes scheme to boost the chart understanding performance of VLMs, 2) comparing existing object detection models, and 3) applying the developed detection model to document layout and UI element detection.

cs.CV↗

arXiv2025

Full-cycle device-scale simulations of memory materials with a tailored atomic-cluster-expansion potential

Computer simulations have long been key to understanding and designing phase-change materials (PCMs) for memory technologies. Machine learning is now increasingly being used to accelerate the modelling of PCMs, and yet it remains challenging to simultaneously reach the length and time scales required to simulate the operation of real-world PCM devices. Here, we show how ultra-fast machine-learned interatomic potentials, based on the atomic cluster expansion (ACE) framework, enable simulations of PCMs reflecting applications in devices with excellent scalability on high-performance computing platforms. We report full-cycle simulations -- including the time-consuming crystallisation process (from digital "zeroes" to "ones") -- thus representing the entire programming cycle for cross-point memory devices. We also showcase a simulation of full-cycle operations, relevant to neuromorphic computing, in a mushroom-type device geometry. Our work provides a springboard for the atomistic modelling of PCM-based memory and neuromorphic computing devices -- and, more widely, it illustrates the power of highly efficient ACE ML models for materials science and engineering.

cond-mat.mtrl-sci↗

arXiv2024

An automated framework for exploring and learning potential-energy surfaces

Machine learning has become ubiquitous in materials modelling and now routinely enables large-scale atomistic simulations with quantum-mechanical accuracy. However, developing machine-learned interatomic potentials requires high-quality training data, and the manual generation and curation of such data can be a major bottleneck. Here, we introduce an automated framework for the exploration and fitting of potential-energy surfaces, implemented in an openly available software package that we call autoplex (`automatic potential-landscape explorer'). We discuss design choices, particularly the interoperability with existing software architectures, and the ability for the end user to easily use the computational workflows provided. We show wide-ranging capability demonstrations: for the titanium-oxygen system, SiO2, crystalline and liquid water, as well as phase-change memory materials. More generally, our study illustrates how automation can speed up atomistic machine learning -- with a long-term vision of making it a genuine mainstream tool in physics, chemistry, and materials science.

physics.comp-ph↗

arXiv2024

The pathway to chirality in elemental tellurium

Chiral crystals, like chiral molecules, cannot be superimposed onto their mirror images -- a fundamental property that has been linked to interesting physical behavior and exploited in functional devices. Among the simplest inorganic systems with crystallographic chirality, elemental tellurium adopts crystal structures with right- or left-handed chains. However, understanding the formation mechanisms of those structures has been difficult due to the rapid crystallization of Te, which reaches the spatial and temporal resolution limits of even the most advanced experiments. Here, we report ultra-large-scale, quantum-mechanically accurate simulations that reveal mechanisms of crystallization and the origin of crystallographic chirality in solid Te. We identify a characteristic, disordered cube-like structural motif -- a transient bonding environment with only nanosecond lifetime -- that enables both the rapid crystallization of Te and mediates chirality transfer. Based on the resulting microscopic understanding, we are able to explain the switching behavior of Te-based electrical devices.

cond-mat.mtrl-sci↗

arXiv2024

Hyperparameter Optimization for Atomic Cluster Expansion Potentials

Machine-learning-based interatomic potentials enable accurate materials simulations on extended time- and lengthscales. ML potentials based on the Atomic Cluster Expansion (ACE) framework have recently shown promising performance for this purpose. Here, we describe a largely automated computational approach to optimizing hyperparameters for ACE potential models. We extend our openly available Python package, XPOT, to include an interface for ACE fitting, and discuss the optimization of the functional form and complexity of these models based on systematic sweeps across relevant hyperparameters. We showcase the usefulness of the approach for two example systems: the covalent network of silicon and the phase-change material Sb$_{2}$Te$_{3}$. More generally, our work emphasizes the importance of hyperparameter selection in the development of advanced ML potential models.

physics.comp-ph↗

arXiv2024

Homopolar Chemical Bonds Induce In-Plane Anisotropy in Layered Semiconductors

Main-group layered binary semiconductors, in particular, the III-VI alloys in the binary Ga-Te system are attracting increasing interest for a range of practical applications. The III-VI semiconductor, monoclinic gallium monotelluride (m-GaTe), has been recently used in high-sensitivity photodetectors/phototransistors and electronic memory applications due to its anisotropic properties yielding superior optical and electrical performance. Despite these applications, the origin of such anisotropy, namely the complex structural and bonding environments in GaTe nanostructures remain to be fully understood. In the present work, we report a comprehensive atomic-scale characterization of m-GaTe by state-of-the-art element-resolved atomic-scale microscopy experiments, enabling a direct measure of the in-plane anisotropy at the sub-Angstrom level. We show that these experimental images compare well with the results of first-principles modeling. Quantum-chemical bonding analyses provide a detailed picture of the atomic neighbor interactions within the layers, revealing that vertical Ga-Ga homopolar bonds get stronger when they are distorted and rotated, inducing the strong in-plane anisotropy. Beyond GaTe, using a systematic screening over the Materials Project database, we identify four additional low-symmetric layered crystals with similar distorted tetrahedral patterns, namely, GeP, GeAs, SiP, and SiAs. We thereby confirm the homopolar-bond-induced anisotropy is a more generic feature in these layered van-der-Waals materials.

cond-mat.mtrl-sci↗

arXiv2023

Cluster-Aware Grid Layout

Grid visualizations are widely used in many applications to visually explain a set of data and their proximity relationships. However, existing layout methods face difficulties when dealing with the inherent cluster structures within the data. To address this issue, we propose a cluster-aware grid layout method that aims to better preserve cluster structures by simultaneously considering proximity, compactness, and convexity in the optimization process. Our method utilizes a hybrid optimization strategy that consists of two phases. The global phase aims to balance proximity and compactness within each cluster, while the local phase ensures the convexity of cluster shapes. We evaluate the proposed grid layout method through a series of quantitative experiments and two use cases, demonstrating its effectiveness in preserving cluster structures and facilitating analysis tasks.

cs.HC↗

arXiv2022

Structure and Bonding in Amorphous Red Phosphorus

Amorphous red phosphorus (a-P) is one of the remaining puzzling cases in the structural chemistry of the elements. Here, we elucidate the structure, stability, and chemical bond-ing in a-P from first principles, combining machine-learning and density-functional theo-ry (DFT) methods. We show that a-P structures exist with a range of energies slightly higher than those of phosphorus nanorods, to which they are closely related, and that the stability of a-P is linked to the degree of structural relaxation and medium-range order. We thus complete the stability range of phosphorus allotropes [Angew. Chem. Int. Ed. 2014, 53, 11629] by now including the previously poorly understood amorphous phase, and we quantify the covalent and van der Waals interactions in all main phases of phos-phorus. We also study the electronic densities of states, including those of hydrogenated a-P. Beyond the present study, our structural models are expected to enable wider-ranging first-principles investigations - for example, of a-P-based battery materials.

cond-mat.mtrl-sci↗

arXiv2022

Unlocking device-scale atomistic modelling of phase-change memory materials

Quantum-accurate computer simulations play a central role in understanding phase-change materials (PCMs) for advanced memory technologies. However, direct quantum-mechanical simulations are necessarily limited to simplified models, containing no more than a few hundred or a thousand atoms. Machine learning (ML) based potential models that are "trained" on quantum-mechanical data are an emerging alternative approach, currently evolving from highly specialised to more widely applied simulation tools. Here we show that a universal, compositionally flexible ML model can describe a wide range of flagship Ge-Sb-Te PCMs under real device conditions, including non-isothermal heating and chemical disorder which are relevant for memory applications. The speed of the ML model enables atomistic simulations of multiple thermal cycles and delicate operations for neuro-inspired computing, namely, cumulative SET and iterative RESET. A device-scale capability demonstration (40 x 20 x 20 nm3) shows that the new ML potential can directly describe technologically relevant processes in PCM-based memory products. In a wider context, our work demonstrates how ML-driven materials simulations are now entering a stage where they can guide architecture design for high-performance electronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Cluster Fragments in Amorphous Phosphorus and their Evolution under Pressure

Amorphous phosphorus (a-P) has long attracted interest because of its complex atomic structure, and more recently as an anode material for batteries. However, accurately describing and understanding a-P at the atomistic level remains a challenge. Here we show that large-scale molecular-dynamics simulations, enabled by a machine learning (ML)-based interatomic potential for phosphorus, can give new insights into the atomic structure of a-P and how this structure changes under pressure. The structural model so obtained contains abundant five-membered rings, as well as more complex seven- and eight-atom clusters. Changes in the simulated first sharp diffraction peak during compression and decompression indicate a hysteresis in the recovery of medium-range order. An analysis of cluster fragments, large rings, and voids suggests that moderate pressure (up to about 5 GPa) does not break the connectivity of clusters, but higher pressure does. Our work provides a starting point for further computational studies of the structure and properties of a-P, and more generally it exemplifies how ML-driven modeling can accelerate the understanding of disordered functional materials.

cond-mat.mtrl-sci↗

arXiv2021

Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure

Compounds with the A15 structure have attracted extensive attention due to their superconductivity and nontrivial topological band structure. We have successfully grown Nb$_3$Sb single crystals with a A15 structure and systematically measured the longitudinal resistivity, Hall resistivity and quantum oscillations in magnetization. Similar to other topological trivial/nontrivial semimetals, Nb$_3$Sb, exhibits large magnetoresistance (MR) at low temperatures (717$\%$, 2 K and 9 T), unsaturating quadratic field dependence of MR and up-turn behavior in $\rho_{xx}$(\emph{T}) curves under magnetic field, which is considered to result from a perfect hole-electron compensation, as evidenced by the Hall resistivity measurements. The nonzero Berry phase obtained from the de-Hass van Alphen (dHvA) oscillations demonstrates that Nb$_3$Sb is topologically nontrivial. These results indicate that Nb$_{3}$Sb superconductor is also a semimetal with large MR and nontrivial Berry phase, indicating that Nb$_{3}$Sb may be another platform to search for Majorana zero-energy mode.

cond-mat.supr-con↗

arXiv2021

Extremely large magnetoresistance in the "ordinary" metal ReO3

The extremely large magnetoresistance (XMR) observed in many topologically nontrivial and trivial semimetals has attracted much attention in relation to its underlying physical mechanism. In this paper, by combining the band structure and Fermi surface (FS) calculations with the Hall resistivity and de Haas-Van Alphen (dHvA) oscillation measurements, we studied the anisotropy of magnetoresistance (MR) of ReO$_3$ with a simple cubic structure, an "ordinary" nonmagnetic metal considered previously. We found that ReO$_3$ exhibits almost all the characteristics of XMR semimetals: the nearly quadratic field dependence of MR, a field-induced upturn in resistivity followed by a plateau at low temperatures, high mobilities of charge carriers. It was found that for magnetic field \emph{H} applied along the \emph{c} axis, the MR exhibits an unsaturated \emph{H}$^{1.75}$ dependence, which was argued to arise from the complete carrier compensation supported by the Hall resistivity measurements. For \emph{H} applied along the direction of 15$^\circ$ relative to the \emph{c} axis, an unsaturated \emph{H}$^{1.90}$ dependence of MR up to 9.43~$\times$~$10^3$$\%$ at 10~K and 9~T was observed, which was explained by the existence of electron open orbits extending along the $k_{x}$ direction. Two mechanisms responsible for XMR observed usually in the semimetals occur also in the simple metal ReO$_3$ due to its peculiar FS (two closed electron pockets and one open electron pocket), once again indicating that the details of FS topology are a key factor for the observed XMR in materials.

cond-mat.str-el↗

arXiv2021

Bonding nature and optical contrast of $TiTe_2$/$Sb_2Te_3$ phase-change heterostructure

Chalcogenide phase-change materials (PCMs) are regarded as the leading candidate for storage-class non-volatile memory and neuro-inspired computing. Recently, using the $TiTe_2$/$Sb_2Te_3$ material combination, a new framework - phase-change heterostructure (PCH), has been developed and proved to effectively suppress the noise and drift in electrical resistance upon memory programming, largely reducing the inter-device variability. However, the atomic-scale structural and chemical nature of PCH remains to be fully understood. In this work, we carry out thorough ab initio simulations to assess the bonding characteristics of the PCH. We show that the $TiTe_2$ crystalline nanolayers do not chemically interact with the surrounding $Sb_2Te_3$, and are stabilized by strong covalent and electrostatic Ti-Te interactions, which create a prohibitively high barrier for atomic migrations along the pulsing direction. We also find significant contrast in computed dielectric functions in the PCH, suggesting possible optical applications of this class of devices. With the more confined space and therefore constrained phase transition compared to traditional PCM devices, the recently introduced class of PCH-based devices may lead to improvements in phase-change photonic and optoelectronic applications with much lower stochasticity during programming.

cond-mat.mtrl-sci↗

arXiv2021

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

Chalcogenide phase-change materials (PCMs) show a significant contrast in optical reflectivity and electrical resistivity upon crystallization from the amorphous phase and are leading candidates for non-volatile photonic and electronic applications. In addition to the flagship Ge2Sb2Te5 phase-change alloy, doped Sb2Te alloys, in particular AgInSbTe used in rewritable optical discs, have been widely investigated for decades, and nevertheless the theoretical insights on the optical properties of this important family of PCMs are scarce. Here, we carry out thorough ab initio simulations to gain an atomistic understanding of the optical properties of Sb2Te and AgInSbTe. We show that the large optical contrast between the amorphous and crystalline phase stems from the change in bond type in the parent compound Sb2Te. Ag and In impurities serve mostly the purpose of stabilization of the amorphous phase, and have marginal impact on the large variation in the dielectric function upon the phase transitions.

cond-mat.mtrl-sci↗

arXiv2020

Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$

We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity $\rho_{xx}(T,H)$, Hall resistivity $\rho_{xy}(T,H)$, and magnetic susceptibility as a function of temperature and various magnetic fields for VAs$_2$ with a monoclinic crystal structure. The band structure calculations show that VAs$_2$ is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in $\rho_{xx}(T)$ measured at $H$ = 0 demonstrates that an additional magnetic impurity (V$^{4+}$, $S$ = 1/2) occurs in VAs$_2$ single crystals, evidenced by both the fitting of $\rho_{xx}(T)$ data and the susceptibility measurements. It was found that a large positive magnetoresistance (MR) reaching 649\% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of $\rho_{xx}(T)$ emerge also in VAs$_2$, although MR is not so large due to the existence of additional scattering compared with other topological nontrival/trival semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V ($3d^3 4s^2$) element as a platform for studying the influence of magnetic impurities to the topological properties.

cond-mat.str-el↗