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arXiv · 2012.11997

Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$

Shuijin Chen·Zhefeng Lou·Yuxing Zhou·Qin Chen·Binjie Xu·Jianhua Du·Jinhu Yang·Haangdong Wang·Minghu Fang
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Abstract

We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity $\rho_{xx}(T,H)$, Hall resistivity $\rho_{xy}(T,H)$, and magnetic susceptibility as a function of temperature and various magnetic fields for VAs$_2$ with a monoclinic crystal structure. The band structure calculations show that VAs$_2$ is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in $\rho_{xx}(T)$ measured at $H$ = 0 demonstrates that an additional magnetic impurity (V$^{4+}$, $S$ = 1/2) occurs in VAs$_2$ single crystals, evidenced by both the fitting of $\rho_{xx}(T)$ data and the susceptibility measurements. It was found that a large positive magnetoresistance (MR) reaching 649\% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of $\rho_{xx}(T)$ emerge also in VAs$_2$, although MR is not so large due to the existence of additional scattering compared with other topological nontrival/trival semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V ($3d^3 4s^2$) element as a platform for studying the influence of magnetic impurities to the topological properties.

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Shuijin Chen, Zhefeng Lou, Yuxing Zhou, Qin Chen, Binjie Xu, Jianhua Du, Jinhu Yang, Haangdong Wang, Minghu Fang. 2020-12-22. Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$. https://doi.org/10.1088/0256-307x/38/1/017202

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