arXiv subjects

Yuh-Renn Wu

Publications and source records attributed to Yuh-Renn Wu.

14 recordsLinked to original sources

arXiv2026

Efficient Analysis of Carrier Transport and TM-TE Emission in AlGaN UVC LEDs via Multi-band Localization Landscape Theory

AlGaN-based UVC LEDs (220-250 nm) suffer from poor hole confinement and strain-induced |Z>-band dominance at high Al content (>60%), leading to increased TM emission and reduced external quantum efficiency (EQE). While conventional k.p models combined with Schrodinger, Poisson, and drift-diffusion solvers are widely used to study optical transitions, they are computationally expensive. In this work, we apply the multiband Localization Landscape (LL) model, including the effect of strain, as an alternative that replaces the eigenvalue problem to efficiently capture quantum effects and carrier localization. Using the 3D multi-band LL model with the Wigner-Weyl formalism, we reproduce emission and absorption spectra trends similar to the results in 3D k.p calculations, but with significantly reduced simulation time. The polarization ratio also agrees well with published experimental results across a wide spectral range. Furthermore, we analyze electrical characteristics such as band structure, polarization switching, and carrier confinement under alloy fluctuations and strain. This multi-band LL-based approach provides a fast and reliable solution for understanding and optimizing UVC LED performance.

physics.app-ph↗

arXiv2025

Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high-$\kappa$ oxides

The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems. At low electric fields, phonon absorption becomes negligible, and mobility is governed by competition between remote Coulomb scattering~(RCS) at low inversion charge density and surface roughness scattering~(SRS) at high density, leading to a mobility peak. High-$\kappa$ dielectrics such as $\mathrm{HfO_2}$ introduce remote phonon scattering~(RPS), which suppresses mobility. Under high electric fields, phonon emission dominates at 4~K, limiting velocity enhancement and resulting in limited current improvement

cond-mat.mes-hall↗

arXiv2025

The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage ($V < \hbar\omega/e = 2.0 \, \text{V}$) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.

physics.app-ph↗

arXiv2023

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

Janus transition metal dichalcogenides (JTMDs) have attracted much attention because of their outstanding electronic and optical properties. The additional out-of-plane dipole in JTMDs can form n- and p-like Ohmic contacts, and this may be used in device applications such as pin diodes and photovoltaic cells. In this study, we exploit this property to design n- and p-type metal-oxide-semiconductor field effect transistors (MOSFETs). First, we use density-functional theory calculations to study the inherent dipole field strength in the trilayer JTMD MoSSe. The intrinsic dipole of MoSSe causes band bending at both the metal/MoSSe and MoSSe/metal interfaces, resulting in electron and hole accumulation to form n- and p-type Ohmic contact regions. We incorporate this property into a 2D finite-element-based Poisson-drift-diffusion solver to perform simulations, on the basis of which we design complementary MOSFETs. Our results demonstrate that JTMDs can be used to make n- and p-MOSFETs in the same layer without the need for any extra doping.

cond-mat.mtrl-sci↗

arXiv2023

Analysis of two-terminal perovskite/silicon tandem solar cells with differing texture structure, perovskite carrier lifetime and tunneling junction quality

Presented here is the optimization of a planar two-terminal perovskite/silicon tandem solar cell with a texture structure. The developed simulation model is fitted to published experimental results, and the importance of current matching in the two-terminal structure is discussed. With the texture structure optimized and considering current matching, the optimal texture structure improves $J_{sc}$ from 17.9~mA/cm$^2$ to 20.87~mA/cm$^2$ compared to the planar structure, as well as improving the power conversion efficiency from 25.8% to 35.9%. Furthermore, if the quality of the perovskite thin film and tunneling junction efficiency with a smaller voltage penalty can be improved, then the efficiency can be further improved to 38.13%. This indicates that this tandem solar cell still has much room for improvement.

physics.app-ph↗

arXiv2023

Numerical analysis and optimization of a hybrid layer structure for triplet-triplet fusion mechanism in organic light-emitting diodes

In this study, we develop a steady state and time-dependent exciton diffusion model including singlet and triplet excitons coupled with a modified Poisson and drift-diffusion solver to explain the mechanism of hyper triplet-triplet fusion (TTF) organic light-emitting diodes (OLEDs). Using this modified simulator, we demonstrate various characteristics of OLEDs, including the J-V curve, internal quantum efficiency, transient spectrum, and electric profile. This solver can also be used to explain the mechanism of hyper-TTF-OLEDs and analyze the loss from different exciton mechanisms. Furthermore, we perform additional optimization of hyper-TTF-OLEDs that increases the internal quantum efficiency by approximately 33% (from 29% to 40%).

cond-mat.mtrl-sci↗

arXiv2023

Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Resistive memory based on 2D WS2, MoS2, and h-BN materials has been studied, including experiments and simulations. The influences with different active layer thicknesses have been discussed, including experiments and simulations. The thickness with the best On/Off ratio is also found for the 2D RRAM. This work reveals fundamental differences between a 2D RRAM and a conventional oxide RRAM. Furthermore, from the physical parameters extracted with the KMC model, the 2D materials have a lower diffusion activation energy from the vertical direction, where a smaller bias voltage and a shorter switching time can be achieved. It was also found the diffusion activation energy from the CVD-grown sample is much lower than the mechanical exfoliated sample. The result shows MoS2 has the fastest switching speed among three 2D materials.

cond-mat.mtrl-sci↗

arXiv2021

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shape defects and Random Alloy Fluctuation in Quantum Wells

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage $V_\text{for}$ is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in QWs has proven to be an important factor reducing $V_\text{for}$. However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-defects have been proposed as another key factor in reducing $V_\text{for}$ to allow laterally injection into multiple quantum wells (MQWs), thus bypassing the multiple energy barriers incurred by vertical transport. In this paper, to model carrier transport in the whole LED, we consider both random-alloy and V-defect effects. A fully two-dimensional drift-diffusion charge-control solver is used to model both effects. The results indicate that the turn-on voltages for blue and green LEDs are both affected by random alloy fluctuations and V-defect density. For green LEDs, $V_\text{for}$ decreases more due to V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection. Finally, we discuss how V-defect density and size affects the results.

physics.app-ph↗

arXiv2021

Influences of Dielectric Constant and Scan Rate to Hysteresis Effect in Perovskite Solar Cell: Simulation and Experimental Analyses

In this work, perovskite solar cells (PSCs) with different transport layers were fabricated to understand the hysteresis phenomenon under a series of scan rates. The experimental results show that the hysteresis phenomenon would be affected by the dielectric constant of transport layers and scan rate significantly. To explain this, a modified Poisson and drift-diffusion solver coupled with a fully time-dependent ion migration model is developed to analyze how the ion migration affects the performance and hysteresis of PSCs. The simulation model was optimized for carrier transportation of organic materials, which can simulate the organic transport layer correctly without using heavy doping in simulating the organic transport layer. The modeling results show that the most crucial factor in the hysteresis behavior is the built-in electric field of the perovskite. The non-linear hysteresis curves are demonstrated under different scan rates, and the mechanism of the hysteresis behavior is explained. The findings reveal why the change in hysteresis degree with scan rate is Gaussian shaped rather than monotonic. Additionally, other factors contributing to the degree of hysteresis are determined to be the degree of degradation in the perovskite material, the quality of the perovskite crystal, and the materials of the transport layer, which corresponds to the total ion density, carrier lifetime of perovskite, and the dielectric constant of the transport layer, respectively. Finally, it was found that the dielectric constant of the transport layer is a key factor affecting hysteresis in perovskite solar cells; a lower dielectric constant corresponds to a higher electric field of the transport layer. Hence, if the electric field of the perovskite material is small, the degree of hysteresis is small and vice versa.

cond-mat.mtrl-sci↗

arXiv2021

Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells

For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and current spreading. The diffusion length mainly impacts the overall LED efficiency through sidewall nonradiative recombination, especially for $\mu$LEDs. In this paper, we study the carrier lateral diffusion length for nitride-based green, blue, and ultraviolet C (UVC) QWs in three dimensions. We solve the Poisson and drift-diffusion equations in the framework of localization landscape theory. The full three-dimensional model includes the effects of random alloy composition fluctuations and electric fields in the QWs. The dependence of the minority carrier diffusion length on the majority carrier density is studied with a full three-dimensional model. The results show that the diffusion length is limited by the potential fluctuations and the recombination rate, the latter being controlled by the polarization-induced electric field in the QWs and by the screening of the internal electric fields by carriers.

physics.app-ph↗

arXiv2019

Hybrid classical-quantum linear solver using Noisy Intermediate-Scale Quantum machines

We propose a realistic hybrid classical-quantum linear solver to solve systems of linear equations of a specific type, and demonstrate its feasibility using Qiskit on IBM Q systems. This algorithm makes use of quantum random walk that runs in $\mathcal{O}(N\log(N))$ time on a quantum circuit made of $\mathcal{O}(\log(N))$ qubits. The input and output are classical data, and so can be easily accessed. It is robust against noise, and ready for implementation in applications such as machine learning.

quant-ph↗

arXiv2017

Localization landscape theory of disorder in semiconductors I: Theory and modeling

We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called \emph{localization landscape}. These landscapes allow us to predict the localization regions of electron and hole quantum states, their corresponding energies, and the local densities of states. We show how the various outputs of these landscapes can be directly implemented into a drift-diffusion model of carrier transport and into the calculation of absorption/emission transitions. This creates a new computational model which accounts for disorder localization effects while also capturing two major effects of quantum mechanics, namely the reduction of barrier height (tunneling effect), and the raising of energy ground states (quantum confinement effect), without having to solve the Schr\"odinger equation. Finally, this model is applied to several one-dimensional structures such as single quantum wells, ordered and disordered superlattices, or multi-quantum wells, where comparisons with exact Schr\"odinger calculations demonstrate the excellent accuracy of the approximation provided by the landscape theory.

cond-mat.mtrl-sci↗

arXiv2017

Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers

Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased photocurrent spectroscopy is shown to be characteristic of the ternary alloy disorder. The broadening of the absorption edge observed for quantum wells emitting from violet to green (indium content ranging from 0 to 28\%) corresponds to a typical Urbach energy of 20~meV. A 3D absorption model is developed based on a recent theory of disorder-induced localization which provides the effective potential seen by the localized carriers without having to resort to the solution of the Schr\"odinger equation in a disordered potential. This model incorporating compositional disorder accounts well for the experimental broadening of the Urbach tail of the absorption edge. For energies below the Urbach tail of the InGaN quantum wells, type-II well-to-barrier transitions are observed and modeled. This contribution to the below bandgap absorption is particularly efficient in near-UV emitting quantum wells. When reverse biasing the device, the well-to-barrier below bandgap absorption exhibits a red shift, while the Urbach tail corresponding to the absorption within the quantum wells is blue shifted, due to the partial compensation of the internal piezoelectric fields by the external bias. The good agreement between the measured Urbach tail and its modeling by the new localization theory demonstrates the applicability of the latter to compositional disorder effects in nitride semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport through paths of minimal energy in the 2D landscape of disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schr\"odinger equation resolution. The theory also provides a good approximation to the density of states for the disordered system over the full range of energies required to account for transport at room-temperature. The current-voltage characteristics modeled by 3-D simulation of a full nitride-based light-emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

cond-mat.mtrl-sci↗