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arXiv · 2510.08220

Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high-$\kappa$ oxides

Hsin-Wen Huang·Xi-Jun Fang·Edward Chen·Yuh-Renn Wu
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Abstract

The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems. At low electric fields, phonon absorption becomes negligible, and mobility is governed by competition between remote Coulomb scattering~(RCS) at low inversion charge density and surface roughness scattering~(SRS) at high density, leading to a mobility peak. High-$\kappa$ dielectrics such as $\mathrm{HfO_2}$ introduce remote phonon scattering~(RPS), which suppresses mobility. Under high electric fields, phonon emission dominates at 4~K, limiting velocity enhancement and resulting in limited current improvement

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Hsin-Wen Huang, Xi-Jun Fang, Edward Chen, Yuh-Renn Wu. 2025-10-09. Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high-$\kappa$ oxides. https://doi.org/10.1088/1361-6463%2Fae7b4f

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