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Yipeng An

Publications and source records attributed to Yipeng An.

17 recordsLinked to original sources

Ah-SCDFT:A general approach for superconductivity with an-harmonic corrections

First-principles studies of superconductivity often neglect anharmonic effects (AHE), despite their crucial role in achieving quantitative accuracy in many materials. To bridge this gap, we introduce a general computational approach, termed anharmonic superconducting density functional theory (ah-SCDFT) which systematically incorporates anharmonic corrections into standard SCDFT. This approach allows for high-fidelity predictions of superconducting properties with only a modest increase in computational cost for a limited number of superconducting calculation convergence steps. We demonstrate the effectiveness and reliability of ah-SCDFT by applying it to the prototypical superconductor MgB2, accurately reproducing its superconducting behavior under both ambient conditions and applied pressure in excellent agreement with experiment. Our results establish ah-SCDFT as a powerful, efficient, and broadly applicable approach for quantitatively reliable studies of superconductivity and a promising tool for the prediction of new superconducting materials.

cond-mat.supr-con

Effect of superconductivity by Nb and V substitution in kagome CaPd5

Materials featuring kagome lattices have attracted significant research interest due to their unique geometric frustration, which gives rise to rich physical phenomena such as non-trivial topology, spin fluctuations, and superconductivity. In this work, using CaPd5 as the prototype structure, we discover and systematically investigate a new class of kagome superconductors, CaMxPd5-x (M = Nb and V) alloys. First-principles calculations confirm that these compounds are non-magnetic metals, among which four are dynamically stable: CaNb5, CaV5, CaNb2Pd3, and CaV2Pd3. CaNb5 is identified as a strong electron-phonon coupling (EPC) superconductor with the highest superconducting transition temperature (Tc) of 10.1 K, which can be further increased to 12.8 K under external pressure. In contrast, CaV5, CaNb2Pd3, and CaV2Pd3 exhibit weaker EPC and correspondingly lower Tc values. Furthermore, by applying the method of symmetry indicators, we systematically classify the topological and nodal characteristics of CaNb5, providing valuable insights for determining its superconducting pairing symmetry. Our findings demonstrate that Nb and V substitution in kagome CaPd5 provides an effective route for designing a new type of kagome superconductor with relatively high Tc. This study also offers new perspectives on topological superconductivity in kagome systems and establishes a useful guideline for discovering other superconducting materials with unique properties.

cond-mat.supr-con

Symmetry-Constrained Anomalous Transport in the Altermagnetic Material CuX$_2$ (X=F,Cl)

Recently discovered, altermagnetism represents a third class of collinear magnets. These materials exhibit zero net magnetization, similar to antiferromagnets, but display anomalous transport properties resembling those of ferromagnets. Altermagnetic materials manifest various anomalous electronic transport phenomena, including the anomalous Hall effect, anomalous Nernst effect, and anomalous thermal Hall effect. Additionally, they exhibit magneto-optical Kerr and Faraday effects, previously considered exclusive to ferromagnetic materials. These anomalous transport phenomena are constrained by symmetry, as revealed by density functional theory (DFT) calculations. However, an effective model-based approach to verify these symmetry constraints remains unavailable. In this Letter, we construct a $k\cdot p$ model for $d$-wave altermagnets CuX$_2$ (X=F,Cl) using spin space group representations and apply it to calculate the anomalous Hall effect. The symmetry-imposed transport properties predicted by the model are in agreement with the DFT results, providing a foundation for further investigation into symmetry-restricted transport phenomena in altermagnetic materials.

cond-mat.mtrl-sci

MPd5 kagome superconductors studied by density functional calculations

Kagome materials, which are composed of hexagons tiled with a shared triangle, have inspired enormous interest due to their unique structures and rich physical properties; exploring superconducting material systems with new kagome structures is still an important research direction. Here, we predict a type of kagome superconductor, MPd5 (M is a group-IIA metal element), and identify that it exhibits coexistence of superconductivity and nontrivial topological properties. We uncover its phonon-mediated superconductivity by the density functional theory for superconductors, predicting the superconducting transition temperatures (Tc) of 2.64, 2.03, and 1.50 K for CaPd5, SrPd5, and BaPd5, respectively. These Tc can be effectively tuned through the application of external pressure and electron doping. The present results also demonstrate that MPd5 have topological properties; e.g., CaPd5 shows topological nontrivial intersection near the Fermi level (EF). Our results indicate that MPd5 materials can be an emerging material platform with rich exotic physics in their kagome structures, and render themselves excellent candidates for superconducting and advanced functional materials that could be utilized in topological quantum computing and information technology.

cond-mat.supr-con

DFT+DMFT study on pressure-induced valence instability of CeCoSi

Rare-earth compounds RCoSi exhibit unique properties, with distinct structural behaviors depending on whether R is a light, middle or heavy rare-earth element. Among them, CeCoSi undergoes a structural phase transition under high pressure, with the phase transition pressure increasing as temperature rises. Some experimental studies suggest that the transition is closely related to the behavior of Ce-4f electrons. In this work, we systematically studied the evolution of the electronic structure of CeCoSi with temperature and pressure. First, we used the DFT+DMFT to calculate the energy-volume curve of CeCoSi, which was in good agreement with the experimental results and far superior to the DFT method. Next, we studied the electronic structure of CeCoSi under different pressures and temperatures using DFT+DMFT. Our results show that CeCoSi is a Kondo metal with hybridization of Ce-4f and Co-3d. As pressure increases, the renormalization factor Z of Ce-4f5/2 increases, the occupancy number of Ce-4f electrons decreases, and CeCoSi transitions to a mixed-valence state at ~5.5 GPa in 100 K. The pressure of the quantum phase transition PQ is slightly higher than the experimentally observed structural phase transition pressure PS, and the PQ increases with increasing temperature, which is consistent with the behavior of PS in experiment. In addition, the hybridization strength of Ce-4f in the mixed-valence state is significantly greater than in the Kondo metal state. Our results suggest that the valence instability of Ce-4f is the cause of the structural phase transition. As pressure increases, Ce-4f electrons delocalize and CeCoSi transitions to mixed-valence state. This valence instability may cause redistribution of electron density, thus inducing a structural phase transition. Our work reveals the cause of the structural phase transition of CeCoSi under high pressure.

cond-mat.str-el

Higher-order topological and nodal superconducting transition-metal sulfides MS (M = Nb and Ta)

Intrinsic topological superconducting materials are exotic and vital to develop the next-generation topological superconducting devices, topological quantum calculations, and quantum information technologies. Here, we predict the topological and nodal superconductivity of MS (M = Nb and Ta) transition-metal sulfides by using the density functional theory for superconductors combining with the symmetry indicators. We reveal their higher-order topology nature with an index of Z4 = 2. These materials have a higher Tc than the Nb or Ta metal superconductors due to their flat-band and strong electron-phonon coupling nature. Electron doping and lighter isotopes can effectively enhance the Tc. Our findings show that the MS (M = Nb and Ta) systems can be new platforms to study exotic physics in the higher-order topological superconductors, and provide a theoretical support to utilize them as the topological superconducting devices in the field of advanced topological quantum calculations and information technologies.

cond-mat.supr-con

Topological and nodal superconductor kagome magnesium triboride

Recently the kagome compounds have inspired enormous interest and made some great progress such as in the field of superconductivity and topology. Here we predict a different kagome magnesium triboride (MgB3) superconductor with a calculated Tc ~12.2 K and Tc ~15.4 K by external stress, the potentially highest among the reported diverse kagome-type superconductors. We reveal its various exotic physical properties including the van Hove singularity, flat-band, multiple Dirac points, and nontrivial topology. The system can be described by a two-band model with highly anisotropic superconducting gaps on Fermi surfaces. Its topological and nodal superconducting nature is unveiled by a recently developed symmetry indicators method. Our results suggest that MgB3 can be a new platform to study exotic physics in the kagome structure, and pave a way to seek for more superconductors and topological materials with XY3-type kagome lattice.

cond-mat.supr-con

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

cond-mat.mtrl-sci

Precise phase control of large-scale inorganic perovskites via vapor-phase anion-exchange strategy

Anion exchange offers great flexibility and high precision in phase control, compositional engineering and optoelectronic property tuning. Different from previous successful anion exchange process in liquid solution, herein, we develop a vapor-phase anion-exchange strategy to realize the precise phase and bandgap control of large-scale inorganic perovskites by using gas injection cycle, produing some perovskites such as CsPbCl3 which has never been reported in thin film morphology. Ab-initio calculations also provide the insightful mechanism to understand the impact of anion exchange on tuning the electronic properties and optimizing the structural stability. Furthermore, because of precise control of specific atomic concentrations, intriguing tunable photoluminsecence is observed and photodetectors with tunable photoresponse edge from green to ultraviolet light can be realized accurately with an ultrahigh spectral resolution of 1 nm. Therefore, we offer a new, universal vapor-phase anion exchange method for inorganic perovskite with fine-tunable optoelectronic properties.

physics.app-ph

Multifunctional Lateral Transition-Metal Disulfides Heterojunctions

The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The lateral VS2|MoS2 heterojunction diodes show a perfect rectifying effect and are promising for the applications of Schottky diodes. A large spin-polarization ratio is observed for the A-type device and pure spin-mediated current is then realized. The gate voltage significantly tunes the current and rectification ratio of their field-effect transistors (FETs). In addition, they all have sensitive photoresponse to blue light, and could be used as photodetector and photovoltaic device. Moreover, they generate the effective thermally-driven current when a temperature gratitude appears between the two terminals, suggesting them as potential thermoelectric materials. Hence, the lateral VS2|MoS2 heterojunctions show a multifunctional nature and have various potential applications in spintronics, optoelectronics, and spin caloritronics.

cond-mat.mtrl-sci

Evaluating the exfoliation of two-dimensional materials with a Green's function surface model

Previous methods for the evaluation of the exfoliation of two-dimensional (2D) layered materials have drawbacks in computational efficiency and are unable to describe cases with semi-infinite substrates. Based on a Green's function surface (GFS) model, here we develop a new approach to efficiently determine the tendency of exfoliation of 2D materials from their bulk crystals or semi-infinite substrates. By constructing appropriate surface configurations, we may calculate the exfoliation energy more precisely and quickly than the traditional way with the slab model. Furthermore, the GFS approach can provide angle-resolved photoemission spectroscopy (ARPES) of surface systems for direct comparison with experimental data. Our findings indicate that the GFS approach is powerful for studies of 2D materials and various surface problems.

cond-mat.mtrl-sci

MoB2:a new multifunctional transition metal diboride monolayer

Several layered transition metal borides can now be realized by a simple and general fabrication method [Fokwa et al.,Adv. Mater. 2018, 30, 1704181],inspiring our interest to transition metal borides monolayer. Here, we predict a new two-dimensional (2D) transition metal diboride MoB2 monolayer (ML) and study its intrinsic mechanical, thermal, electronic, and transport properties. The MoB2 ML has isotropic mechanic properties along the zigzag and armchair directions with a large Young's stiffness, and has an ultralow room-temperature thermal conductivity. The Mo atoms dominate the metallic nature of MoB2 ML. It shows an obvious electrical anisotropy and a current-limiting behavior. Our findings suggest that MoB2 ML is a promising multifunctional material used in ultrathin high-strength mechanical materials, heat insulating materials, electrical-anisotropy-based materials, and current limiters. It is helpful for the experimentalists to further prepare and utilize the transition metal diboride 2D materials.

cond-mat.mtrl-sci

Unveiling the Electric-current-limiting and Photodetection Effect in Two-dimensional Hydrogenated Borophene

The electronic transport and photoelectric properties of hydrogenated borophene B4H4, which was realized in a recent experiment by Nishino [J. Am. Chem. Soc. 139, 13761 (2017)], are systematically investigated using the density functional theory and non-equilibrium Green's function methods. We find that B4H4 exhibits a perfect current-limiting effect and has high (along the zigzag direction) and low (along the armchair one) optional levels due to its strong electrical anisotropy. Moreover, B4H4 can generate sizable photocurrents under illumination, with strong photoelectronic response to blue/green light along the zigzag/armchair direction. Our work demonstrates that B4H4 is promising for the applications of current limiter and photodetectors.

cond-mat.mes-hall

Multifunctional 2D CuSe monolayer nanodevice

In a very recent experimental work [Gao et al., 2018 Adv. Mater. 30, 1707055], a graphene-like CuSe monolayer was realized. Motivated by this success, we performed first-principles calculations to investigate its electronic transport and photoelectronic properties. We find that the CuSe ML shows a strong electrical anisotropy, and its current-voltage (I-V) curves along the zigzag and armchair directions are noticeably different. The CuSe ML also displays a useful negative differential resistance (NDR) effect along the both directions when the bias is beyond 1.0 V. Moreover, it has a large photon absorption to orange light. Our study suggests that CuSe ML is a multifunctional material and has various potential applications in electrical-anisotropy-based, NDR-based, and even optical nanodevices.

cond-mat.mes-hall

Negative differential conductance effect and electrical anisotropy of 2D ZrB2 monolayers

Two-dimensional (2D) metal-diboride ZrB2 monolayers was predicted theoretically as a stable new electronic material [A. Lopez-Bezanilla, Phys. Rev. Mater., 2018, 2, 011002 (R)]. Here, we investigate its electronic transport properties along the zigzag (z-ZrB2) and armchair (a-ZrB2) directions, using the density functional theory and non-equilibrium Green's function methods. Under low biases, the 2D ZrB2 shows a similar electrical transport along zigzag and armchair directions as electric current propagates mostly via the metallic Zr-Zr bonds. However, it shows an electrical anistropy under high biases, and its I-V curves along zigzag and armchair directions diverge as the bias voltage is higher than 1.4 V, as more directional B-B transmission channels are opened. Importantly, both z-ZrB2 and a-ZrB2 show a pronounced negative differential conductance (NDC) effect and hence they can be promising for the use in NDC-based nanodevices.

cond-mat.mes-hall

Tuning the electronic structures and transport properties of zigzag blue phosphorene nanoribbons

In recent years, single element two-dimensional atom crystal materials have aroused extensive interest in many applications. Blue phosphorus, successfully synthesized on Au substrate by molecular beam epitaxy not long ago, shows unusual geometrical and electronic structures. We investigate the electronic structures and transport properties of zigzag blue phosphorene nanoribbons by using a first-principles method, which can be obviously tuned via different groups passivation on the both edges. The ZBPNRs-H and ZBPNRs-OH present a wide gap semiconductor property. While the ZBPNRs-O are metallic. Interestingly, the current-voltage curves of ZBPNRs-O show a negative differential resistive effect, which is independent on the ribbon width. The electric current through the ZBPNRs-O is mainly flowing along the both outside zigzag phosphorus chains via the way of P-P bond current. Through modifying the both edges with various functional groups, the ZBPNRs can display some important functional characteristics and become a candidate of NDR devices.

cond-mat.mtrl-sci

How does the electric current propagate through the fully-hydrogenated borophene?

We study the electronic transport properties of two-dimensional (2D) fully-hydrogenated borophene (namely, borophane), using the density functional theory and non-equilibrium Green's function approaches. Borophane shows a perfect electrical transport anisotropy and is promising for applications. Along the peak- or equivalently the valley-parallel direction, the 2D borophane exhibits a metallic characteristic and its current-voltage (I-V) curve shows a linear behavior, corresponding to the ON state in borophane-based nano-switch. In this case, electrons mainly propagate via the B-B bonds along the linear boron chains. In contrast, the electron transmission is almost forbidden along the perpendicular buckled direction (i.e., the OFF state), due to its semi-conductor property. Our work demonstrates that 2D borophane could combine the metal and semiconductor features and can be a promising candidate of nano-switching materials with stable structure and high ON/OFF ratio.

cond-mat.mtrl-sci