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arXiv · 2005.00258

Multifunctional Lateral Transition-Metal Disulfides Heterojunctions

Yipeng An·Yusheng Hou·Kun Wang·Shijing Gong·Chunlan Ma·Chuanxi Zhao·Tianxing Wang·Zhaoyong Jiao·Heyan Wang·Ruqian Wu
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Abstract

The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The lateral VS2|MoS2 heterojunction diodes show a perfect rectifying effect and are promising for the applications of Schottky diodes. A large spin-polarization ratio is observed for the A-type device and pure spin-mediated current is then realized. The gate voltage significantly tunes the current and rectification ratio of their field-effect transistors (FETs). In addition, they all have sensitive photoresponse to blue light, and could be used as photodetector and photovoltaic device. Moreover, they generate the effective thermally-driven current when a temperature gratitude appears between the two terminals, suggesting them as potential thermoelectric materials. Hence, the lateral VS2|MoS2 heterojunctions show a multifunctional nature and have various potential applications in spintronics, optoelectronics, and spin caloritronics.

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Yipeng An, Yusheng Hou, Kun Wang, Shijing Gong, Chunlan Ma, Chuanxi Zhao, Tianxing Wang, Zhaoyong Jiao, Heyan Wang, Ruqian Wu. 2020-05-01. Multifunctional Lateral Transition-Metal Disulfides Heterojunctions. https://doi.org/10.1002/adfm.202002939

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