arXiv subjects

Xiyu Hong

Publications and source records attributed to Xiyu Hong.

5 recordsLinked to original sources

arXiv2025

Magnetic properties of molecular beam epitaxy-grown ultrathin Cr2Ge2Te6 films down to monolayer limit on Si substrates

Cr2Ge2Te6, a prototypical van der Waals ferromagnetic semiconductor, have attracted significant interest for its potential applications in high-performance spintronics. However, the magnetic ground state of monolayer Cr2Ge2Te6 remains elusive due to fragile and irregular-shaped thin flake samples with weak magnetic signals. Here, we successfully grow uniform ferromagnetic Cr2Ge2Te6 films down to monolayer by molecular beam epitaxy. By exploiting a self-limiting growth mode, we achieve synthesis of uniform monolayer Cr2Ge2Te6 films across entire millimeter-scale Si substrates. Through a combination of superconducting quantum interference device magnetometry and anomalous Hall effect measurements, we establish that monolayer Cr2Ge2Te6 exhibits intrinsic ferromagnetism with perpendicular magnetic anisotropy below ~10 K, albeit with strong magnetic fluctuations characteristic of its two-dimensional nature. Furthermore, a systematic thickness-dependent study reveals a crossover from this fluctuation-dominated two-dimensional magnetism turns into conventional long-range ferromagnetic order as the film thickness increases. Our work not only definitively establishes the intrinsic ferromagnetic ground state of monolayer Cr2Ge2Te6, but also provides a scalable, silicon-compatible route for preparing the two-dimensional magnet for future spintronic or quantum devices.

cond-mat.mtrl-sci↗

arXiv2025

Thickness-Induced Topological Phase Transition Investigated by Helicity Dependent Photocurrent in $\alpha$-Sn/CdTe(110)

$\alpha$-Sn exhibits a rich topological phase diagram, yet experimental methods to tune and distinguish these phases remain limited. Here, we investigated the helicity-dependent photocurrent (HDPC) in $\alpha$-Sn films of varying thickness grown on CdTe(110) by molecular beam epitaxy. The HDPC of the 5 nm $\alpha$-Sn film shows an odd-function dependence on incident angle, whereas that of the 10 and 30 nm films exhibit an even-function dependence. Combined with high-resolution transmission electron microscopy (HR-TEM), point-group symmetry analysis, and first-principles calculations, it is revealed that a thickness-driven topological phase transition from a two dimensional (2D) to a three dimensional (3D) topological insulator occurs between 5 and 10 nm. These results demonstrate that HDPC serves as a sensitive diagnostic tool for topological phase transitions. The tunable electronic properties of $\alpha$-Sn(110) films enable thickness- and strain-mediated control of topological states, establishing a versatile platform for exploring emerging topological phenomena and developing spin-based devices.

cond-mat.mtrl-sci↗

arXiv2025

Designing Guidance for Multiple Valley-based Topological States Driven by Magnetic Substrates: Potential Applications at High Temperatures

Valley-based topological phases offer a wealth of exotic quantum states with tunable functionalities, driven by the valley degree of freedom. In this work, by constructing heterostructures of germanene (silicene, stanene) on various magnetic substrates, we address key tuning factors such as the spin-orbit coupling (SOC) strength of the substrate, magnetic orientations, and stacking orders, all of which govern multiple valley-based topological features. We present a comprehensive guiding principle for the efficient manipulation of these features, achieved simply by designing and modulating the magnetic properties of the underlying substrates. Specifically, increasing the SOC strength of the magnetic substrate acilitates a range of topological phase transitions characterized by different Chern numbers, with many systems exhibiting a transition from quantum valley Hall to quantum anomalous Hall (QAH) states. Additionally, rotating the in-plane magnetic orientation of the substrate enables tunability of the Chern number and chirality, within a moderate range of SOC strength. Furthermore, the antiferromagnetic coupling of the magnetic substrate can induce valley-based QAH states with substantial valley gaps, leveraging its high Curie temperature (TC) to enable the realization of multiple tunable magnetic topologies at elevated temperatures. Our findings provide a straightforward strategy for the design and manipulation of spintronic and valleytronic devices that can potentially operate under high-temperature conditions.

cond-mat.mtrl-sci↗

arXiv2024

Universally optimizable strategy for magnetic gaps towards high-temperature quantum anomalous Hall states via magnetic-insulator/topological-insulator building-blocks

Optimizing the magnetic Zeeman-splitting term, specifically the magnetic gap of the topological surface states (TSSs), is a crucial issue and central challenge in advancing higher-temperature quantum anomalous Hall (QAH) states. In this work, we demonstrate a counterintuitive, nonmonotonic relationship between the magnetic gap and the hybridization strength in ferromagnetic-insulator (FMI)/topological-insulator (TI) sandwich structures. Concretely, insufficient hybridization strength fails to induce a substantial magnetic gap; while excessive hybridization incandesces the competition between kinetic and Coulomb exchange interactions, thereby reducing the gap. Strong hybridization strength also spatially delocalizes the TSSs, diminishing the effective orbital coupling between TSS-based p and magnetic d orbitals, which further weakens kinetic and Coulomb exchange interaction strength. Moreover, modifying the stacking order offers an experimentally viable approach to optimizing magnetic gaps, enabling the tunability of Chern numbers, chirality and maximizing global gaps. These findings unveil a universal guiding principle for optimizing magnetic gaps in FMI-TI proximity-based QAH systems, offering valuable insights for advancing experimental implementations in this field.

cond-mat.mtrl-sci↗

arXiv2024

Multimechanism quantum anomalous Hall and Chern number tunable states in germanene (silicene, stanene)/$M$Bi$_2$Te$_4$ heterostructures

By constructing germanene (silicene, stanene)/$M$Bi$_2$Te$_4$ ($M$ = 3d-transition elements) heterostructures, we discovered and designed multimechanism quantum-anomalous-Hall (QAH) systems, including $\Gamma$-based QAH, $K$-$K'$-connected QAH, and valley-polarized $K$- or $K'$-based QAH states via first-principle computations. The unique systems possess a global gap and tunable Chern number. The coexisting conventional $\Gamma$-based QAH state of $M$Bi$_2$Te$_4$ and valley-polarized $K$($K'$)-based QAH state of germanene (silicene, stanene), with opposite chirality, can interact with each other. Adjusting magnetic configurations of $M$Bi$_2$Te$_4$-layers not only switch on (off) the QAH conductance, but also modulate Chern numbers exactly. For example, the germanene/bilayer-NiBi$_2$Te$_4$ possesses the Chern number $C = +1$ in ferromagnetic couplings and $C = +2$ in antiferromagnetic couplings. The novel multimechanism QAH insulators, which are achievable in experiments, provide a new approach to spintronics and valleytronics based on topological states of matter.

cond-mat.mtrl-sci↗