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arXiv · 2512.09557

Magnetic properties of molecular beam epitaxy-grown ultrathin Cr2Ge2Te6 films down to monolayer limit on Si substrates

Pengfei Ji·Ruixuan Liu·Tianchen Zhu·Jinxuan Liang·Yang Chen·Yitian Tong·Yunhe Bai·Zuhan Geng·Fangting Chen·Yunyi Zang·Xiyu Hong·Jiatong Zhang·Luyi Yang·Qi-Kun Xue·Ke He·Xiao Feng
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Abstract

Cr2Ge2Te6, a prototypical van der Waals ferromagnetic semiconductor, have attracted significant interest for its potential applications in high-performance spintronics. However, the magnetic ground state of monolayer Cr2Ge2Te6 remains elusive due to fragile and irregular-shaped thin flake samples with weak magnetic signals. Here, we successfully grow uniform ferromagnetic Cr2Ge2Te6 films down to monolayer by molecular beam epitaxy. By exploiting a self-limiting growth mode, we achieve synthesis of uniform monolayer Cr2Ge2Te6 films across entire millimeter-scale Si substrates. Through a combination of superconducting quantum interference device magnetometry and anomalous Hall effect measurements, we establish that monolayer Cr2Ge2Te6 exhibits intrinsic ferromagnetism with perpendicular magnetic anisotropy below ~10 K, albeit with strong magnetic fluctuations characteristic of its two-dimensional nature. Furthermore, a systematic thickness-dependent study reveals a crossover from this fluctuation-dominated two-dimensional magnetism turns into conventional long-range ferromagnetic order as the film thickness increases. Our work not only definitively establishes the intrinsic ferromagnetic ground state of monolayer Cr2Ge2Te6, but also provides a scalable, silicon-compatible route for preparing the two-dimensional magnet for future spintronic or quantum devices.

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Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Jinxuan Liang, Yang Chen, Yitian Tong, Yunhe Bai, Zuhan Geng, Fangting Chen, Yunyi Zang, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi-Kun Xue, Ke He, Xiao Feng. 2025-12-10. Magnetic properties of molecular beam epitaxy-grown ultrathin Cr2Ge2Te6 films down to monolayer limit on Si substrates. https://arxiv.org/abs/2512.09557

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