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Xiaolong Chen

Publications and source records attributed to Xiaolong Chen.

At least 91 records · Page 5Linked to original sources

Optimal resource diffusion for suppressing disease spreading in multiplex networks

Resource diffusion is an ubiquitous phenomenon, but how it impacts epidemic spreading has received little study. We propose a model that couples epidemic spreading and resource diffusion in multiplex networks. The spread of disease in a physical contact layer and the recovery of the infected nodes are both strongly dependent upon resources supplied by their counterparts in the social layer. The generation and diffusion of resources in the social layer are in turn strongly dependent upon the state of the nodes in the physical contact layer. Resources diffuse preferentially or randomly in this model. To quantify the degree of preferential diffusion, a bias parameter that controls the resource diffusion is proposed. We conduct extensive simulations and find that the preferential resource diffusion can change phase transition type of the fraction of infected nodes. When the degree of interlayer correlation is below a critical value, increasing the bias parameter changes the phase transition from double continuous to single continuous. When the degree of interlayer correlation is above a critical value, the phase transition changes from multiple continuous to first discontinuous and then to hybrid. We find hysteresis loops in the phase transition. We also find that there is an optimal resource strategy at each fixed degree of interlayer correlation where the threshold reaches a maximum and under which the disease can be maximally suppressed. In addition, the optimal controlling parameter increases as the degree of inter-layer correlation increases.

physics.soc-ph↗

Towards diluted magnetism in TaAs

Magnetism in Weyl semimetals is desired to investigate the interaction between the magnetic moments and Weyl fermions, e.g. to explore anomalous quantum Hall phenomena. Here we demonstrate that proton irradiation is an effective tool to induce ferromagnetism in the Weyl semimetal TaAs. The intrinsic magnetism is observed with a transition temperature above room temperature. The magnetic moments from d states are found to be localized around Ta atoms. Further, the first-principles calculations indicate that the d states localized on the nearest-neighbor Ta atoms of As vacancy sites are responsible for the observed magnetic moments and the long-ranged magnetic order. The results show the feasibility of inducing ferromagnetism in Weyl semimetals so that they may facilitate the applications of this material in spintronics.

cond-mat.mtrl-sci↗

Suppressing epidemic spreading in multiplex networks with social-support

Although suppressing the spread of a disease is usually achieved by investing in public resources, in the real world only a small percentage of the population have access to government assistance when there is an outbreak, and most must rely on resources from family or friends. We study the dynamics of disease spreading in social-contact multiplex networks when the recovery of infected nodes depends on resources from healthy neighbors in the social layer. We investigate how degree heterogeneity affects the spreading dynamics. Using theoretical analysis and simulations we find that degree heterogeneity promotes disease spreading. The phase transition of the infected density is hybrid and increases smoothly from zero to a finite small value at the first invasion threshold and then suddenly jumps at the second invasion threshold. We also find a hysteresis loop in the transition of the infected density. We further investigate how an overlap in the edges between two layers affects the spreading dynamics. We find that when the amount of overlap is smaller than a critical value the phase transition is hybrid and there is a hysteresis loop, otherwise the phase transition is continuous and the hysteresis loop vanishes. In addition, the edge overlap allows an epidemic outbreak when the transmission rate is below the first invasion threshold, but suppresses any explosive transition when the transmission rate is above the first invasion threshold.

physics.soc-ph↗

Quantum linear magnetoresistance in NbTe2

NbTe2 crystal is quasi-2D layered semimetal with charge density wave ground state showing a distorted-1T structure at room temperature. Here we report the anisotropic magneto-transport properties of NbTe2. An anomalous linear magnetoresistance up to 30% at 3 K in 9 T was observed, which can be well explained by quantum linear magnetoresistance model. Our results reveal that a large quasi-2D Fermi surface and small Fermi pockets with linearly dispersive bands coexist in NbTe2. The comparison with the isostructural material TaTe2 provides more information about the electronic structure evolution with charge density wave transitions in NbTe2 and TaTe2.

cond-mat.mtrl-sci↗

Impurity screening and stability of Fermi arcs against Coulomband magnetic scattering in a Weyl monopnictide

We present a quasiparticle interference study of clean and Mn surface-doped TaAs, a prototypical Weyl semimetal, to test the screening properties as well as the stability of Fermi arcs against Coulomb and magnetic scattering. Contrary to topological insulators, the impurities are effectively screened in Weyl semimetals. The adatoms significantly enhance the strength of the signal such that theoretical predictions on the potential impact of Fermi arcs can be unambiguously scrutinized. Our analysis reveals the existence of three extremely short, previously unknown scattering vectors. Comparison with theory traces them back to scattering events between large parallel segments of spin-split trivial states, strongly limiting their coherence. In sharp contrast to previous work [R. Batabyal et al., Sci. Adv. 2, e1600709 (2016)], where similar but weaker subtle modulations were interpreted as evidence of quasiparticle interference originating from Femi arcs, we can safely exclude this being the case. Overall, our results indicate that intra- as well as inter-Fermi arc scattering are strongly suppressed and may explain why-in spite of their complex multiband structure-transport measurements show signatures of topological states in Weyl monopnictides.

cond-mat.mes-hall↗

Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2

TaTe2 is a quasi-2D charge density wave (CDW) compound with distorted-1T type structure exhibiting double-zigzag chains. Here we report the Fermi surface topology of low temperature phase of TaTe2 (LT-TaTe2) by anisotropic magneto-transport and magnetic measurements on high-quality single crystals. An anomalous large linear magnetoresistance up to 140% at 3 K in 9 T was observed, suggesting the existence of a small Fermi pocket in Dirac cone state in quantum transport models. Meanwhile, strong magnetic anisotropy was observed for B (001) and B//(001). Angle-dependent magnetoresistance and de Hass-van Alphen oscillations suggest the anisotropy of the normal Fermi surface and the small Fermi pocket in Dirac cone state.

cond-mat.str-el↗

Atomically thin quantum light emitting diodes

Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this, we fabricate a light emitting diode structure comprising single layer graphene, thin hexagonal boron nitride and TMD mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the TMD family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

cond-mat.mes-hall↗

Two new parent compounds for FeSe-based superconducting phases

It is well established that the occurrence of superconductivity in iron pnictides is closely related to the tetragonal to orthorhombic structural and antiferromagnetic (AFM) phase transitions. It, however, has not been clear whether the same scenario is appropriate for iron chalcogenide counterparts due to the absence of parent compounds for the latter family of superconductors. Here, we report the synthesis and structure determination of two novel phases in ethylenediamine intercalated FeSe, one is tetragonal and the other orthorhombic in room temperature, which can be stabilized with neutral spacer layers. Both phases can be regarded as the parent compounds for superconductivity as they are non-superconducting (non-SC) in pristine form and superconducting (SC) with Tc up to 38K and 46K, respectively after Na doping, and the switch between SC and no-SC is reversible. Moreover, the two non-SC parent compounds show no evidence of long-range magnetic ordering down to 2K, only with dynamic spin fluctuations at low temperatures, suggesting that no competition between SC and AFM ordering. Our results reveal that undoped iron selenides are quantum paramagnetic in ground state, implying that they are distinct from their pnictide counterparts in pairing mechanism.

cond-mat.supr-con↗

Understanding doping, vacancy, lattice stability and superconductivity in KxFe2-ySe2

Metal-intercalated iron selenides are a class of superconductors that have received much attention but are less understood in comparison with their FeAs-based counterparts. Here, the controversial issues such as Fe vacancy, the real phase responsible for superconductivity, and lattice stability have been addressed based on first-principles calculations. New insights into the distinct features in terms of carrier doping have been revealed.

cond-mat.supr-con↗

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layer TMDC devices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 cm2/V s to 16000 cm2/V s, as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-type TMDC channels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.

cond-mat.mtrl-sci↗

Probing the Electronic States in Black Phosphorus Vertical Heterostructures

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices offer great advantages in probing the electron states of monolayer and few-layer phosphorene at temperatures down to 2 K through capacitance spectroscopy. Electronic states in the conduction and valence bands of phosphorene are accessible over a wide range of temperature and frequency. Exponential band tails have been determined to be related to disorders. Unusual phenomena such as the large temperature-dependence of the electron state population in few-layer phosphorene have been observed and systematically studied. By combining the first-principles calculation, we identified that the thermal excitation of charge trap states and oxidation-induced defect states were the main reasons for this large temperature dependence of the electron state population and degradation of the on-off ratio in phosphorene field-effect transistors.

cond-mat.mtrl-sci↗

Intrinsic diamagnetism in the Weyl semimetal TaAs

We investigate the magnetic properties of TaAs, a prototype Weyl semimetal. TaAs crystals show weak diamagnetism with magnetic susceptibility of about -7 * 10^{-7} emu/(g*Oe) at 5 K. A general feature is the appearance of a minimum at around 185 K in magnetization measurements as a function of temperature. No phase transition is observed in the temperature range between 5 K and 400 K. The magnetic properties indicate that the intrinsic Fermi level in TaAs is not located at the Weyl nodes, in agreement with the theory prediction.

cond-mat.mtrl-sci↗

Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism

Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently be accounted for by trace contamination. To resolve this issue, we studied the variation of the magnetic properties of SiC after neutron irradiation with fluence covering four orders of magnitude. A large paramagnetic component has been induced and scales up with defect concentration, which can be well accounted for by uncoupled divacancies. However, the ferromagnetic contribution is still weak and only appears in the low fluence range of neutrons or after annealing treatments. First-principles calculations hint towards a mutually exclusive role of the concentration of defects: Defects favor spin polarization at the expense of magnetic interaction. Combining both experimental and first-principles calculation results, the defect-induced ferromagnetism can be understood as a local effect which cannot be scaled up with the volume. Therefore, our investigation answers the long-standing question why the defect-induced ferromagnetic signal is weak.

cond-mat.mtrl-sci↗

Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures

Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explained the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.

cond-mat.mes-hall↗

High quality sandwiched black phosphorus heterostructure and its quantum oscillations

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices. Recently, atomically thin black phosphorus (BP) has become a new member of the 2D materials family with high theoretical mobility and tunable bandgap structure. However, degradation of properties under atmospheric conditions and high-density charge traps in BP have largely limited its mobility (~400 cm2/Vs at room temperature) and thus restricted its future applications. Here, we report the fabrication of stable BN-BP-BN heterostructures by encapsulating atomically thin BP between hexagonal boron nitride (BN) layers to realize ultraclean BN-BP interfaces which allow a record-high field-effect mobility ~1350 cm2/Vs at room temperature and on-off ratios over 10^5. At low temperatures, the mobility reaches ~2700 cm2/Vs and quantum oscillations in BP 2D hole gas are observed at low magnetic fields. Importantly, the BN-BP-BN heterostructure can effectively avoid the quality degradation of BP in ambient condition.

cond-mat.mtrl-sci↗

Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy

We demonstrate that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. Bernal-stacked few-layer graphene has been investigated by analyzing its Landau level spectra through quantum capacitance measurements. We find that in trilayer graphene, the interlayer interaction parameters were similar to that of graphite. However, in tetralayer graphene, the hopping parameters between the bulk and surface bilayers are quite different. This shows a direct evidence for the surface relaxation phenomena. In spite of the fact that the Van der Waals interaction between the carbon layers is thought to be insignificant, we suggest that the interlayer interaction is an important factor in explaining the observed results and the symmetry-breaking effects in graphene sublattice are not negligible.

cond-mat.mtrl-sci↗

Tunable Cobalt Vacancies and Related Properties in LaCoxAs2

The origin of transition metal vacancies and their effects on the properties of ThCr2Si2-type compounds have been less studied and poorly understood. Here we carefully investigate the structure, physical properties, and electronic structure for a series of lanthanum cobalt arsenides with nominal composition of LaCoxAs2 (1.6 < = x < = 2.1). It is revealed that the occupancy of Co can be tuned between 1.98(1) and 1.61(1). The structural analyses based on X-ray and neutron diffractions show the existence of Co vacancies results from charge balance due to the formation of bond between As-As. These Co vacancies affect the magnetic and electrical properties greatly, adjusting the Curie temperature from 205 to 47 K and increasing the resistivity by more than 100%. First principles calculations indicate that the Co vacancies weaken the spin polarization and reduce the density of states at the Fermi level, resulting in decreased Curie temperature and increased resistivity, respectively. Our results address the importance of transition metal vacancies in ThCr2Si2-type materials and offer a reliable route to tune the magnetism of ThCr2Si2-type structure.

cond-mat.str-el↗

High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very obvious and followed the metallic electrode behavior of numerical simulations, while the theoretically predicted negative quantum capacitance was not observed, possibility due to the over-estimated or weakened interactions between the graphene nanoribbon and side-gate electrodes.

cond-mat.mes-hall↗