arXiv subjects

Xiaolin Wang

Publications and source records attributed to Xiaolin Wang.

At least 73 records · Page 4Linked to original sources

arXiv2023

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and volatile tunability limit its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of SOI via constructing ferroelectric Rashba architectures, i.e., 2D Bi2O2Se/PMN-PT ferroelectric field effect transistors. The experimentally observed weak antilocalization (WAL) cusp in Bi2O2Se films implies the Rashba-type SOI that arises from asymmetric confinement potential. Significantly, taking advantage of the switchable ferroelectric polarization, the WAL-to-weak localization (WL) transition trend reveals the competition between spin relaxation and dephasing process, and the variation of carrier density leads to a reversible and nonvolatile modulation of spin relaxation time and spin splitting energy of Bi2O2Se films by this ferroelectric gating. Our work provides a scheme to achieve nonvolatile control of Rashba SOI with the utilization of ferroelectric remanent polarization.

cond-mat.mtrl-sci↗

arXiv2023

Magnetotransport and Berry phase Tuning in Gd-doped Bi2Se3 Topological Insulator Single Crystals

The Berry phase is an important concept in solids, correlated to the band topology, axion electrodynamics and potential applications of topological materials. Here, we investigate the magnetotransport and Berry phase of rare earth element Gd doped Bi2Se3 (Gd_Bi2Se3) topological insulator at low temperatures and high magnetic fields. Gd_Bi2Se3 single crystals show Shubnikov-de Haas (SdH) oscillations with nontrivial Berry phase while Bi2Se3 single crystals show zero Berry phase in SdH oscillations. The temperature dependent magnetization curves can be well fitted with the Curie-Weiss law in 3-300 K region, indicating no magnetic ordering in Gd_Bi2Se3 crystals. Moreover, Gd doping has limited influence on the quantum oscillation parameters (e.g., frequency of oscillations, the area of the Fermi surface, effective electron mass, Fermi wave vectors etc.), but has an impact on the Hall mobility, carrier density, and band topology. Our results demonstrate that Gd doping can tune the Berry phase of topological insulators effectively, which may pave a way for the future realization of many predicted exotic transport phenomena of topological origin.

cond-mat.mtrl-sci↗

arXiv2023

FHPM: Fine-grained Huge Page Management For Virtualization

As more data-intensive tasks with large footprints are deployed in virtual machines (VMs), huge pages are widely used to eliminate the increasing address translation overhead. However, once the huge page mapping is established, all the base page regions in the huge page share a single extended page table (EPT) entry, so that the hypervisor loses awareness of accesses to base page regions. None of the state-of-the-art solutions can obtain access information at base page granularity for huge pages. We observe that this can lead to incorrect decisions by the hypervisor, such as incorrect data placement in a tiered memory system and unshared base page regions when sharing pages. This paper proposes FHPM, a fine-grained huge page management for virtualization without hardware and guest OS modification. FHPM can identify access information at base page granularity, and dynamically promote and demote pages. A key insight of FHPM is to redirect the EPT huge page directory entries (PDEs) to new companion pages so that the MMU can track access information within huge pages. Then, FHPM can promote and demote pages according to the current hot page pressure to balance address translation overhead and memory usage. At the same time, FHPM proposes a VM-friendly page splitting and collapsing mechanism to avoid extra VM-exits. In combination, FHPM minimizes the monitoring and management overhead and ensures that the hypervisor gets fine-grained VM memory accesses to make the proper decision. We apply FHPM to improve tiered memory management (FHPM-TMM) and to promote page sharing (FHPM-Share). FHPM-TMM achieves a performance improvement of up to 33% and 61% over the pure huge page and base page management. FHPM-Share can save 41% more memory than Ingens, a state-of-the-art page sharing solution, with comparable performance.

cs.OS↗

arXiv2023

Antiferromagnetic topological insulating state in Tb$_{0.02}$Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystals

Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed inmagnetic-topological-insulator-based devices. In this work, we report a successful doping of rare earth element Tb into Bi$_{1.08}$Sb$_{0.9}$Te$_2$S topological insulator single crystals, in which the Tb moments are antiferromagnetically ordered below ~10 K. Benefiting from the in-bulk-gap Fermi level, transport behavior dominant by the topological surface states is observed below ~ 150 K. At low temperatures, strong Shubnikov-de Haas oscillations are observed, which exhibit 2D-like behavior. The topological insulator with long range magnetic ordering in rare earth doped Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystal provides an ideal platform for quantum transport studies and potential applications.

cond-mat.mtrl-sci↗

arXiv2023

Superconducting Diode Effect -- Fundamental Concepts, Material Aspects, and Device Prospects

Superconducting diode effect, in analogy to the nonreciprocal resistive charge transport in semiconducting diode, is a nonreciprocity of dissipationless supercurrent. Such an exotic phenomenon originates from intertwining between symmetry-constrained supercurrent transport and intrinsic quantum functionalities of helical/chiral superconductors. In this article, research progress of superconducting diode effect including fundamental concepts, material aspects, device prospects, and theoretical/experimental development is reviewed. First, fundamental mechanisms to cause superconducting diode effect including simultaneous space-inversion and time-reversal symmetry breaking, magnetochiral anisotropy, interplay between spin-orbit interaction energy and the characteristic energy scale of supercurrent carriers, and finite-momentum Cooper pairing are discussed. Second, the progress of superconducting diode effect from theoretical predictions to experimental observations are reviewed. Third, interplay between various system parameters leading to superconducting diode effect with optimal performance is presented. Then, it is explicitly highlighted that nonreciprocity of supercurrent can be characterized either by current-voltage relation obtained from resistive direct-current measurements in the metal-superconductor fluctuation region ($T\approx T_c$) or by current-phase relation and nonreciprocity of superfluid inductance obtained from alternating-current measurements in the superconducting phase ($T<T_c$). Finally, insight into future directions in this active research field is provided with a perspective analysis on intertwining between band-topology and helical superconductivity, which could be useful to steer the engineering of emergent topological superconducting technologies.

cond-mat.supr-con↗

arXiv2022

Quarkonia production in ultra-peripheral PbPb collisions at LHCb

Measurements of coherent charmonium production cross sections together with their ratio in ultra-peripheral PbPb collisions are studied at a nucleon-nucleon centre-of-mass energy of $5.02\,\mathrm{TeV}$, the differential cross-sections are measured as a function of rapidity and transverse momentum, separately. The photo-production of \jpsi mesons at low transverse momentum is studied in peripheral PbPb collisions, which confirms coherent \jpsi production in hadronic collisions. These latest results significantly improve previous measurements and are compared with some theoretical predictions.

hep-ex↗

arXiv2022

HMM-V: Heterogeneous Memory Management for Virtualization

The memory demand of virtual machines (VMs) is increasing, while DRAM has limited capacity and high power consumption. Non-volatile memory (NVM) is an alternative to DRAM, but it has high latency and low bandwidth. We observe that the VM with heterogeneous memory may incur up to a $1.5\times$ slowdown compared to a DRAM VM, if not managed well. However, none of the state-of-the-art heterogeneous memory management designs are customized for virtualization on a real system. In this paper, we propose HMM-V, a Heterogeneous Memory Management system for Virtualization. HMM-V automatically determines page hotness and migrates pages between DRAM and NVM to achieve performance close to the DRAM system. First, HMM-V tracks memory accesses through page table manipulation, but reduces the cost by leveraging Intel page-modification logging (PML) and a multi-level queue. Second, HMM-V quantifies the ``temperature'' of page and determines the hot set with bucket-sorting. HMM-V then efficiently migrates pages with minimal access pause and handles dirty pages with the assistance of PML. Finally, HMM-V provides pooling management to balance precious DRAM across multiple VMs to maximize utilization and overall performance. HMM-V is implemented on a real system with Intel Optane DC persistent memory. The four-VM co-running results show that HMM-V outperforms NUMA balancing and hardware management (Intel Optane memory mode) by $51\%$ and $31\%$, respectively.

cs.OS↗

arXiv2022

Quarkonia production in (ultra-)peripheral PbPb collisions at LHCb

The cross-sections of coherent \jpsi and \psitwos production in ultra-peripheral PbPb collisions at a nucleon-nucleon center-of-mass energy of $5.02\,\mathrm{TeV}$ are measured using a data sample collected in 2018 at $\lhcb$, and the differential cross-sections are measured separately as a function of transverse momentum and rapidity. The photo-production of \jpsi mesons at low transverse momentum is studied in peripheral PbPb collisions, \jpsi candidates are reconstructed through the prompt decay into \mumu in the rapidity region of $2.0<y<4.5$. These results significantly improve previous measurements and are compared to the latest theoretical predictions.

hep-ex↗

arXiv2022

A Novel Non-Volatile Inverter-based CiM: Continuous Sign Weight Transition and Low Power on-Chip Training

In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully demonstrated, enabling desired continuous weight transition between negative and positive via the programmable threshold voltage (VTH) of ferroelectric field-effect transistors (FeFETs). Compared with commonly used designs with the similar function, 1T1I uniquely achieves pure on-chip-based weight transition at an optimized working current without relying on assistance from off-chip calculation units for signed-weight comparison, facilitating high-speed training at low power consumption. Further improvements in linearity and training speed can be obtained via a two-transistor-one-inverter (2T1I) design. Overall, focusing on energy and time efficiencies, this work provides a valuable design strategy for future FeFET-based computing-in-memory (CiM).

cond-mat.mes-hall↗

arXiv2022

Topological Dirac Spin-Gapless Materials -- New Horizon for Topological Spintronics Without Spin-Orbit Interaction

The existence of chiral edge states, corresponding to the nontrivial bulk-band topology characterized by a non-vanishing topological invariant, and the manipulation of topological transport via chiral edge states promise topological electronic/spintronic device applications. Here we predict the existence, practical realization, topological protection, and topological switching of spin-gapless valley-filtered chiral edge states, representing a novel topological Dirac spin-gapless/half-metal phase in antiferromagnetic honeycomb structures terminated on zigzag edges. We demonstrate that this phenomenon is realizable if a perpendicular (transverse) electric field is applied in zigzag nanoribbons with an antiferromagnetic ordering on the boundary (in the bulk), and the Weber-Fechner type nonlinear behavior is optimizable by a transverse (perpendicular) electric field. The existence of spin-gapless valley-filtered chiral edge states, their correspondence with nontrivial topological character in the bulk, and electric-field-driven switching of their spin-polarization that is accompanied by switching of bulk-band topology promise a new strategy for topological spintronics without spin-orbit interaction.

cond-mat.mes-hall↗

arXiv2022

Deep Learning Workload Scheduling in GPU Datacenters: Taxonomy, Challenges and Vision

Deep learning (DL) shows its prosperity in a wide variety of fields. The development of a DL model is a time-consuming and resource-intensive procedure. Hence, dedicated GPU accelerators have been collectively constructed into a GPU datacenter. An efficient scheduler design for such GPU datacenter is crucially important to reduce the operational cost and improve resource utilization. However, traditional approaches designed for big data or high performance computing workloads can not support DL workloads to fully utilize the GPU resources. Recently, substantial schedulers are proposed to tailor for DL workloads in GPU datacenters. This paper surveys existing research efforts for both training and inference workloads. We primarily present how existing schedulers facilitate the respective workloads from the scheduling objectives and resource consumption features. Finally, we prospect several promising future research directions. More detailed summary with the surveyed paper and code links can be found at our project website: https://github.com/S-Lab-System-Group/Awesome-DL-Scheduling-Papers

cs.DC↗

arXiv2022

Gate-tunable exchange bias effect in FePS3-Fe5GeTe2 van der Waals heterostructures

Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized electrically-controllable EB effects in a vdW antiferromagnetic (AFM)-ferromagnetic (FM) heterostructure, FePS3-Fe5GeTe2. For pristine FePS3-Fe5GeTe2 heterostructures, sizable EB effects can be generated due to the strong interface coupling, which also depend on the thickness of the ferromagnetic layers. By applying a solid protonic gate, the EB effects can be electrically tuned largely by proton intercalations and deintercalations. The EB field reaches up to 23% of the coercive field and the blocking temperature exceeds 50 K at Vg= -3.15 V. The proton intercalations not only tune the average magnetic exchange coupling, but also change the AFM configurations and transform the heterointerface between an uncompensated AFM-FM interface and a compensated AFM-FM interface. These alterations result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step towards vdW heterostructure-based magnetic logic for future low-energy electronics.

cond-mat.mtrl-sci↗

arXiv2022

Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects

In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlapping in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices.

cond-mat.mes-hall↗

arXiv2022

Targeted influence maximization in complex networks

Many real-world applications based on spreading processes in complex networks aim to deliver information to specific target nodes. However, it remains challenging to optimally select a set of spreaders to initiate the spreading process. In this paper, we study the targeted influence maximization problem using a susceptible-infected-recovered (SIR) model as an example. Formulated as a combinatorial optimization, the objective is to identify a given number of spreaders that can maximize the influence over target nodes while minimize the influence over non-target nodes. To find a practical solution to this optimization problem, we develop a theoretical framework based on a message passing process and perform a stability analysis on the equilibrium solution using non-backtracking (NB) matrices. We propose that the spreaders can be selected by imposing optimal perturbation on the equilibrium solution for the subgraph consisting of the target nodes and their multi-step nearest neighbors while avoiding such perturbation on the complement graph that excludes target nodes from the original network. We further introduce a metric, termed targeted collective influence, for each node to identify influential spreaders for targeted spreading processes. The proposed method, validated in both synthetic and real-world networks, outperforms other competing heuristic approaches. Our results provide a framework for analyzing the targeted influence maximization problem and a practical method to identify spreaders in real-world applications.

nlin.AO↗

arXiv2022

Experimental Confirmation of the Universal Law for the Vibrational Density of States of Liquids

An analytical model describing the vibrational phonon density of states (VDOS) of liquids has long been elusive, mainly due to the difficulty in dealing with the imaginary modes dominant in the low-energy region, as described by the instantaneous normal mode (INM) approach. Nevertheless, Zaccone and Baggioli have recently developed such a model based on overdamped Langevin liquid dynamics. The model was proposed to be the universal law for the vibrational density of states of liquids. Distinct from the Debye law, g(ω) ~ ω2, for solids, the universal law for liquids reveals a linear relationship, g(ω) ~ ω, in the low-energy region. The universal law has been successfully verified with computer simulated VDOS for Lennard-Jones liquids. We further confirm this universal law with experimental VDOS measured by inelastic neutron scattering on real liquid systems including water, liquid metal, and polymer liquids. We have applied this model and extracted the effective relaxation rate for the short time dynamics for each liquid. The model has been further evaluated in the predication of the specific heat. The results have been compared with the existing experimental data as well as with values obtained by different approaches.

cond-mat.soft↗

arXiv2022

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

cond-mat.mes-hall↗

arXiv2021

An incompressible Eulerian method for fluid-structure interaction with mixed soft and rigid solids

We present a general simulation approach for incompressible fluid--structure interactions in a fully Eulerian framework using the reference map technique (RMT). The approach is suitable for modeling one or more rigid or finitely-deformable objects or soft objects with rigid components interacting with the fluid and with each other. It is also extended to control the kinematics of structures in fluids. The model is based on our previous Eulerian fluid--soft solver, and generalized to rigid structures by constraining the deformation-rate tensor in a projection framework. Several numerical examples are presented to illustrate the capability of the method.

physics.flu-dyn↗

arXiv2020

Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review

Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: (i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)2Te3 thin films, (ii) four band tight-binding model for graphene with magnetic adatoms, and (iii) two (three) band spinfull tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is intrinsically ferromagnetic. These models cover two-dimensional Dirac materials hosting spinless, spinful and spin-degenerate Dirac points where various mass terms open a band gap and lead to quantum anomalous Hall effect. With emphasize on the topological phase transition driven by ferromagnetic exchange interaction and its interplay with spin-orbit-coupling, we discuss various symmetry constraints on the nature of mass term and the materialization of these models. We hope this study will shed light on the fundamental theoretical perspectives of quantum anomalous Hall materials.

cond-mat.mes-hall↗