arXiv subjects

Xiaojun Wu

Publications and source records attributed to Xiaojun Wu.

126 records · Page 7Linked to original sources

arXiv2017

Segmented Terahertz Electron Accelerator and Manipulator (STEAM)

Acceleration and manipulation of ultrashort electron bunches are the basis behind electron and X-ray devices used for ultrafast, atomic-scale imaging and spectroscopy. Using laser-generated THz drivers enables intrinsic synchronization as well as dramatic gains in field strengths, field gradients and component compactness, leading to shorter electron bunches, higher spatio-temporal resolution and smaller infrastructures. We present a segmented THz electron accelerator and manipulator (STEAM) with extended interaction lengths capable of performing multiple high-field operations on the energy and phase-space of ultrashort bunches with moderate charge. With this single device, powered by few-microjoule, single-cycle, 0.3 THz pulses, we demonstrate record THz-device acceleration of >30 keV, streaking with <10 fs resolution, focusing with >2 kT/m strengths, compression to ~100 fs as well as real-time switching between these modes of operation. The STEAM device demonstrates the feasibility of future THz-based compact electron guns, accelerators, ultrafast electron diffractometers and Free-Electron Lasers with transformative impact.

physics.acc-ph↗

arXiv2017

Single Photon Emission from Plasma Treated 2D Hexagonal Boron Nitride

Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Yet, synthesis of color centers that act as single photon emitters which are suitable for on-chip applications is still beyond reach. Here, we report a number of plasma and thermal annealing methods for the fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprised of Ar plasma etching and subsequent annealing in Ar is highly robust, and yields a seven-fold increase in the concentration of emitters in hBN. The initial plasma etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature and have an emission energy distribution that is red-shifted relative to that of pristine hBN. An analysis of emitters fabricated by a range of plasma and annealing treatments, combined with a theoretical investigation of point defects in hBN indicates that single photon emitters characterized by a high degree of photostability and emission wavelengths greater than ~700 nm are associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters by annealing hBN in an oxidative atmosphere. Our findings advance present understanding of the structure of quantum emitter in hBN and enhance the nanofabrication toolkit that is needed to realize integrated quantum nanophotonics based on 2D materials.

cond-mat.mtrl-sci↗

arXiv2016

Terahertz-driven, all-optical electron gun

Ultrashort electron beams with narrow energy spread, high charge, and low jitter are essential for resolving phase transitions in metals, semiconductors, and molecular crystals. These semirelativistic beams, produced by phototriggered electron guns, are also injected into accelerators for x-ray light sources. The achievable resolution of these time-resolved electron diffraction or x-ray experiments has been hindered by surface field and timing jitter limitations in conventional RF guns, which thus far are <200 MV/m and >96 fs, respectively. A gun driven by optically-generated single-cycle THz pulses provides a practical solution to enable not only GV/m surface fields but also absolute timing stability, since the pulses are generated by the same laser as the phototrigger. Here, we demonstrate an all-optical THz gun yielding peak electron energies approaching 1 keV, accelerated by 300 MV/m THz fields in a novel micron-scale waveguide structure. We also achieve quasimonoenergetic, sub-keV bunches with 32 fC of charge, which can already be used for time-resolved low-energy electron diffraction. Such ultracompact, easy to implement guns driven by intrinsically synchronized THz pulses that are pumped by an amplified arm of the already present photoinjector laser provide a new tool with potential to transform accelerator based science.

physics.acc-ph↗

arXiv2016

Effective Path Towards Relativistic Transients at Millimeter Wavelengths

We refine the method towards extraction of sub-cycle transients in the 0.1-1 THz frequency (mm-wavelength) range from optical rectification in lithium niobate using tilted pulse fronts. Our scheme exploits previously unexplored spatio-temporal shaping of the pump pulses, resulting in highly efficient and near diffraction-limited sub-THz transients reaching 0.2 GV/m electric field strengths in free-space using only mJ-level optical ps-pulses. We address experimentally and theoretically the means to producing above-GV/m relativistic sub-THz transients with proper beam confinement and under moderate pumping conditions, thereby bringing widespread access to strong-field and nonlinear terahertz applications and devices.

physics.optics↗

arXiv2016

Half-percent terahertz generation efficiency from cryogenically cooled lithium niobate pumped by Ti:sapphire laser pulses

We obtained an optical-to-terahertz (THz) energy conversion efficiency of 0.5% using the tilted-pulse-front technique in lithium niobate at a cryogenically cooled temperature of 100 K pumped by amplified Ti:sapphire laser pulses with ~150 fs pulse duration at 800 nm wavelength. Compared with the optimized conversion efficiency of 0.18% achieved at room temperature, we achieved more than 2.5 times enhancement in conversion efficiency upon cryogenically cooling the crystal due to reduction of THz absorption. Further improvements to the conversion efficiency can be made by optimizing the out-coupling of the THz radiation, transportation of pump energy and by further decreasing the THz absorption in the lithium niobate crystal.

physics.optics↗

arXiv2015

Is phosphorene with intrinsic defect still an ideal anode material?

The diffusion of Li in electrode materials is key factor to charging/discharging rate capacity of Li-ion battery (LIB). Recently, two-dimensional phosphorene has been proposed as a very promising electrode material due to its ultrafast and directional lithium diffusion, as well as large energy capacity. Here, on the basis of density functional theory, we report that the intrinsic point defects, including vacancy and stone-wales defects, will block the directional ultrafast diffusion of lithium in phosphorene. On the defect-free phosphorene, diffusion of Li along the zigzag lattice direction is 1.6 billion times faster than along the armchair lattice direction, and 260 times faster than that in graphite. By introducing intrinsic vacancy and stone-wales defect, the diffusion energy barrier of Li along zigzag lattice direction increases sharply to the range of 0.17 ~ 0.49 eV, which block the ultrafast migration of lithium along the zigzag lattice direction. Meanwhile, the open circuit voltage increases with the emergence of defects, which is not suitable for anode materials. In addition, the formation energies of defects in phosphorene are much lower than those in graphene and silicene sheet, therefore, it is highly demanded to generate defect-free phosphorene for LIB applications.

cond-mat.mtrl-sci↗

arXiv2014

Terahertz Generation in Lithium Niobate Driven by Ti:Sapphire Laser Pulses and its Limitations

We experimentally investigate the limits to 800 nm-to-terahertz (THz) energy conversion in lithium niobate at room temperature driven by amplified Ti:Sapphire laser pulses with tilted-pulse-front. The influence of the pump central wavelength, pulse duration, and fluence on THz generation is studied. We achieved a high peak efficiency of 0.12% using transform limited 150 fs pulses and observed saturation of the optical to THz conversion efficiency at a fluence of 15 mJ/cm2. We experimentally identify two main limitations for the scaling of optical-to-THz conversion efficiencies: (i) the large spectral broadening of the optical pump spectrum in combination with large angular dispersion of the tilted-pulse-front and (ii) free-carrier absorption of THz radiation due to multi-photon absorption of the 800 nm radiation.

physics.optics↗

arXiv2014

Limitations to THz generation by optical rectification using tilted pulse fronts

Terahertz (THz) generation by optical rectification (OR) using tilted-pulse-fronts is studied. One-dimensional (1-D) and 2-D spatial models, which simultaneously account for (i) the nonlinear coupled interaction of the THz and optical radiation, (ii) angular and material dispersion, (iii) absorption, iv) self-phase modulation and (v) stimulated Raman scattering are presented. We numerically show that the large experimentally observed cascaded frequency down-shift and spectral broadening (cascading effects) of the optical pump pulse is a direct consequence of THz generation. In the presence of this large spectral broadening, the phase mismatch due to angular dispersion is greatly enhanced. Consequently, this cascading effect in conjunction with angular dispersion is shown to be the strongest limitation to THz generation in lithium niobate for pumping at 1 micron. It is seen that the exclusion of these cascading effects in modeling OR, leads to a significant overestimation of the optical-to-THz conversion efficiency. The simulation results are supported by experiments.

physics.optics↗

arXiv2014

Phosphorene nanoribbons, nanotubes and van der Waals multilayers

We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorene nanotubes, multilayer phosphorene, and heterobilayers of phosphorene and two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that zigzag phosphorene nanoribbons (z-PNRs) are metals, regardless of the ribbon width while armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps are insensitive to variation of the ribbon width. We find that tensile compression (or expansion) strains can reduce (or increase) the bandgap of the a-PNRs while an in-plane electric field can significantly reduce the bandgap of a-PNRs, leading to the semiconductor-to-metal transition beyond certain electric field. For single-walled phosphorene nanotubes (SW-PNTs), both armchair and zigzag nanotubes are semiconductors with direct bandgaps. With either tensile strains or transverse electric field, similar behavior of bandgap modulation can arise as that for a-PNRs. It is known that multilayer phosphorene sheets are semiconductors with their bandgaps decreasing with increasing the number of multilayers. In the presence of a vertical electric field, the bandgaps of multilayer phosphorene sheets decrease with increasing the electric field, and the bandgap modulation is more significant with more layers. Lastly, heterobilayers of phosporene with a TMDC (MoS2 or WS2) monolayer are still semiconductors while their bandgaps can be reduced by applying a vertical electric field as well.

cond-mat.mes-hall↗

arXiv2014

Tuning Electronic and Magnetic Properties of Early Transition Metal Dichalcogenides via Tensile Strain

We have performed a systematic first-principles study of the effect of tensile strains on the electronic properties of early transition-metal dichalcogenide (TMDC) monolayers MX2 (M = Sc, Ti, Zr, Hf, Ta, Cr; X = S, Se, and Te). Our density-functional theory (DFT) calculations suggest that the tensile strain can significantly affect the electronic properties of many early TMDCs in general and the electronic bandgap in particular. For group IVB TMDCs (TiX2, ZrX2, HfX2), the bandgap increases with the tensile strain, but for ZrX2 and HfX2 (X=S, Se), the bandgap starts to decrease at strain 6% to 8%. For the group-VB TMDCs (TaX2), the tensile strain can either induce the ferromagnetism or enhance the existing ferromagnetism. For the group-VIB TMDCs (CrX2) the direct-to-indirect bandgap transition is seen upon application of the tensile strain, except CrTe2 whose bandgap decreases with the tensile strain even though the direct character of its bandgap is retained. Lastly, for the group-IIIB TMDCs (ScX2) in the T metallic phase, we find that the tensile strain has little effect on their electronic and magnetic properties. Our study suggests that strain engineering is an effective approach to modify electronic and magnetic properties of most early TMDC monolayers, thereby opening an alternative way for future optoelectronic and spintronic applications.

cond-mat.mes-hall↗

arXiv2013

MoS2/MX2 heterobilayers: Bandgap engineering via tensile strain or external electrical field

We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W; X=S, Se, all heterobilayers show semiconducting characteristics with an indirect bandgap with the exception of the WSe2/MoS2 heterobilayer which retains the direct-band-gap character of the constituent monolayer. For M = Fe, V; X = S, Se, the MX2/MoS2 heterobilayers exhibit metallic characters. Particular attention of this study has been focused on engineering bandgap of the TMD heterobilayer materials via application of either a tensile strain or an external electric field. We find that with increasing either the biaxial or uniaxial tensile strain, the MX2/MoS2 (M=Mo, Cr, W; X=S, Se) heterobilayers can undergo a semiconductor-to-metal transition. For the WSe2/MoS2 heterobilayer, a direct-to-indirect bandgap transition may occur beyond a critical biaxial or uniaxial strain. For M (=Fe, V) and X (=S, Se), the magnetic moments of both metal and chalcogen atoms are enhanced when the MX2/MoS2 heterobilayers are under a biaxial tensile strain. Moreover, the bandgap of MX2/MoS2 (M=Mo, Cr, W; X=S, Se) heterobilayers can be reduced by the electric field. For two heterobilayers MSe2/MoS2 (M=Mo, Cr), PBE calculations suggest that the indirect-to-direct bandgap transition may occur under an external electric field. The transition is attributed to the enhanced spontaneous polarization. The tunable bandgaps in general and possible indirect-direct bandgap transitions due to tensile strain or external electric field endow the TMD heterobilayer materials a viable candidate for optoelectronic applications.

cond-mat.mes-hall↗

arXiv2013

Control of Spin in La(Mn,Zn)AsO Alloy by Carrier Doping

The control of spin without magnetic field is one of challenges in developing spintronic devices. In an attempt to solve this problem, we proposed a novel hypothetic LaMn0.5Zn0.5AsO alloy from two experimentally synthesized rare earth element transition metal arsenide oxides, i.e. LaMnAsO and LaZnAsO. On the basis of the first-principles calculations with strong-correlated correction, we found that the LaMn0.5Zn0.5AsO alloy is an antiferromagnetic semiconductor at ground state, while bipolar magnetic semiconductor at ferromagnetic state. Both electron and hole doping in the LaMn0.5Zn0.5AsO alloy induces the transition from antiferromagnetic to ferromagnetic, as well as semiconductor to half metal. In particular, the spin-polarization direction is switchable depending on the doped carrier's type. As carrier doping can be realized easily in experiment by applying a gate voltage, the LaMn0.5Zn0.5AsO alloy stands for a promising spintronic material to generate and control the spin-polarized carriers with electric field.

cond-mat.mtrl-sci↗

arXiv2013

Random Drift Particle Swarm Optimization

The random drift particle swarm optimization (RDPSO) algorithm, inspired by the free electron model in metal conductors placed in an external electric field, is presented, systematically analyzed and empirically studied in this paper. The free electron model considers that electrons have both a thermal and a drift motion in a conductor that is placed in an external electric field. The motivation of the RDPSO algorithm is described first, and the velocity equation of the particle is designed by simulating the thermal motion as well as the drift motion of the electrons, both of which lead the electrons to a location with minimum potential energy in the external electric field. Then, a comprehensive analysis of the algorithm is made, in order to provide a deep insight into how the RDPSO algorithm works. It involves a theoretical analysis and the simulation of the stochastic dynamical behavior of a single particle in the RDPSO algorithm. The search behavior of the algorithm itself is also investigated in detail, by analyzing the interaction between the particles. Some variants of the RDPSO algorithm are proposed by incorporating different random velocity components with different neighborhood topologies. Finally, empirical studies on the RDPSO algorithm are performed by using a set of benchmark functions from the CEC2005 benchmark suite. Based on the theoretical analysis of the particle's behavior, two methods of controlling the algorithmic parameters are employed, followed by an experimental analysis on how to select the parameter values, in order to obtain a good overall performance of the RDPSO algorithm and its variants in real-world applications. A further performance comparison between the RDPSO algorithms and other variants of PSO is made to prove the efficiency of the RDPSO algorithms.

cs.AI↗

arXiv2012

Bipolar Magnetic Semiconductors: A New Class of Spintronics Materials

Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which completely spin-polarized currents with reversible spin polarization can be created and controlled simply by applying a gate voltage. This is a result of the unique electronic structure of BMS, where the valence and conduction bands possess opposite spin polarization when approaching the Fermi level. Our band structure and spin-polarized electronic transport calculations on semi-hydrogenated single-walled carbon nanotubes confirm the existence of BMS materials and demonstrate the electrical control of spin-polarization in them.

cond-mat.mtrl-sci↗

arXiv2011

Tunable band gap of graphane nanoribbons under uniaxial elastic strain: a first-principles study

In this Letter, we investigate the strain-induced band-gap modulation of both armchair and zigzag graphane nanoribbons based on the first-principles calculations. Within the elastic range, the band gap changes linearly with the uniaxial strain, where the band-gap of graphane nanoribbonsis more sensitive to compressive than tensile deformation. The band-gap deformation mainly originates from the shift of valence band edge of graphane nanoribbons under stain. Our results imply the great potential of graphane nanoribbons in the pressure sensor and optical electronics applications.

cond-mat.mtrl-sci↗

arXiv2011

Predicting Two-Dimensional Boron-Carbon Compounds by the Global Optimization Method

We adopt a global optimization method to predict two-dimensional (2D) nanostructures through the particle-swarm optimization (PSO) algorithm. By performing PSO simulations, we predict new stable structures of 2D boron-carbon (B-C) compounds for a wide range of boron concentrations. Our calculations show that: (1) All 2D B-C compounds are metallic except for BC3 which is a magic case where the isolation of carbon six-membered ring by boron atoms results in a semiconducting behavior. (2) For C-rich B-C compounds, the most stable 2D structures can be viewed as boron doped graphene structures, where boron atoms typically form 1D zigzag chains except for BC3 in which boron atoms are uniformly distributed. (3) The most stable 2D structure of BC has alternative carbon and boron ribbons with strong in-between B-C bonds, which possesses a high thermal stability above 2000K. (4) For B-rich 2D B-C compounds, there is a novel planar-tetracoordinate carbon motif with an approximate C2v symmetry.

cond-mat.mtrl-sci↗

arXiv2008

Half Metallicity in Hybrid BCN Nanoribbons

We report a first-principles electronic-structure calculation on C and BN hybrid zigzag nanoribbons. We find that half-metallicity can arise in the hybrid nanoribbons even though stand-alone C or BN nanoribbon possesses a finite band gap. This unexpected half-metallicity in the hybrid nanos-tructures stems from a competition between the charge and spin polarizations, as well as from the pi orbital hybridization between C and BN. Our results point out a possibility of making spintronic devices solely based on nanoribbons and a new way of designing metal-free half metals.

cond-mat.mtrl-sci↗

arXiv2007

Hydrogen storage in pillared Li-dispersed boron carbide nanotubes

Ab initio density-functional theory study suggests that pillared Li-dispersed boron carbide nanotubes is capable of storing hydrogen with a mass density higher than 6.0 weight% and a volumetric density higher than 45 g/L. The boron substitution in carbon nanotube greatly enhances the binding energy of Li atom to the nanotube, and this binding energy (~ 2.7 eV) is greater than the cohesive energy of lithium metal (~1.7 eV), preventing lithium from aggregation (or segregation) at high lithium doping concentration. The adsorption energy of hydrogen on the Li-dispersed boron carbide nanotube is in the range of 10 ~24 kJ/mol, suitable for reversible H2 adsorption/desorption at room temperature and near ambient pressure.

cond-mat.mtrl-sci↗