arXiv subjects

Tingxin Li

Publications and source records attributed to Tingxin Li.

At least 19 recordsLinked to original sources

arXiv2026

Chiral superconductors and competing states across a Lifshitz transition in rhombohedral pentalayer graphene

Rhombohedral multilayer graphene hosts a distinctive low-energy electronic structure in which strong Coulomb interactions and nontrivial quantum geometry intertwine to generate exotic quantum states. Recent experiments reported signatures of chiral superconductivity in electron-doped rhombohedral multilayer graphene within the spin- and valley-polarized regime. Here we map the normal-state fermiology surrounding chiral superconductivity in rhombohedral pentalayer graphene. Quantum oscillation measurements reveal an electrically controlled Lifshitz transition between a simply-connected circular quarter-metal Fermi surface and an annular quarter-metal Fermi surface. The Lifshitz boundary itself shifts with perpendicular magnetic field, consistent with the strongly momentum-dependent orbital magnetic moment of the low-energy band. Approaching the transition from either side, the electron effective mass becomes strongly enhanced, implying the formation of a nearly dispersionless band bottom and a strongly reduced kinetic-energy scale. This singular electronic structure produces a regime of exceptionally strong instability in which chiral superconductivity competes with Wigner crystalline phases and reentrant quantum Hall states. In particular, two superconducting regions with signatures of orbital time-reversal-symmetry breaking lie on opposite sides of the Lifshitz boundary and have comparable transition temperatures, yet the annular-side state is suppressed by a substantially smaller perpendicular magnetic field. Our calculation finds comparable chiral pairing tendencies on the two parent Fermi surfaces while producing a much lower orbital-Zeeman pair-breaking scale and an additional finite-momentum pairing tendency for the annular state. These results identify Fermi-surface topology as a key control parameter for chiral superconductivity in rhombohedral graphene.

cond-mat.mes-hall↗

arXiv2026

Signatures of unconventional superconductivity near reentrant and fractional quantum anomalous Hall insulators

Two-dimensional moiré Chern bands provide an exceptional platform for exploring a variety of many-body quantum phases at zero magnetic field within a lattice system. One particular intriguing possibility is that flat Chern bands can, in principle, support exotic superconducting phases together with fractional topological phases. Here, we report the observation of integer and fractional quantum anomalous Hall effects, the reentrant quantum anomalous Hall effect, and superconductivity within the first moiré Chern band of twisted bilayer MoTe2. The superconducting phase emerges from a normal state exhibiting anomalous Hall effects. Our results present the first example of superconductivity emerging within a flat Chern band that simultaneously hosts fractional quantum anomalous effects, a phenomenon never observed in any other systems. Our work expands the understanding of emergent quantum phenomena in moiré Chern bands, and offers a nearly ideal platform for engineering Majorana and parafermion zero modes in gate-controlled hybrid devices.

cond-mat.mes-hall↗

arXiv2026

Stacking-order-dependent electronic properties of MoTe2/WSe2 moiré bilayers

Transition metal dichalcogenide (TMD) moiré bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved optical second harmonic generation (SHG) is the most used technique for stacking order characterization but unverified for most heterobilayers. Here we calibrate the optical SHG for angle-aligned MoTe2/WSe2 bilayers by the scanning transmission electron microscopy (STEM). We directly compare the transport and magnetic properties and the electronic phase diagram for two distinct stacking orders. With the calibrated stacking order assignment, we clarify the interpretation of earlier results, including the nature of the Chern insulator, mechanism of an electric-field-tuned metal-insulator transition at half band filling, and the Kondo lattice physics. Our work provides a consistent picture of the relation between the stacking order and the electronic properties of MoTe2/WSe2 moiré bilayers.

cond-mat.mes-hall↗

arXiv2026

Multiple Superconducting Phases in Rhombohedral Heptalayer Graphene

Crystalline rhombohedral multilayer graphene (RMG) has emerged as an ideal platform for studying unconventional superconductivity. Here, we report the observation of superconductivity in moiréless rhombohedral heptalayer graphene (RHG) at zero magnetic field. The superconducting phases emerge at low displacement electric fields (|D| < 0.2 V/nm) and are symmetrically distributed about D = 0, with one robust state exhibiting zero resistance and two weaker superconducting features. Comparisons with rhombohedral pentalayer graphene (RPG) reveal distinct perpendicular magnetic-field responses, and quantum oscillation measurements indicate that superconductivity in RHG arises from a half-metallic normal state. These results highlight the strong dependence of superconductivity on layer number and electronic structure in RMG systems and provide new insights into its microscopic origin.

cond-mat.mes-hall↗

arXiv2026

Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices

Moiré superlattices based on rhombohedral multilayer graphene have emerged as a highly tunable platform for engineering correlated topological phases. Here, we systematically investigate the transport properties of the hole-doped side in rhombohedral tetralayer graphene/ hexagonal boron nitride (hBN) moiré superlattices across a range of twist angles and alignment orientations. Notably, we observed multiple high-Chern-number Chern insulators, including the previously reported integer Chern insulator with Chern number C = -4 at moiré filling factor v = -1 and newly discovered symmetry-broken Chern insulating states with C = +3, $\pm$2, $\pm$1 at fractional moiré fillings of v = -2.5 or -2.6. These Chern insulating states emerge in both hBN alignment, but exhibit a sensitive moiré wavelength dependence. Our findings demonstrate the exceptional tunability of these high-Chern-number states via moiré wavelength, displacement electric field and external magnetic field, underscoring the distinct topological landscape realized in hole-doped RTG/hBN moiré superlattices.

cond-mat.mes-hall↗

arXiv2026

Twist-angle evolution from valley-polarized fractional topological phases to valley-degenerate superconductivity in twisted bilayer MoTe2

Moiré superlattices formed by semiconducting transition metal dichalcogenides (TMDs) provide a highly tunable platform for investigating strongly correlated and topological quantum phases. As a prototypical example, twisted bilayer MoTe2 (tMoTe2) has been shown to host fractional topological phases, such as zero-field fractional Chern insulators (FCIs) exhibiting fractional quantum anomalous Hall (FQAH) effects. However, how these correlated topological phases evolve with twist angle and compete with other quantum phases in tMoTe2 remains largely unexplored. Here we report a systematic transport study of twist-angle-dependent phase diagrams in tMoTe2 across a range of 3.8°-5.78°, revealing an evolution from fractionalized states of matter with spontaneous valley polarization to valley-degenerate superconductivity. At relatively small twist angles, partially-filled Chern bands of tMoTe2 host FQAH states following the Jain sequence, together with signatures of an anomalous composite Fermi liquid at moiré hole filling factor νh = 1/2. Increasing twist angle progressively suppresses fractional topological phases and reconstructs the half-filled Chern band into symmetry-breaking integer Chern insulating states. At νh = 1, we observe a transition from robust integer quantum anomalous Hall (IQAH) insulators at small angles to displacement-field-tuned, topologically trivial correlated insulators at larger angles. Remarkably, at a twist angle of 5.78°, superconductivity emerges adjacent to the correlated insulating phase, with a phase diagram closely resembling that recently reported in twisted bilayer WSe2 (tWSe2). Our results uncover a unified twist-angle-driven phase evolution linking fractional topology, symmetry breaking, magnetic order, and superconductivity, providing new insight into the emergent quantum phenomena in moiré systems.

cond-mat.mes-hall↗

arXiv2026

Emergence of a symmetry-broken Chern insulator near a moiré Kondo breakdown

Moiré semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer is prepared in a Mott insulating state supporting a lattice of local magnetic moments and the other layer in a metallic state supporting itinerant carriers. The artificial Kondo lattice enables the exploration of exotic states of matter near a continuously tunable Kondo breakdown. Here we report the emergence of a symmetry-broken Chern insulator at a moiré hole filling factor 4/3 in angle-aligned MoTe2/WSe2 moiré bilayers, which realize a chiral Kondo lattice. The symmetry-broken Chern insulator, which exhibits integer quantized Hall conductance at a fractional moiré filling, breaks the translational symmetry of the lattice spontaneously; it also appears only near a magnetic field-induced Kondo breakdown in the mixed-valence regime of the material. We further demonstrate that the magnetic field required to induce the Kondo breakdown and to stabilize the symmetry-broken Chern insulator is twist angle dependent. The results present new opportunities for exploring the subtle interplay between topology and Kondo interactions in moiré semiconductors.

cond-mat.mes-hall↗

arXiv2026

Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2

Moiré semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moiré potential. However, limited interlayer coupling strength and the lack of efficient tuning methods hinder further exploration of correlated phenomena in moiré semiconductors. Here we introduce a cryogenic dual-gated diamond-anvil platform using helium as a pressure medium, enabling reversible hydrostatic tuning together with magneto-optical spectroscopy in twisted bilayer WSe2. Pressure enhances the moiré potential, redshifts excitons, and stabilizes Stoner ferromagnetism otherwise absent at a 3.1-degree twist. Simultaneously, the half-filled C = 1 Chern insulating state strengthens, exhibiting a reduced saturation field. Moreover, we observe a topological phase transition from a Chern insulator to a Mott insulator at around 2 GPa. First-principles calculations reveal that a Gamma-to-K valence-band-maximum switching drives this transition by converting an Ising-like topological K-valley miniband into a spin-degenerate trivial Gamma miniband. Our findings demonstrate hydrostatic pressure as a powerful, continuous control axis for correlated magnetism and topological band engineering in moiré materials.

cond-mat.mtrl-sci↗

arXiv2026

Electric-field-tuned consecutive topological phase transitions between distinct correlated insulators in moire MoTe2/WSe2 heterobilayer

Consecutive topological phase transitions (TPTs) between strongly correlated electronic phases that differ simultaneously in symmetry breaking and topological order are of fundamental interest in condensed matter physics, yet are rarely realized experimentally. We report two consecutive electric-field-driven TPTs at half filling (nu = 1) in angle-aligned MoTe2/WSe2 moire heterobilayers. With increasing out-of-plane displacement field, a geometrically frustrated Mott insulator evolves into a ferromagnetic quantum anomalous Hall (QAH) Mott insulator, i.e., a spin-polarized topological Mott insulator without an observable charge-gap closure, and subsequently into an antiferromagnetic, valley-coherent Mott insulator (VC-AFM) accompanied by a continuous charge-gap collapse and the emergence of a critical metallic state. Layer-resolved magnetic circular dichroism (MCD), magneto-transport, and compressibility measurements jointly determine the phase diagram. The high-field evolution of the antiferromagnetic state reveals a metamagnetic-like transition at a critical field B*, above which a Chern insulating transport response reappears. Our results establish the MoTe2/WSe2 moire platform as a tunable realization of an extended Kane-Mele-Hubbard model hosting sequential correlation-topology-intertwined transitions.

cond-mat.str-el↗

arXiv2025

Moiré-modulated $Γ$ valley in twisted bilayer and twisted double-bilayer MoTe$_2$

Twisted MoTe$_2$ hosts intriguing correlated quantum phenomena including the fractional quantum anomalous Hall effect in twisted bilayer (t-BL) MoTe$_2$ near 3.7$^\circ$, which is sensitive to the twist angle and moiré superlattices. Here, we directly visualize the twist-angle-modulated electronic structure of t-BL and twisted double-bilayer (t-DBL) near this critical angle. We find that the moiré superlattice not only modifies the relative energy between $Γ$ and K valleys in t-BL MoTe$_2$, but also strongly reconstructs the $Γ$ valley for both t-BL and t-DBL. Specifically, the deep $p_z$-derived band at $Γ$ exhibits a distinct splitting that systematically varies with increasing twist angle. Theoretical analysis suggests that this modulation arises from the twist-angle-dependent lattice relaxation, especially interfacial corrugations. Our work directly visualizes the moiré-modulated electronic structure and provides key spectroscopic information of lattice relaxation and interlayer interactions underlying the physics of twisted MoTe$_2$.

cond-mat.str-el↗

arXiv2025

From fractional Chern insulators to topological electronic crystals in moiré MoTe2: quantum geometry tuning via remote layer

The quantum geometry of Bloch wavefunctions,encoded in the Berry curvature and quantum metric, is believed to be a decisive ingredient in stabilizing fractional quantum anomalous Hall (FQAH) effect(i.e., fractional Chern insulator, FCI, at zero magnetic field), against competing symmetry-breaking phases.A direct experimental demonstration of quantum geometry-driven switching between distinct correlated topological phases, however, has been lacking. Here, we report experimental evidence of such a switch in a high-quality 3.7 twisted MoTe2 (tMoTe2) device consisting of both A-A bilayer and A-AB trilayer regions. While composite Fermi liquid CFL/FQAH phases are established in A-A tMoTe2,the A-AB region-effectively an A-A moire bilayer proximitized by a remote B layer-develops a series of topological electronic crystal (TEC, also referred to as generalized QAH crystal, QAHC) states with integer quantized Hall conductance at commensurate fractional fillings v=1/2, 2/3, and an incommensurate filling factor v=0.53.The electrostatic phase diagram is mapped out by combined transport and optical measurements, showing that these TEC states emerge within the first moir'e valence band prior to any charge transfer to the B layer. Exact diagonalization (ED) incorporating the remote-layer-induced intralayer potential demonstrates a transition from a CFL-like manifold in the A-A limit to a Chern number C=1 ground-state consistent with a TEC at v=1/2 , accompanied by the further breakdown of ideal band geometry. Our results provide experimental evidence of quantum geometry-tuned competition between FQAH/CFL and TEC phases in a moiré Chern band and pave the way for further exploring correlation-driven topological phenomena by tuning quantum geometry.

cond-mat.mes-hall↗

arXiv2025

Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices

Two-dimensional moiré superlattices have been extensively studied, and a variety of correlated phenomena have been observed. However, their lower-dimensional counterpart, one-dimensional (1D) moiré superlattices, remain largely unexplored. Electrons in 1D are generally described by Luttinger liquid theory, with universal scaling relations depending only on the Luttinger parameter g. In particular, at half-filling, Umklapp scattering plays a crucial role, as it can significantly change the conductance-temperature scaling relation and lead to Mott insulators. However, this prediction has never been observed since doping an empty band to half-filling was extremely difficult. Here, we show that the marriage of moiré superlattices and 1D electrons makes it possible to study the Luttinger liquid in an exceptionally wide filling region simply by electrical gating. We perform transport measurements on 1D moiré superlattices of carbon nanotubes on hexagonal boron nitride (hBN) substrates, and observe correlated insulating states at 1/4 and 1/2 fillings of the superlattice mini-band, where Umklapp scattering becomes dominant. We also observe a T-linear conductance at these commensurate fillings over a range of temperatures. Strikingly, the T-linear conductance leads to a strongly suppressed Luttinger parameter, suggesting a state of extreme correlation.

cond-mat.str-el↗

arXiv2025

Stacking-orientation and twist-angle control on integer and fractional Chern insulators in moiré rhombohedral graphene

Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum phenomena arising from the interplay between electron correlations and nontrivial topology. However, the microscopic mechanism governing the emergence of both the integer and fractional Chern insulator states in this system remains an open question. In this work, we systematically investigate the electrical transport properties of RMG/hBN moiré devices with controlled alignment orientations and twist angles. We demonstrate that alignment orientation strongly modulates correlated phenomena in the moiré-proximal regime, while having negligible influence on the formation of integer and fractional Chern insulators in the moiré-distant regime. Instead, the moiré periodicity, tuned by the twist angle, serves as the key parameter controlling the stability of these correlated topological states in the moiré-distant regime. Furthermore, in the moiré-proximal regime of one specific alignment, we observe anomalous Hall effect and a variety of competing phases near ν = 1, including integer Chern insulator states, extended Chern insulator states, and trivial insulators, whose stability is highly sensitive to both the applied displacement electric field and magnetic field. Our results underscore the critical role of stacking-alignment and twist-angle engineering in exploring novel quantum states based on rhombohedral-stacked multilayer graphene moiré systems.

cond-mat.mes-hall↗

arXiv2025

Atomically-resolved exciton emission from single defects in MoS$_2$

Understanding how atomic defects shape the nanoscale optical properties of two-dimensional (2D) semiconductors is essential for advancing quantum technologies and optoelectronics. Using scanning tunneling spectroscopy (STS) and luminescence (STML), we correlate the atomic structure and optical fingerprints of individual defects in monolayer MoS$_2$. A bilayer of hexagonal boron nitride (hBN) effectively decouples MoS$_2$ from the graphene substrate, increasing its band gap and extending the defect charge state lifetime. This enables the observation of sharp STML emission lines from MoS$_2$ excitons and trions exhibiting nanoscale sensitivity to local potential fluctuations. We identify the optical signatures of common point defects in MoS$_2$: sulfur vacancies (Vac$_\text{S}^-$), oxygen substitutions (O$_\text{S}$), and negatively charged carbon-hydrogen complexes (CH$_\text{S}^-$). While Vac$_\text{S}^-$ and O$_\text{S}$ only suppress pristine excitonic emission, CH$_\text{S}^-$ generate defect-bound exciton complexes ($A^-X$) about 200\,meV below the MoS$_2$ exciton. Sub-nanometer-resolved STML maps reveal large spectral shifts near charged defects, concurrent with the local band bending expected for band-to-defect optical transitions. These results establish an atomically precise correlation between structure, electronic states, and optical response, enabling deterministic engineering of quantum emitters in 2D materials.

cond-mat.mtrl-sci↗

arXiv2025

Evidence of competing ground states between fractional Chern insulator and antiferromagnetism in moiré MoTe2

Two-dimensional moire materials present unprecedented opportunities to explore quantum phases of matter arising from the interplay of band topology and strong correlations.One of the most striking examples is the recent observation of fractional quantum anomalous Hall (FQAH) effect in twisted bilayer MoTe$_2$ (tMoTe2) with relatively large twist angles(~3.7deg-3.9deg). The electronic ground states are usually expected to be sensitive to the twist angle, as the twist angle determines the electron bandwidth and correlation strength in the moire system. Here, we report the observation of unexpected competing magnetic ground states in tMoTe2 moire superlattice, on which balance can be tipped by both twist angle and electric field (E). Specifically, we observed anomalous antiferromagnetic (AFM) ground states with zero Hall resistance at both v_h=1 and 2/3, at intermediate twist angles ~3deg. The AFM orders are suppressed by applying vertical E, and emergent ferromagnetism accompanied by integer Chern insulator (ICI) or fractional Chern insulator (FCI) states are observed near the critical E (E_c) of moire superlattice symmetry transition. Our results demonstrate tMoTe2 as a fascinating platform for exploring unexpected correlated phases with nontrivial topology and fractional excitations and point to electric-field-controlled ultralow-power spin-valleytronic devices.

cond-mat.mes-hall↗

arXiv2025

Chiral superconductivity from spin polarized Chern band in twisted MoTe$_2$

Superconductivity has been observed in twisted MoTe2 within the anomalous Hall metal parent state. Key signatures-including a fully spin/valley polarized normal state, anomalous Hall resistivity hysteresis, superconducting phase adjacent to the fractional Chern insulating state and a narrow superconducting dome at zero gating field-collectively indicate chiral superconductivity driven by intravalley pairing of electrons. Within the Kohn-Luttinger mechanism, we compute the superconducting phase diagram via random phase approximation, incorporating Coulomb repulsion in a realistic continuum model. Our results identify a dominant intravalley pairing with a narrow superconducting dome of p+ip type at zero gate field. This chiral phase contrasts sharply with the much weaker time-reversal-symmetric intervalley pairing at finite gating field. Our work highlights the role of band topology in achieving robust topological superconductivity, and supports the chiral and topological nature of the superconductivity observed in twisted MoTe2.

cond-mat.supr-con↗

arXiv2025

Imaging moiré flat bands and Wigner molecular crystals in twisted bilayer MoTe2

Two-dimensional semiconducting moiré materials have emerged as a highly tunable platform for exploring novel quantum phenomena. Recently, tMoTe2 has attracted significant attentions due to the observation of the long-sought fractional quantum anomalous Hall effect. However, a comprehensive microscopic understanding of the tMoTe2 moiré superlattice remains elusive. Here, we report STM/STS studies in dual-gated tMoTe2 moiré devices with twist angles ranging from 2.3 to 3.8 deg. The device consists of two independent back-gates, one enables an ohmic contact for tMoTe2, while the other fine-tunes the Fermi level of tMoTe2. This dual-gate control enables direct measurement of the electronic structure in tMoTe2 under varied displacement fields and moiré filling factors, by fine tuning the gate voltage and the tip bias. Our STS spectra and spatial imaging reveal that the low-energy moiré flat bands are predominantly localized in the XM and MX regions of the moiré superlattice. At zero E-field, these bands form a honeycomb lattice with non-trivial topology, whereas an applied E-field drives a transition into two distinct triangular lattices with trivial topology. The spatial distributions align with large-scale first-principle calculations, demonstrating that the topological flat bands arise from the K-valley hybridization between the top and bottom MoTe2 layers. Furthermore, we show that the effective moiré potential depth can be controlled via gate and tip biases. At sufficient potential depths, we observe the emergence of Wigner molecular crystals, transitioning MX triangular lattice into a Kagome lattice at MX moiré filling factor 3. These results elucidate the microscopic origin of topological flat bands in tMoTe2 and demonstrate electric-field control of topology and correlated electronic orders, paving the way to engineer exotic quantum phases in moiré simulators.

cond-mat.mes-hall↗

arXiv2025

Density-dependent spin susceptibility and effective mass in monolayer MoSe2

Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth contacts, enabling reliable ohmic contact down to low electron densities, with a maximum Hall mobility of approximately 22,000 cm2/Vs. Low-temperature transport measurements illustrate metal-insulator transitions, and density-dependent quantum oscillation sequences. Enhanced spin susceptibility and density-dependent effective mass are observed, attributed to interaction effects and valley polarization. These findings establish monolayer MoSe2 as a versatile platform for further exploring interaction-driven quantum states.

cond-mat.mes-hall↗