arXiv · 2602.17349
Emergence of a symmetry-broken Chern insulator near a moir\'e Kondo breakdown
Abstract
Moir\'e semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer is prepared in a Mott insulating state supporting a lattice of local magnetic moments and the other layer in a metallic state supporting itinerant carriers. The artificial Kondo lattice enables the exploration of exotic states of matter near a continuously tunable Kondo breakdown. Here we report the emergence of a symmetry-broken Chern insulator at a moir\'e hole filling factor 4/3 in angle-aligned MoTe2/WSe2 moir\'e bilayers, which realize a chiral Kondo lattice. The symmetry-broken Chern insulator, which exhibits integer quantized Hall conductance at a fractional moir\'e filling, breaks the translational symmetry of the lattice spontaneously; it also appears only near a magnetic field-induced Kondo breakdown in the mixed-valence regime of the material. We further demonstrate that the magnetic field required to induce the Kondo breakdown and to stabilize the symmetry-broken Chern insulator is twist angle dependent. The results present new opportunities for exploring the subtle interplay between topology and Kondo interactions in moir\'e semiconductors.
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Wanghao Tian, Bowen Shen, Lizhong Li, Mingjie Zhang, Feng Liu, Chushan Li, Yaotian Liu, Fan Xu, Kenji Watanabe, Takashi Taniguchi, Peiling Li, Li Lu, Yang Xu, Shengwei Jiang, Tingxin Li, Jie Shan, Kin Fai Mak. 2026-02-19. Emergence of a symmetry-broken Chern insulator near a moir\'e Kondo breakdown. https://arxiv.org/abs/2602.17349
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