arXiv subjects

Tilo H. Yang

Publications and source records attributed to Tilo H. Yang.

5 recordsLinked to original sources

arXiv2026

Encapsulation epitaxy of air-stable monolayer superconducting films for quantum circuits and qubits

Two-dimensional (2D) superconductors are an emerging platform for strongly correlated physics and quantum information science. Their reduced dimensionality, atomically flat interfaces, and high crystallinity are attractive for realizing compact lumped-element devices in superconducting circuits. However, synthesizing large-area, monolayer 2D superconductors remains challenging because of their susceptibility to oxidation. Here, we report an "encapsulation epitaxy" mechanism that enables the growth of large-area, air-stable, monolayer superconducting NbSe2 films and explore their use in superconducting quantum circuits. A 2D encapsulation layer, such as graphene or hexagonal boron nitride (hBN), pre-deposited on a 3D substrate (e.g., SiO2 or Si3N4), serves both as a template for epitaxial growth of monolayer NbSe2 (1L-NbSe2) underneath it and as a protective cover. This approach produces uniform, large-area (>1-inch) 1L-NbSe2 with greatly enhanced ambient stability, enabling device fabrication in air. The resulting 1L-graphene/NbSe2 heterostructures exhibit robust superconductivity (Tc ~ 1 K) and enhanced charge density wave order (TCDW ~ 177 K), indicative of high material quality. We further integrate 1L-NbSe2 into superconducting circuits using oxidation-free transfer and superconducting edge-contact techniques. The 1L-NbSe2 exhibits a measured kinetic inductance LK ~ 0.7 nH/square, making it suitable for quantum circuits requiring high-kinetic-inductance elements. Encapsulation epitaxy thus provides a route to air-stable 2D superconductors and van der Waals heterostructures, with potential for wafer-scale, monolithic fabrication of superconducting quantum circuitry.

cond-mat.supr-con↗

arXiv2025

Synthesis-related nanoscale defects in Mo-based Janus monolayers revealed by cross-correlated AFM and TERS imaging

Two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) are promising candidates for various applications in non-linear optics, energy harvesting, and catalysis. These materials are usually synthesized via chemical conversion of pristine TMDs. Nanometer-scale characterization of the obtained Janus materials' morphology and local composition is crucial for both the synthesis optimization and the future device applications. In this work, we present a cross-correlated atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) study of Janus $\mathrm{Mo}_{\mathrm{Se}}^{\mathrm{S}}$ and Janus $\mathrm{Mo}_{\mathrm{S}}^{\mathrm{Se}}$ monolayers synthesized by the hydrogen plasma-assisted chemical conversion of $\mathrm{MoSe}_2$ and $\mathrm{MoS}_2$, respectively. We demonstrate how the choice of the growth substrate and the starting TMD affects the morphology of the resulting Janus material. Furthermore, by employing TERS imaging, we demonstrate the presence of nanoscale islands (~20 nm across) of $\mathrm{MoSe}_2$-$\mathrm{Mo}_{\mathrm{Se}}^{\mathrm{S}}$ ($\mathrm{MoS}_2$-$\mathrm{Mo}_{\mathrm{S}}^{\mathrm{Se}}$) vertical heterostructures originating from the bilayer nanoislands in the precursor monolayer crystals. The understanding of the origins of nanoscale defects in Janus TMDs revealed in our study can help with further optimization of the Janus conversion process towards uniform and wrinkle-/crack-free Janus materials. Moreover, our work shows that cross-correlated AFM and TERS imaging is a powerful and accessible method for studying nanoscale composition and defects in Janus TMD monolayers.

cond-mat.mtrl-sci↗

arXiv2024

Non-perturbative cathodoluminescence microscopy of beam-sensitive materials

Cathodoluminescence microscopy is now a well-established and powerful tool for probing the photonic properties of nanoscale materials, but in many cases, nanophotonic materials are easily damaged by the electron-beam doses necessary to achieve reasonable cathodoluminescence signal-to-noise ratios. Two-dimensional materials have proven particularly susceptible to beam-induced modifications, yielding both obstacles to high spatial-resolution measurement and opportunities for beam-induced patterning of quantum photonic systems. Here pan-sharpening techniques are applied to cathodoluminescence microscopy in order to address these challenges and experimentally demonstrate the promise of pan-sharpening for minimally-perturbative high-spatial-resolution spectrum imaging of beam-sensitive materials.

physics.optics↗

arXiv2024

Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors

In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real-space structural transformation. Here, we report magnetic field (B)-induced giant electric hysteretic responses to back-gate voltages in ML-MoS2 field-effect transistors (FETs) on SiO2/Si at temperatures < 20 K. The observed hysteresis increases with |B| up to 12 T and is tunable by varying the temperature. Raman spectroscopic and scanning tunneling microscopic studies reveal significant lattice expansion with increasing |B| at 4.2 K, and this lattice expansion becomes asymmetric in ML-MoS2 FETs on rigid SiO2/Si substrates, leading to out-of-plane mirror symmetry breaking and the emergence of a tunable out-of-plane ferroelectric-like polar order. This broken symmetry-induced polarization in ML-MoS2 shows typical ferroelectric butterfly hysteresis in piezo-response force microscopy, adding ML-MoS2 to the single-layer material family that exhibit out-of-plane polar order-induced ferroelectricity, which is promising for such technological applications as cryo-temperature ultracompact non-volatile memories, memtransistors, and ultrasensitive magnetic field sensors. Moreover, the polar effect induced by asymmetric lattice expansion may be further generalized to other ML-TMDs and achieved by nanoscale strain engineering of the substrate without magnetic fields.

cond-mat.str-el↗

arXiv2022

Homoepitaxy of rhombohedral-stacked MoS2 with room temperature switchable ferroelectricity

The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural 3R crystals is difficult due to lack of co-existing 3R stacking domains. Here, we present that MoS2 homoepitaxial patterns with 3R polytypic domains can manifest switchable ferroelectricity at room-temperature. Based on the diffusion limited aggregation theory, such MoS2 patterns are formed under the low Mo chemical potential and low temperature with respect to common chemical vapor deposition synthesis. The alternation of 3R polytypes in the MoS2 homoepitaxial patterns, observed by scanning transmission electron microscopy, accounts for ferroelectricity switching. The MoS2 field-effect transistors with 3R polytypic domains exhibit a repeatable counterclockwise hysteresis with gate voltage sweeping, an indication of ferroelectricity switching, and the memory window exceeds those measured for compact-shaped 3R bilayer devices. This work provides a direct growth concept for layered 3R-based ferroelectric memory.

cond-mat.mtrl-sci↗