arXiv subjects

Steven Brems

Publications and source records attributed to Steven Brems.

6 recordsLinked to original sources

arXiv2026

Spectral Fingerprints of Resonant Defect Scattering by Substitutional Mn in Graphene

Using substitutional Mn in graphene/Cu(111) as a model point defect, we combine scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) to test the predicted fingerprints of resonant scattering. As the Mn concentration increases to 0.44%, the Dirac point stretching reaches 0.52 eV, while momentum broadening remains energy independent. These spectral fingerprints classify substitutional Mn as a strong resonant scatterer and establish the combination of STM and ARPES as a powerful approach to identify and characterize resonant disorder in graphene.

cond-mat.mes-hall↗

arXiv2026

Low Distortion Fusion Bonding using Pneumatically Warped Wafers

Backside power-delivery-network (BSPDN) schemes require wafer-to-wafer bonding steps that do not leave high order shape changes or localized stresses in the bonded stack to ensure that these don't get transferred to the thinned wafer for further lithographic exposure. However, bonding mechanics involve strong adhesive forces which can inherently create localized distortions that lithography tools must eventually compensate. Some contributors to grid distortion of the target wafer are, method of bond initiation, bond front velocity variations, and lack of symmetry between the wafers. In this work, we evaluate a low-distortion bonding approach in the SUSS XBA tool, where some of these contributors are tackled at the source, namely by initiating the bond without a localized external force, and keeping the wafers compliant & symmetric during bonding. Wafers are bonded with a slight pre-stress due to controlled gas pressure applied over the whole backside of the wafers throughout bonding. Wafer-shape measurements of the bonded stacks are used to perform gradient-based in-plane-displacements (IPD) modelling to estimate bonding-induced grid distortion. Dense scanner metrology is used on patterned-bonded wafers to confirm the location and severity of distortion predictions from patterned wafer geometry (PWG) measurements. On the PWG distortion maps and scanner grid readouts, we perform alignment and CPE modelling with different field layouts. Sub-10 nm levels of residual grid distortion are achievable with relatively low-order correction models, and less than or equal to 3 nm by using advanced CPE models. These results demonstrate that pneumatically warped bonding yields low-distortion bonded stacks, and that simple process tuning can decouple the dominant distortion source from edge-related variability.

physics.app-ph↗

arXiv2026

Graphene-based Photodetector with Engineered Hot Carrier Cooling Dynamics

Graphene has emerged as a promising material for integration into silicon photonics, owing to its ultrafast and broadband photoresponse without the need for an external bias voltage. This photoresponse relies on the photo-thermoelectric effect created by hot carriers. A key factor underlying the performance of graphene photodetectors is the cooling dynamics of these hot carriers. In this work, we engineer these dynamics in a WSe2-graphene-WSe2 waveguide-integrated photodetector. In particular, by introducing proximity screening by a nearby graphite layer to this structure, we prolong the hot-carrier cooling time, leading to an enhanced photoresponse. We characterize the cooling dynamics under continuous-wave laser excitation by employing a photomixing technique, revealing an increase in the cooling time by up to a factor of four. Direct photoresponse measurements show that the internal photoresponsivity improves by approximately 50%. Together, these results demonstrate the potential of proximity screening to enhance the performance of graphene-based photodetectors on an integrated photonics platform.

cond-mat.mes-hall↗

arXiv2023

Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform

Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish their wafer-scale integration in a 300mm pilot CMOS foundry environment. A hardmask is used to shape graphene, while tungsten-based contacts are fabricated using the damascene approach to enable CMOS-compatible fabrication. By analyzing data from hundreds of devices per wafer, the impact of specific processing steps on the performance could be identified and optimized. After optimization, modulation depth of 50 $\pm$ 4 dB/mm is demonstrated on 400 devices measured using 6 V peak-to-peak voltage. The electro-optical bandwidth is up to 15.1 $\pm$ 1 1.8 GHz for 25$\mu$m-long devices. The results achieved are comparable to lab-based record-setting graphene devices of similar design and CVD graphene quality. By demonstrating the reproducibility of the results across hundreds of devices, this work resolves the bottleneck of graphene wafer-scale integration. Furthermore, CMOS-compatible processing enables co-integration of graphene-based devices with other photonics and electronics building blocks on the same chip, and for high-volume low-cost manufacturing.

physics.app-ph↗

arXiv2021

Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)

Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh$^2$ law which better fits for higher temperatures. The crystal-quality of h-BN/Pt(111) is inferred from scanning low energy electron diffraction (x-y LEED). The data indicate a strong dependence of the epitaxy on the growth temperature. The dominant structure is an aligned coincidence lattice with 10 h-BN on 9 Pt(1$\times$1) unit cells and follows the substrate twinning at the millimeter scale.

cond-mat.mtrl-sci↗

arXiv2005

Reversing the training effect in exchange biased CoO/Co bilayers

We performed a detailed study of the training effect in exchange biased CoO/Co bilayers. High-resolution measurements of the anisotropic magnetoresistance (AMR) are consistent with nucleation of magnetic domains in the antiferromagnetic CoO layer during the first magnetization reversal. This accounts for the enhanced spin rotation observed in the ferromagnetic Co layer for all subsequent reversals. Surprisingly, the AMR measurements as well as magnetization measurements reveal that it is possible to partially reinduce the untrained state by performing a hysteresis measurement with an in plane external field perpendicular to the cooling field. Indeed, the next hysteresis loop obtained in a field parallel to the cooling field resembles the initial asymmetric hysteresis loop, but with a reduced amount of spin rotation occurring at the first coercive field. This implies that the antiferromagnetic domains, which are created during the first reversal after cooling, can be partially erased.

cond-mat.mtrl-sci↗