arXiv subjects

Runze Yu

Publications and source records attributed to Runze Yu.

21 records · Page 2Linked to original sources

arXiv2018

Emphanitic anharmonicity in PbSe at high temperature and the anomalous electronic properties in the PbQ (Q=S, Se, Te) system

The temperature dependence of the local structure of PbSe has been investigated using pair distribution function (PDF) analysis of x-ray and neutron powder diffraction data and density functional theory (DFT) calculations. Observation of non-Gaussian PDF peaks at high temperature indicates the presence of significant anharmonicity, which can be modeled as Pb off-centering along [100] directions that grows on warming similar to the behavior seen in PbTe and PbS and sometimes called emphanisis. Interestingly, the emphanitic response is smaller in PbSe than in both PbS and PbTe indicating a non-monotonic response with chalcogen atomic number in the PbQ (Q=S, Se, Te) series. The DFT calculations indicate a correlation between band gap and the amplitude of [100] dipolar distortion, suggesting that emphanisis may be behind the anomalous composition and temperature dependencies of the band gaps in this series.

cond-mat.mtrl-sci↗

arXiv2017

Relationship between the parent charge transfer gap and maximum transition temperature in cuprates

One of the biggest puzzles concerning the cuprate high temperature superconductors is what determines the maximum transition temperature (Tc,max), which varies from less than 30 K to above 130 K in different compounds. Despite this dramatic variation, a robust trend is that within each family, the double-layer compound always has higher Tc,max than the single-layer counterpart. Here we use scanning tunneling microscopy to investigate the electronic structure of four cuprate parent compounds belonging to two different families. We find that within each family, the double layer compound has a much smaller charge transfer gap size ($Δ_{CT}$), indicating a clear anticorrelation between $Δ_{CT}$ and Tc,max. These results suggest that the charge transfer gap plays a key role in the superconducting physics of cuprates, which shed important new light on the high Tc mechanism from doped Mott insulator perspective.

cond-mat.str-el↗

arXiv2012

Visualizing the atomic scale electronic structure of the Ca2CuO2Cl2 Mott insulator

Although the mechanism of superconductivity in the cuprates remains elusive, it is generally agreed that at the heart of the problem is the physics of doped Mott insulators. The cuprate parent compound has one unpaired electron per Cu site, and is predicted by band theory to be a half-filled metal. The strong onsite Coulomb repulsion, however, prohibits electron hopping between neighboring sites and leads to a Mott insulator ground state with antiferromagnetic (AF) ordering. Charge carriers doped into the CuO2 plane destroy the insulating phase and superconductivity emerges as the carrier density is sufficiently high. The natural starting point for tackling high Tc superconductivity is to elucidate the electronic structure of the parent Mott insulator and the behavior of a single doped charge. Here we use a scanning tunneling microscope to investigate the atomic scale electronic structure of the Ca2CuO2Cl2 parent Mott insulator of the cuprates. The full electronic spectrum across the Mott-Hubbard gap is uncovered for the first time, which reveals the particle-hole symmetric and spatially uniform Hubbard bands. A single electron donated by surface defect is found to create a broad in-gap electronic state that is strongly localized in space with spatial characteristics intimately related to the AF spin background. The unprecedented real space electronic structure of the parent cuprate sheds important new light on the origion of high Tc superconductivity from the doped Mott insulator perspective.

cond-mat.str-el↗