arXiv subjects

Roy Olsson

Publications and source records attributed to Roy Olsson.

3 recordsLinked to original sources

arXiv2026

Magnetoelectric Wireless Power Transfer Receivers for Sub-Millimeter Scale Implantable Bioelectronics

Implanted biomedical devices for continuous physiological monitoring require reliable wireless power delivery to anatomically constrained and sensitive sites where batteries are impractical or hazardous. Existing wireless power transfer (WPT) modalities, including inductive coils and ultrasonic transducers suffer from performance degradation as receiver dimensions are miniaturized, limiting their application for space-limited locations such as fingertips, the ocular cavity, and intracranial sites. We present a microelectromechanical systems (MEMS) magnetoelectric WPT receiver integrating piezoelectric aluminum scandium nitride and magnetostrictive iron-cobalt/silver multilayer thin-films, microfabricated within a footprint of 770 x 360 x 2.25 micrometers. The receiver operates at its 100 kHz flexural-mode resonance with a quality factor of 1180 and delivers 1.0 microwatt to a matched 10 kohm load under a standard-compliant 205 micro-Tesla RMS excitation field. This device exhibits a magnetoelectric coefficient of 1274 V cm-1 Oe-1 and a power figure of merit (FOMP) of 4.05 x 10-3 mW cm-3 Oe-2 Hz-1, both the highest reported values of comparable magnetoelectric WPT receivers. The FOM is 20-fold higher than the next best comparable-frequency device. These miniaturized devices establish MEMS magnetoelectric transduction as a scalable platform for battery-free wireless powering of microwatt-class implants in the most anatomically demanding regions of the body.

physics.app-ph↗

arXiv2026

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN

Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we show that compositional grading within a continuous wurtzite AlN-AlScN lattice mitigates these limitations by distributing structural and polarization discontinuities across the film thickness, reducing defect formation and local field concentration. In a 20 nm graded heterostructure, monotonic Sc incorporation and AlN-rich boundaries produce reversible ferroelectric switching, an as-grown metal-polar state, a 21% higher breakdown field, 10% enhanced remanent polarization, and 40x higher resistivity relative to homogeneous AlScN. Time-domain PUND measurements reveal strongly suppressed post-switching leakage, consistent with reduced defect-assisted and polarization-coupled conduction. This improved dielectric robustness enables ferroelectric functionality in 5 nm graded stacks containing only a 2 nm $\mathrm{Al}_{0.64}\mathrm{Sc}_{0.36}\mathrm{N}$ region, with measurable switching near 1 V. These results establish compositional grading as a defect- and field-management strategy for scalable ultrathin wurtzite ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2025

Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm$^2$

Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques. Here, we demonstrate the first successful areal scaling of Aluminum Scandium Nitride (AlScN) ferroelectric diode (FeDiode) memory down to 40 nm device diameters while maintaining ON/OFF > 60. Using a 20 nm thick Al0.64Sc0.36N ferroelectric layer, we evaluate both metal-insulator-ferroelectric-metal (MIFM) and metal-ferroelectric-metal (MFM) architectures for scaled resistive memory devices. Our scaled devices exhibit an enhanced breakdown-to-coercive field ratio exceeding 2.6 due to increased breakdown field. The MIFM devices demonstrate stable 3-bit non-volatile multistate behavior with clearly distinguishable resistance states and retention exceeding 4*10^4 seconds at 85 C. By achieving more than a million-fold areal scaling with enhanced performance metrics, this work establishes AlScN-based FeDiode memory as a highly promising platform for non-volatile storage with potential for direct integration into CMOS technology.

cond-mat.mes-hall↗