arXiv subjects

Nathaniel P. Stern

Publications and source records attributed to Nathaniel P. Stern.

At least 19 recordsLinked to original sources

arXiv2026

Many-body benchmarking of DFT local-registry energetics in bilayer InSe

Density functional theory (DFT) is widely used to model twisted bilayers, but the accuracy of the local stacking energetics underlying such models remains uncertain. Here, we benchmark the local-registry landscape of bilayer InSe using diffusion quantum Monte Carlo (DMC). DFT predicts that AB, AAr, and ABr stackings, which share the same interfacial Se registry, are nearly degenerate within 1.5 meV/f.u. and exhibit nearly indistinguishable DFT charge-density responses. DMC instead separates these stackings by 8(5) and 41(4) meV/f.u., while the energy difference between the most stable and least stable registries reaches 60(7) meV/f.u.. These large energy separations show that the stacking energetics are not determined by the interfacial atomic motif alone but depend on the full registry and its associated many-body electronic response. More broadly, these results show that DFT-based moir\'e models can substantially underestimate local stacking-energy corrugation, with direct consequences for predicted structural relaxation, domain formation, and electronic reconstruction in twisted layered materials.

cond-mat.mtrl-sci↗

arXiv2025

Modifying the Optical Emission of Vanadyl Phthalocyanine via Molecular Self-Assembly on van der Waals Materials

Vanadyl phthalocyanine (VOPc) is a promising organic molecule for applications in quantum information because of its thermal stability, efficient processing, and potential as a spin qubit. The deposition of VOPc in different molecular orientations allows the properties to be customized for integration into various devices. However, such customization has yet to be fully leveraged to alter its intrinsic properties, particularly optical emission. Normally, VOPc films on dielectric substrates emit a broad photoluminescence peak in the near-infrared range, attributed to transitions in the Pc ring from its pi orbital structure. In this work, we demonstrate that the dominant optical transition of VOPc can be shifted by over 250 meV through the controlled deposition of thin films on van der Waals material substrates. The weak interactions with van der Waals materials allow the molecules to uniquely self-assemble, resulting in modified optical behavior modulated by molecular phase and thickness. This work connects the self-assembling properties of molecules with their altered electronic structures and the resulting optical emission.

cond-mat.mtrl-sci↗

arXiv2025

High Temperature Quantum Emission from Covalently Functionalized van der Waals Heterostructures

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are attractive nanomaterials for quantum information applications due to single photon emission (SPE) from atomic defects, primarily tungsten diselenide (WSe2) monolayers. Defect and strain engineering techniques have been developed to yield high purity, deterministically positioned SPE in WSe2. However, a major challenge in application of these techniques is the low temperature required to observe defect-bound TMD exciton emission, typically limiting SPE to T<30 K. SPE at higher temperatures either loses purity or requires integration into complex devices such as optical cavities. Here, 2D heterostructure engineering and molecular functionalization are combined to achieve high purity (>90%) SPE in strained WSe2 persisting to over T=90 K. Covalent diazonium functionalization of graphite in a layered WSe2/graphite heterostructure maintains high purity up to T=90 K and single-photon source integrity up to T=115 K. This method preserves the best qualities of SPE from WSe2 while increasing working temperature to more than three times the typical range. This work demonstrates the versatility of surface functionalization and heterostructure design to synergistically improve the properties of quantum emission and offers new insights into the phenomenon of SPE from 2D materials.

cond-mat.mtrl-sci↗

arXiv2024

The Role of Defect Geometry in Localized Emission from Monolayer Tungsten Dichalcogenides

Understanding the mechanism of single photon emission (SPE) in two-dimensional (2D) material is an unsolved problem important for quantum optical materials and the development of quantum information applications. In 2D transition metal dichalcogenides (TMDs) such as tungsten diselenide (WSe2), quantum emission has been broadly attributed to exciton localization from atomic point defects, yet the precise microscopic origins are not fully understood. This work introduces an empirically grounded computational framework that explains both the origins of facile SPE in WSe2 and its relative scarcity in related TMD, tungsten disulfide. High resolution microscopy identifies native defect geometries existing in monolayer WSe2 lattices providing the ingredients necessary to build a realistic model. The qualitative effects of chalcogen type, defect geometry, and mechanical strain on the electronic structure are then individually assessed using density functional theory, from which a specific divacancy configuration emerges as the candidate for localized single-electron transitions that match observed spectral energies. Spectroscopy and photon correlation measurements further validate this model, establishing a self-consistent link between defect geometry, electronic structure, and quantum emission. By isolating the distinct roles of chalcogen type, defect configuration, and mechanical strain, this work provides a thorough investigation of exciton localization and optical behavior, contributing to a clearer picture of the physical drivers of single photon emission in tungsten-based TMDs.

cond-mat.mtrl-sci↗

arXiv2023

Molecular and solid-state topological polaritons induced by population imbalance

Strong coupling between electronic excitations in materials and photon modes results in the formation of polaritons, which display larger nonlinearities than their photonic counterparts due to their material component. We theoretically investigate how to optically control the topological properties of molecular and solid-state exciton-polariton systems by exploiting one such nonlinearity: saturation of electronic transitions. We demonstrate modification of the Berry curvature of three different materials when placed within a Fabry-Perot cavity and pumped with circularly polarized light, illustrating the broad applicability of our scheme. Importantly, while optical pumping leads to non-zero Chern invariants, unidirectional edge states do not emerge in our system as the bulk-boundary correspondence is not applicable. This work demonstrates a versatile approach to control topological properties of novel optoelectronic materials.

physics.chem-ph↗

arXiv2022

Layer-dependent optically-induced spin polarization in InSe

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for opto-electronics due to its high electron mobility, tunable direct bandgap, and quantum transport. There are predictions of spin-dependent optical selection rules suggesting potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the $g$-factor for InSe was extracted. Further investigations are done by calculating precession values using a $\textbf{k} \cdot \textbf{p}$ model, which is supported by \textit{ab-initio} density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. Optical orientation of spin is an important prerequisite for opto-spintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material.

cond-mat.mtrl-sci↗

arXiv2022

Collective dynamics Using Truncated Equations (CUT-E): simulating the collective strong coupling regime with few-molecule models

The study of molecular polaritons beyond simple quantum emitter ensemble models (e.g., Tavis-Cummings) is challenging due to the large dimensionality of these systems (the number of molecular emitters is $N\approx 10^{6}-10^{10}$) and the complex interplay of molecular electronic and nuclear degrees of freedom. This complexity constraints existing models to either coarse-grain the rich physics and chemistry of the molecular degrees of freedom or artificially limit the description to a small number of molecules. In this work, we exploit permutational symmetries to drastically reduce the computational cost of \textit{ab-initio} quantum dynamics simulations for large $N$. Furthermore, we discover an emergent hierarchy of timescales present in these systems, that justifies the use of an \textit{effective} single molecule to approximately capture the dynamics of the entire ensemble, an approximation that becomes exact as $N\rightarrow \infty$. We also systematically derive finite $N$ corrections to the dynamics, and show that addition of $k$ extra effective molecules is enough to account for phenomena whose rates scale as $\mathcal{O}(N^{-k})$. Based on this result, we discuss how to seamlessly modify existing single-molecule strong coupling models to describe the dynamics of the corresponding ensemble, as well as the crucial differences in phenomena predicted by each model. We call this approach Collective dynamics Using Truncated Equations (CUT-E), benchmark it against well-known results of polariton relaxation rates, and apply it to describe a universal cavity-assisted energy funneling mechanism between different molecular species. Beyond being a computationally efficient tool, this formalism provides an intuitive picture for understanding the role of bright and dark states in chemical reactivity, necessary to generate robust strategies for polariton chemistry.

quant-ph↗

arXiv2020

Spatial Mapping of Electrostatics and Dynamics across 2D Heterostructures

In situ electron microscopy is a key tool for understanding the mechanisms driving novel phenomena in 2D structures. Unfortunately, due to various practical challenges, technologically relevant 2D heterostructures prove challenging to address with electron microscopy. Here, we use the differential phase contrast imaging technique to build a methodology for probing local electrostatic fields during electrical operation with nanoscale precision in such materials. We find that by combining a traditional DPC setup with a high pass filter, we can largely eliminate electric fluctuations emanating from short-range atomic potentials. With this method, a priori electric field expectations can be directly compared with experimentally derived values to readily identify inhomogeneities and potentially problematic regions. We use this platform to analyze the electric field and charge density distribution across layers of hBN and MoS2.

cond-mat.mtrl-sci↗

arXiv2019

Direct Visualization of Electric Field induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order to understand the structural dynamics at play, especially at interfaces and defects, in the prototypical film of monolayer MoS2 under electrical bias. Through our sample fabrication process, we clearly identify the presence of mass transport in the presence of a lateral electric field. In particular, we observe that the voids present at grain boundaries combine to induce structural deformation. The electric field mediates a net vacancy flux from the grain boundary interior to the exposed surface edge sites that leaves molybdenum clusters in its wake. Following the initial biasing cycles, however, the mass flow is largely diminished, and the resultant structure remains stable over repeated biasing. We believe insights from this work can help explain observations of non-uniform heating and preferential oxidation at grain boundary sites in these materials.

cond-mat.mtrl-sci↗

arXiv2019

Bandgap closing at the screw dislocations of WS2 spirals

Van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) materials are emerging as one class of quantum materials holding novel optical and electronic properties. In particular, the bandgap tunability attractive for nanoelectronics technology have been observed up to 1.1 eV when applying dielectric screening or grain boundary engineering. Here we present the experimental observation of bandgap closing at the center of the screw dislocation-driven WS2 spiral pyramid by means of scanning tunneling spectroscopy, which is validated by first-principle calculations. The observed giant bandgap modulation is attributed to the presence of dangling bonds induced by the W-S broken and the enhanced localized stress in the core of the dislocation. Achieving this metallic state and the consequent vertical conducting channel presents a pathway to 3D-interconnected vdW heterostructure devices based on emergent semiconducting TMDCs.

cond-mat.mes-hall↗

arXiv2017

Valley-selective optical Stark effect probed by Kerr rotation

The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS$_2$ and WSe$_2$ using ultrafast optical pulses. Despite these advances, understanding of valley-sensitive optical Stark shifts in TMDCs has been limited by reflectance-based detection methods where the signal is small and prone to background effects. More sensitive polarization-based spectroscopy is required to better probe ultrafast Stark shifts for all-optical manipulation of valley energy levels. Here, we show time-resolved Kerr rotation to be a more sensitive probe of the valley-selective optical Stark effect in monolayer TMDCs. Compared to the established time-resolved reflectance methods, Kerr rotation is less sensitive to background effects. Kerr rotation provides a five-fold improvement in the signal-to-noise ratio of the Stark effect optical signal and a more precise estimate of the energy shift. This increased sensitivity allows for observation of an optical Stark shift in monolayer MoS$_2$ that exhibits both valley- and energy-selectivity, demonstrating the promise of this method for investigating this effect in other layered materials and heterostructures.

cond-mat.mtrl-sci↗

arXiv2017

Width-dependent Photoluminescence and Anisotropic Raman Spectroscopy from Monolayer MoS$_2$ Nanoribbons

Single layers of transition metal dichalcogenides such as MoS$_2$ are direct bandgap semiconductors with optical and electronic properties distinct from multilayers due to strong vertical confinement. Despite the fundamental monolayer limit of thickness, the electronic structure of isolated layers can be further tailored with lateral degrees of freedom in nanostructures such as quantum dots or nanoribbons. Although one-dimensionally confined monolayer semiconductors are predicted to have interesting size- and edge-dependent properties useful for spintronics applications, experiments on the opto-electronic features of monolayer transition metal dichalcogenide nanoribbons is limited. We use nanolithography to create monolayer MoS$_2$ nanoribbons with lateral sizes down to 20 nm. The Raman spectra show polarization anisotropy and size-dependent intensity. The nanoribbons prepared with this technique show reduced susceptibility to edge defects and emit photoluminescence with size-dependent energy that can be understood from a phenomenological model. Fabrication of monolayer nanoribbons with strong exciton emission can facilitate exploration of low-dimensional opto-electronic devices with controllable properties.

cond-mat.mes-hall↗

arXiv2017

Control of interlayer delocalization in 2H transition metal dichalcogenides

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hopping. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence.

cond-mat.mes-hall↗

arXiv2017

Valley-Polarized Exciton-Polaritons in a Monolayer Semiconductor

Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent superpositions of light and matter, exciton-polaritons, have been observed when these materials are strongly coupled to photons, but these hybrid quasiparticles do not harness the valley-sensitive excitations of monolayer transition metal dichalcogenides. Here, we demonstrate evidence for valley polarized exciton-polaritons in monolayers of MoS$_2$ embedded in a dielectric microcavity. Unlike traditional microcavity exciton-polaritons, these light-matter quasiparticles emit polarized light with spectral Rabi splitting. The interplay of cavity-modified exciton dynamics and intervalley relaxation in the high-cooperativity regime causes valley polarized exciton-polaritons to persist to room temperature, distinct from the vanishing polarization in bare monolayers. Achieving polarization-sensitive polaritonic devices operating at room temperature presents a pathway for manipulating novel valley degrees of freedom in coherent states of light and matter.

cond-mat.mtrl-sci↗

arXiv2016

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the thickness-dependent band structure implies the possibility of band realignment and a new interface charge state with properties distinct from the isolated layers. In this report, we probe the interface charge state using scanning photocurrent microscopy and gate-dependent transport with source-drain bias applied along the interface. Enhanced photoresponse observed at the interface is attributed to band bending. The effective conductivity of a material with a monolayer-multilayer interface of MoS$_2$ is demonstrated to be higher than that of independent monolayers or multilayers of MoS$_2$. A classic heterostructure model is constructed to interpret the electrical properties at the interface. Our work reveals that the band engineering at the transition metal dichalcogenides monolayer/multilayer interfaces can enhance the longitudinal conductance and field-effect mobility of the composite monolayer and multilayer devices.

cond-mat.mtrl-sci↗

arXiv2015

Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots

Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties can provide further degrees of freedom requisite for quantum information and spintronics. When seeking to combine these material features into QD structures, however, confinement can cause hybridization that inhibits the robustness of these emergent properties for insertion into quantum devices. Here, we show that a new class of laterally-confined materials, monolayer MoS$_2$ QDs, can be created through top-down nanopatterning of an atomically-thin two-dimensional semiconductor so that they exhibit the same valley polarization as in a continuous monolayer sheet. Semiconductor-compatible nanofabrication process allows for these low-dimensional materials to be integrated into complex systems, an important feature for advancing quantum information applications. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS$_2$ QDs using semiconductor-compatible processing suggest that monolayer semiconductor QDs have the potential to be multimodal building blocks of integrated quantum information and spintronics systems.

cond-mat.mes-hall↗

arXiv2015

Silicon-nitride photonic circuits interfaced with monolayer MoS$_2$

We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

cond-mat.mtrl-sci↗

arXiv2014

Evaluation of defects in cuprous oxide through exciton luminescence imaging

The various decay mechanisms of excitons in cuprous oxide (Cu2O) are highly sensitive to defects which can relax selection rules. Here we report cryogenic hyperspectral imaging of exciton luminescence from cuprous oxide crystals grown via the floating zone method showing the samples have few defects. Some locations, however, show strain splitting of the 1s orthoexciton triplet polariton luminescence. Strain is reduced by annealing. In addition, annealing causes annihilation of oxygen and copper vacancies, which leads to a negative correlation between luminescence of unlike vacancies.

cond-mat.mtrl-sci↗