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arXiv · 1612.03921

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Ying Jia·Teodor K. Stanev·Erik J. Lenferink·Nathaniel P. Stern
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Abstract

Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the thickness-dependent band structure implies the possibility of band realignment and a new interface charge state with properties distinct from the isolated layers. In this report, we probe the interface charge state using scanning photocurrent microscopy and gate-dependent transport with source-drain bias applied along the interface. Enhanced photoresponse observed at the interface is attributed to band bending. The effective conductivity of a material with a monolayer-multilayer interface of MoS$_2$ is demonstrated to be higher than that of independent monolayers or multilayers of MoS$_2$. A classic heterostructure model is constructed to interpret the electrical properties at the interface. Our work reveals that the band engineering at the transition metal dichalcogenides monolayer/multilayer interfaces can enhance the longitudinal conductance and field-effect mobility of the composite monolayer and multilayer devices.

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Ying Jia, Teodor K. Stanev, Erik J. Lenferink, Nathaniel P. Stern. 2016-12-12. Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors. https://doi.org/10.1088/2053-1583%2F4%2F2%2F021012

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