arXiv subjects

Michael O. Thompson

Publications and source records attributed to Michael O. Thompson.

14 recordsLinked to original sources

arXiv2026

Autonomous Materials Exploration by Integrating Automated Phase Identification and AI-Assisted Human Reasoning

Autonomous experimentation holds the potential to accelerate materials development by combining artificial intelligence (AI) with modular robotic platforms to explore extensive combinatorial chemical and processing spaces. Such self-driving laboratories can not only increase the throughput of repetitive experiments, but also incorporate human domain expertise to drive the search towards user-defined objectives, including improved materials performance metrics. We present an autonomous materials synthesis extension to SARA, the Scientific Autonomous Reasoning Agent, utilizing phase information provided by an automated probabilistic phase labeling algorithm to expedite the search for targeted phase regions. By incorporating human input into an expanded SARA-H (SARA with human-in-the-loop) framework, we enhance the efficiency of the underlying reasoning process. Using synthetic benchmarks, we demonstrate the efficiency of our AI implementation and show that the human input can contribute to significant improvement in sampling efficiency. We conduct experimental active learning campaigns using robotic processing of thin-film samples of several oxide material systems, including Bi$_2$O$_3$, SnO$_x$, and Bi-Ti-O, using lateral-gradient laser spike annealing to synthesize and kinetically trap metastable phases. We showcase the utility of human-in-the-loop autonomous experimentation for the Bi-Ti-O system, where we identify extensive processing domains that stabilize $\delta$-Bi$_2$O$_3$ and Bi$_2$Ti$_2$O$_7$, explore dwell-dependent ternary oxide phase behavior, and provide evidence confirming predictions that cationic substitutional doping of TiO$_2$ with Bi inhibits the unfavorable transformation of the metastable anatase to the ground-state rutile phase. The autonomous methods we have developed enable the discovery of new materials and new understanding of materials synthesis and properties.

cond-mat.mtrl-sci↗

arXiv2025

Limitations on Activation of High Dose Ge implant in beta-Ga2O3

Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are required. Ge is a promising alternative n-type dopant with an ionic radius similar to Ga. Homoepitaxial 010 beta-Ga2O3 films were implanted with Ge to form 50 and 100 nm box concentration of 3*10^19 cm^-3 and 5*10^19 cm^-3, with damage ranging from 1.2 to 2.0 displacement per atom. For lower damage implants, optimized anneals in ultrahigh purity N2 at 950-1000 C for 5-10 minutes resulted in Rs of 600-700 omega/sqr, mobilities of 60-70 cm^2/Vs, and Ge activation of up to 40%. For higher damage implants, activation dropped to 23% with similar mobilities. Ge diffusion, measured by second ion mass spectrometry, showed formation of a Ge "clustering peak" with a concentration exceeding the initial implant following anneals in N2 or O2 at 950-1000 C. Beyond this peak, minimal Ge diffusion occurred for N2 anneals at 950 C, but at 1050 C non-Fickian diffusion extended to >200 nm. Electrical activation data suggests that clustered Ge is electrically inactive. To understand Ge clustering, several samples were characterized by synchrotron x-ray diffraction. Second-phase precipitates were observed in as-implanted samples which then fully dissoved after furnace annealing in N2 at 1050 C. Diffraction peaks suggest these implant-induced precipitates may be related to a high pressure Pa-3 phase of GeO2, and may evolve during anneals to explain the Ge clustering. Ultimately, we believe Ge clustering limits activation of implanted Ge at high concentrations.

cond-mat.mtrl-sci↗

arXiv2024

In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system

In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successful etching of both heteroepitaxial (-201)-oriented and homoepitaxial (010)-oriented \b{eta}-Ga2O3 films over a wide range of substrate temperature, TBCl molar flows, and reactor pressures. We identify that the likely etchant is HCl (g) formed by the pyrolysis of TBCl in the hydrodynamic boundary layer above the substrate. The temperature dependence of the etch rate reveals two distinct regimes characterized by markedly different apparent activation energies. The extracted apparent activation energies suggest that at temperatures below ~800 {\deg}C the etch rate is likely limited by desorption of etch products. The relative etch rates of heteroepitaxial (-201) and homoepitaxial (010) \b{eta}-Ga2O3 were observed to scale by the ratio of the surface energies indicating an anisotropic etch. For (010) homoepitaxial films, relatively smooth post-etch surface morphology was achieved by tuning the etching parameters.

cond-mat.mtrl-sci↗

arXiv2023

Accumulation and removal of Si impurities on $\beta-Ga_2O_3$ arising from ambient air exposure

Here we report that the source of Si impurities commonly observed on (010) $\beta-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $\beta-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment the sample must be immediately put under vacuum, for the Si fully returns within 10 minutes of additional air exposure. Lastly, we demonstrate that performing a 30 minute HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent $Ga_2O_3$ growth.

physics.app-ph↗

arXiv2023

Probabilistic Phase Labeling and Lattice Refinement for Autonomous Material Research

X-ray diffraction (XRD) is an essential technique to determine a material's crystal structure in high-throughput experimentation, and has recently been incorporated in artificially intelligent agents in autonomous scientific discovery processes. However, rapid, automated and reliable analysis method of XRD data matching the incoming data rate remains a major challenge. To address these issues, we present CrystalShift, an efficient algorithm for probabilistic XRD phase labeling that employs symmetry-constrained pseudo-refinement optimization, best-first tree search, and Bayesian model comparison to estimate probabilities for phase combinations without requiring phase space information or training. We demonstrate that CrystalShift provides robust probability estimates, outperforming existing methods on synthetic and experimental datasets, and can be readily integrated into high-throughput experimental workflows. In addition to efficient phase-mapping, CrystalShift offers quantitative insights into materials' structural parameters, which facilitate both expert evaluation and AI-based modeling of the phase space, ultimately accelerating materials identification and discovery.

cond-mat.mtrl-sci↗

arXiv2023

Thermodynamic route of Nb3Sn nucleation: Role of oxygen

Intermetallic Nb3Sn alloys have long been believed to form through Sn diffusion into Nb. However, our observations of significant oxygen content in Nb3Sn prompted an investigation of alternative formation mechanisms. Through experiments involving different oxide interfaces (clean HF-treated, native oxidized, and anodized), we demonstrate a thermodynamic route that fundamentally challenges the conventional Sn diffusion mechanism for Nb3Sn nucleation. Our results highlight the critical involvement of a SnOx intermediate phase. This new nucleation mechanism identifies the principles for growth optimization and new synthesis of high-quality Nb3Sn superconductors.

cond-mat.mtrl-sci↗

arXiv2023

Surface oxides, carbides, and impurities on RF superconducting Nb and Nb3Sn: A comprehensive analysis

Surface structures on radio-frequency (RF) superconductors are crucially important in determining their interaction with the RF field. Here we investigate the surface compositions, structural profiles, and valence distributions of oxides, carbides, and impurities on niobium (Nb) and niobium-tin (Nb3Sn) in situ under different processing conditions. We establish the underlying mechanisms of vacuum baking and nitrogen processing in Nb and demonstrate that carbide formation induced during high-temperature baking, regardless of gas environment, determines subsequent oxide formation upon air exposure or low-temperature baking, leading to modifications of the electron population profile. Our findings support the combined contribution of surface oxides and second-phase formation to the outcome of ultra-high vacuum baking (oxygen processing) and nitrogen processing. Also, we observe that vapor-diffused Nb3Sn contains thick metastable oxides, while electrochemically synthesized Nb3Sn only has a thin oxide layer. Our findings reveal fundamental mechanisms of baking and processing Nb and Nb3Sn surface structures for high-performance superconducting RF and quantum applications

cond-mat.mtrl-sci↗

arXiv2023

ZrNb(CO) RF superconducting thin film with high critical temperature in the theoretical limit

Superconducting radio-frequency (SRF) resonators are critical components for particle accelerator applications, such as free-electron lasers, and for emerging technologies in quantum computing. Developing advanced materials and their deposition processes to produce RF superconductors that yield nanoohms surface resistances is a key metric for the wider adoption of SRF technology. Here we report ZrNb(CO) RF superconducting films with high critical temperatures (Tc) achieved for the first time under ambient pressure. The attainment of a Tc near the theoretical limit for this material without applied pressure is promising for its use in practical applications. A range of Tc, likely arising from Zr doping variation, may allow a tunable superconducting coherence length that lowers the sensitivity to material defects when an ultra-low surface resistance is required. Our ZrNb(CO) films are synthesized using a low-temperature (100 - 200 C) electrochemical recipe combined with thermal annealing. The phase transformation as a function of annealing temperature and time is optimized by the evaporated Zr-Nb diffusion couples. Through phase control, we avoid hexagonal Zr phases that are equilibrium-stable but degrade Tc. X-ray and electron diffraction combined with photoelectron spectroscopy reveal a system containing cubic ZrNb mixed with rocksalt NbC and low-dielectric-loss ZrO2. We demonstrate proof-of-concept RF performance of ZrNb(CO) on an SRF sample test system. BCS resistance trends lower than reference Nb, while quench fields occur at approximately 35 mT. Our results demonstrate the potential of ZrNb(CO) thin films for particle accelerator and other SRF applications.

cond-mat.mtrl-sci↗

arXiv2023

Smooth, homogeneous, high-purity Nb3Sn superconducting RF resonant cavity by seed-free electrochemical synthesis

Workbench-size particle accelerators, enabled by Nb3Sn-based superconducting radio-frequency (SRF) cavities, hold the potential of driving scientific discovery by offering a widely accessible and affordable source of high-energy electrons and X-rays. Thin-film Nb3Sn RF superconductors with high quality factors, high operation temperatures, and high-field potentials are critical for these devices. However, surface roughness, non-stoichiometry, and impurities in Nb3Sn deposited by conventional Sn-vapor diffusion prevent them from reaching their theoretical capabilities. Here we demonstrate a seed-free electrochemical synthesis that pushes the limit of chemical and physical properties in Nb3Sn. Utilization of electrochemical Sn pre-deposits reduces the roughness of converted Nb3Sn by five times compared to typical vapor-diffused Nb3Sn. Quantitative mappings using chemical and atomic probes confirm improved stoichiometry and minimized impurity concentrations in electrochemically synthesized Nb3Sn. We have successfully applied this Nb3Sn to the large-scale 1.3 GHz SRF cavity and demonstrated ultra-low BCS surface resistances at multiple operation temperatures, notably lower than vapor-diffused cavities. Our smooth, homogeneous, high-purity Nb3Sn provides the route toward high efficiency and high fields for SRF applications under helium-free cryogenic operations.

cond-mat.mtrl-sci↗

arXiv2023

Kinetic Insights into Bridge Cleavage Pathways in Periodic Mesoporous Organosilicas

Bridging functionalities in periodic mesoporous organosilicas (PMOs) enable new functionalities for a wide range of applications. Bridge cleavage is frequently observed during anneals required to form porous structures, yet the mechanism of these bridge cleavages has not been completely resolved. Here, we reveal these chemical transformations and their kinetic pathways on sub-millisecond timescales induced by laser heating. By varying anneal times and temperatures, the transformation dynamics of bridge cleavage and structural transformations, and their activation energies, are determined. The structural relaxation time for individual reactions and their effective local heating time are determined and compared, and results directly demonstrate the manipulation of different molecules through kinetic control of the sequence of reactions. By isolating and understanding the earliest stage of structural transformations, this study identifies the kinetic principles for new synthesis and post-processing routes to control individual molecules and reactions in PMOs and other material systems with multi-functionalities.

cond-mat.mtrl-sci↗

arXiv2022

Silicon-doped $\beta$-Ga$_2$O$_3$ films grown at 1 $\mu$m/h by suboxide molecular-beam epitaxy

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $\beta$-Ga$_2$O$_3$ at a growth rate of ~1 ${\mu}$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $\beta$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 ${\mu}$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 ${\mu}$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $\beta$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 ${\mu}$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $\beta$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 ${\mu}$m/h.

cond-mat.mtrl-sci↗

arXiv2021

Autonomous synthesis of metastable materials

Autonomous experimentation enabled by artificial intelligence (AI) offers a new paradigm for accelerating scientific discovery. Non-equilibrium materials synthesis is emblematic of complex, resource-intensive experimentation whose acceleration would be a watershed for materials discovery and development. The mapping of non-equilibrium synthesis phase diagrams has recently been accelerated via high throughput experimentation but still limits materials research because the parameter space is too vast to be exhaustively explored. We demonstrate accelerated synthesis and exploration of metastable materials through hierarchical autonomous experimentation governed by the Scientific Autonomous Reasoning Agent (SARA). SARA integrates robotic materials synthesis and characterization along with a hierarchy of AI methods that efficiently reveal the structure of processing phase diagrams. SARA designs lateral gradient laser spike annealing (lg-LSA) experiments for parallel materials synthesis and employs optical spectroscopy to rapidly identify phase transitions. Efficient exploration of the multi-dimensional parameter space is achieved with nested active learning (AL) cycles built upon advanced machine learning models that incorporate the underlying physics of the experiments as well as end-to-end uncertainty quantification. With this, and the coordination of AL at multiple scales, SARA embodies AI harnessing of complex scientific tasks. We demonstrate its performance by autonomously mapping synthesis phase boundaries for the Bi$_2$O$_3$ system, leading to orders-of-magnitude acceleration in establishment of a synthesis phase diagram that includes conditions for kinetically stabilizing $\delta$-Bi$_2$O$_3$ at room temperature, a critical development for electrochemical technologies such as solid oxide fuel cells.

cond-mat.mtrl-sci↗

arXiv2020

Optical Identification of Materials Transformations in Oxide Thin Films

Recent advances in high-throughput experimentation for combinatorial studies have accelerated the discovery and analysis of materials across a wide range of compositions and synthesis conditions. However, many of the more powerful characterization methods are limited by speed, cost, availability, and/or resolution. To make efficient use of these methods, there is value in developing approaches for identifying critical compositions and conditions to be used as a-priori knowledge for follow-up characterization with high-precision techniques, such as micron-scale synchrotron based X-ray diffraction (XRD). Here we demonstrate the use of optical microscopy and reflectance spectroscopy to identify likely phase-change boundaries in thin film libraries. These methods are used to delineate possible metastable phase boundaries following lateral-gradient Laser Spike Annealing (lg-LSA) of oxide materials. The set of boundaries are then compared with definitive determinations of structural transformations obtained using high-resolution XRD. We demonstrate that the optical methods detect more than 95% of the structural transformations in a composition-gradient La-Mn-O library and a Ga$_2$O$_3$ sample, both subject to an extensive set of lg-LSA anneals. Our results provide quantitative support for the value of optically-detected transformations as a priori data to guide subsequent structural characterization, ultimately accelerating and enhancing the efficient implementation of $\mu$m-resolution XRD experiments.

cond-mat.mtrl-sci↗

arXiv2013

Deposited low temperature silicon GHz modulator

The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick undercladding for optical guiding that bulk silicon wafers to not provide. While the undercladding problem can be partially addressed by substrate removal techniques, the complexity of co-integrating photonics with state-of-the-art transistors and real estate competition between electronics and photonics remain problematic. We show here a platform for deposited GHz silicon photonics based on polycrystalline silicon with high optical quality suitable for high performance electro-optic devices. We demonstrate 3 Gbps polysilicon electro-optic modulator fabricated on a deposited polysilicon layer fully compatible with CMOS backend integration. These results open up an array of possibilities for silicon photonics including photonics on DRAM and flexible substrates.

physics.optics↗