arXiv subjects

Marisa Hocking

Publications and source records attributed to Marisa Hocking.

9 recordsLinked to original sources

arXiv2026

Fermiology and the Candidate Chiral Superconductor in Rhombohedral Tetralayer Graphene

Chiral superconductivity, in which the phase of the superconducting order parameter winds in momentum space, has long been sought for its close link to topological superconductivity. Recent work reported a superconductor in rhombohedral multilayer graphene emerging from a time-reversal symmetry broken normal state, suggesting that it could be a chiral superconductor. However, the possibility of chirality depends on the symmetry and structure of the normal-state Fermi surface, which have not been directly measured. Here we measure quantum oscillations in rhombohedral tetralayer graphene over a broad range of the phase diagram, including the superconducting region. At densities well above the onset of superconductivity, we reproduce previously-reported oscillations consistent with a spin- and valley-polarized quarter metal with a single simply-connected Fermi pocket. As the carrier density is reduced, we find a transition to a complex "multitone" state that persists through the superconducting region. This state's spectrum of quantum oscillations is incompatible with a simply-connected quarter metal. The next-simplest candidate normal states suggested by our microscopic modeling (fully-polarized annular, nematic, and three-pocket states) are inconsistent with our measurements, albeit difficult to rule out entirely. The normal state is thus seen to be richer than previously envisaged, reshaping the search for the superconducting mechanism and the possible chirality of the pairing channel.

cond-mat.supr-con↗

arXiv2026

Visualizing orbital magnetism in electron doped rhombohedral multilayer graphene

Electron doped rhombohedral multilayer graphene at high displacement field features an exceptionally flat band minimum with near-ideal quantum geometry. Experiments in this regime observe the formation of a 'quarter metal,' in which the electron liquid condenses into a single spin- and valley flavor. Remarkably, recent experiments have found a zero resistance state in the same region of the density- and displacement-field-tuned parameter space, attributed to the formation of a chiral superconductor from an orbitally ferromagnetic normal state. Here, we use nanoSQUID-on-tip magnetometry to map the orbital magnetization of electron-doped rhombohedral graphene devices ranging in thickness between 3 and 15 layers. Magnetization within the quarter metal phases peaks at finite density, consistent with concentration of the Berry curvature in a finite-momentum 'ring of fire'. Correlating transport and local magnetometry data in a superconducting tetralayer sample reveals a finite orbital ferromagnetic moment, providing direct evidence of valley polarization in the superconducting ground state. We further show that widely observed stochastic switching of the resistivity in both metallic and superconducting regimes arises from a density-tuned sign change in the valley-resolved total magnetic moment. This leads to the formation of metastable magnetic domains under typical gate control sequences and can also be harnessed for electric-field controlled switching of the magnetization across the entire device. Finally, high resolution measurements of the magnetization across a superconducting transition allow us to put an upper bound on the 'condensation magnetization' of 0.1 Bohr magneton per carrier, placing a strong quantitative restriction on theoretical models for ferromagnetic superconductivity.

cond-mat.mes-hall↗

arXiv2025

Low Resistance P-type Contacts to Monolayer WSe$_2$ through Chlorinated Solvent Doping

Tungsten diselenide (WSe$_2$) is a promising p-type semiconductor limited by high contact resistance ($R_\textrm{C}$) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe$_2$ to chloroform provides simple and stable p-type doping. In monolayer WSe$_2$ transistors with Pd contacts, chloroform increases the maximum hole current by over 100$\times$ (>200 $\mu$A/$\mu$m), reduces $R_\textrm{C}$ to ~2.5 k$\Omega\cdot\mu$m, and retains an on/off ratio of $10^{10}$ at room temperature. These improvements persist for over 8 months, survive annealing above 150 {\deg}C, and remain effective down to 10 K, enabling a cryogenic $R_\textrm{C}$ of ~1 k$\Omega\cdot\mu$m. Density functional theory indicates that chloroform strongly physisorbs to WSe$_2$, inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy reveal that chloroform intercalates at the WSe$_2$ interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder. This robust, scalable approach enables high-yield WSe$_2$ transistors with good p-type performance.

cond-mat.mtrl-sci↗

arXiv2024

Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts

Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channels. Among 2D semiconductors, WS2 is expected to have good conduction for both electrons and holes, but p-type WS2 transistors have been difficult to realize due to the relatively deep valence band and the presence of mid-gap states with conventional metal contacts. Here, we report topological semimetal NbP as p-type electrical contacts to bilayer WS2 with up to 5.8 microamperes per micron hole current at room temperature; this is the highest to date for sub 2 nm thin WS2 and more than 50 times larger than with metals like Ni or Pd. The p-type conduction is enabled by the simultaneously high work function and low density of states of the NbP, which reduce Fermi level pinning. These contacts are sputter-deposited at room temperature, an approach compatible with CMOS fabrication, a step towards enabling ultrathin WS2 semiconductors in future nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2024

Quantitative determination of twist angle and strain in Van der Waals moir\'e superlattices

Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moir\'es. The high lateral spatial resolution provided by these techniques enables extracting the moir\'e lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezos which drive the scanning probe, and thermally-driven slow relative drift between probe and sample, produce systematic errors in the extraction of lattice vectors. In this Letter, we identify the errors and provide a protocol to correct for them. Applying this protocol to an ensemble of ten successive scans of near-magic-angle twisted bilayer graphene, we are able to reduce our errors in extracting lattice vectors to less than 1%. This translates to extracting twist angles with a statistical uncertainty less than 0.001{\deg} and uniaxial heterostrain with uncertainty on the order of 0.002%.

cond-mat.mtrl-sci↗

arXiv2024

Deterministic fabrication of graphene hexagonal boron nitride moir\'e superlattices

The electronic properties of moir\'e heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30 degree ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0 degree, not 30 degree, relative twist angle. We confirm this alignment by torsional force microscopy (TFM) of the graphene/hBN moir\'e on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, non-aligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moir\'e heterostructures.

cond-mat.mes-hall↗

arXiv2024

Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moir\'e interfaces

New properties can arise at van der Waals (vdW) interfaces hosting a moir\'e pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moir\'e period and emergent properties. Characterizing the rate of interlayer twist/strain relaxation during thermal annealing is critical to establish a thermal budget for vdW heterostructure construction and may provide a route to improve the homogeneity of the interface or to control its final state. Here, we characterize the spatial and temporal dependence of interfacial twist and strain relaxation in marginally-twisted hBN/hBN interfaces heated under conditions relevant to vdW heterostructure assembly and typical sample annealing. We find that the ferroelectric hBN/hBN moir\'e relaxes minimally during annealing in air at typical assembly temperatures of 170{\deg}C. However, at 400{\deg}C, twist angle relaxes significantly, accompanied by a decrease in spatial uniformity. Uniaxial heterostrain initially increases and then decreases over time, becoming increasingly non-uniform in direction. Structural irregularities such as step edges, contamination bubbles, or contact with the underlying substrate result in local inhomogeneity in the rate of relaxation.

cond-mat.mtrl-sci↗

arXiv2024

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.

physics.app-ph↗

arXiv2023

Torsional Force Microscopy of Van der Waals Moir\'es and Atomic Lattices

In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moir\'e superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult, hence determining that twist angle and mapping its spatial variation is very important. Techniques have emerged to do this by imaging the moir\'e, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that Torsional Force Microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of Van der Waals stacks on multiple length scales: the moir\'es formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN), and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an AFM cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moir\'e superlattices and crystallographic orientation of VdW flakes to support predictable moir\'e heterostructure fabrication.

cond-mat.mtrl-sci↗