arXiv subjects

Maciej Olszewski

Publications and source records attributed to Maciej Olszewski.

4 recordsLinked to original sources

arXiv2026

Evidence for a low-gap component in compressively stressed niobium thin films

We investigate the microwave response of sputtered Nb films as a function of biaxial film stress. Although transport measurements show nearly identical superconducting transition temperatures ($9.0\pm 0.2$K) and residual resistance ratios across the stress series, microwave resonators fabricated from highly compressive films exhibit enhanced temperature-dependent loss and larger frequency shifts. A conventional single-phase Mattis--Bardeen description yields an effective critical temperature of $2.4\pm0.2$K, approximately a factor of four below the value obtained from transport measurements. We show that the data are instead consistent with the presence of an additional low-gap component whose contribution increases with compressive stress. These results show that conventional transport measurements can overlook stress-dependent low-energy excitations that strongly influence microwave performance.

quant-ph↗

arXiv2025

Control of out-of-plane anti-damping spin torque with a canted ferromagnetic spin source

To achieve efficient anti-damping switching of nanoscale magnetic memories with perpendicular magnetic anisotropy using spin-orbit torque requires that the anti-damping spin-orbit torque have a strong out-of-plane component. The spin anomalous Hall effect and the planar Hall effect spin current produced by a ferromagnetic layer are candidate mechanisms for producing such an out-of-plane anti-damping torque, but both require that the magnetic moment of the spin source layer be canted partly out of the sample plane at zero applied magnetic field. Here we demonstrate such a canted configuration for a ferromagnetic SrRuO3 layer and we characterize all vector components of the torque that it produces, including non-zero out-of-plane anti-damping torques. We verify that the out-of-plane spin component can be tuned by the orientation of magnetic moment, with significant contributions from both the spin anomalous Hall effect and the planar Hall effect spin current.

cond-mat.mes-hall↗

arXiv2025

Turn-on of Current-Induced Spin Torque upon Noncollinear Antiferromagnetic Ordering in Delafossite PdCrO2

We report measurements of the current-induced spin torque produced by the delafossite antiferromagnet PdCrO2 and acting on an adjacent ferromagnetic permalloy layer. The spin torque increases strongly as the temperature is reduced through the Neel temperature, when the PdCrO2 transitions from a paramagnetic phase to a noncollinear antiferromagnetic state. This result is qualitatively consistent with density functional theory calculations regarding how spin-current generation changes upon antiferromagnetic ordering in PdCrO2.

cond-mat.mtrl-sci↗

arXiv2025

Low barrier ZrO$_x$-based Josephson junctions

The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest quality oxide tunnel barrier and is often used in niobium-based junctions. Here we propose ZrO$_x$ as an alternative tunnel barrier material for Nb electrodes. We theoretically estimate that zirconium oxide has excellent oxygen retention properties and experimentally verify that there is no significant oxygen diffusion leading to NbO$_x$ formation in the adjacent Nb electrode. We develop a top-down, subtractive fabrication process for Nb/Zr-ZrO$_x$/Nb Josephson junctions, which enables scalability and large-scale production of superconducting electronics. Using cross sectional scanning transmission electron microscopy, we experimentally find that depending on the Zr thickness, ZrO$_x$ tunnel barriers can be fully crystalline with chemically abrupt interfaces with niobium. Further analysis using electron energy loss spectroscopy reveals that ZrO$_x$ corresponds to tetragonal ZrO$_2$. Room temperature characterization of fabricated junctions using Simmons' model shows that ZrO$_2$ exhibits a low tunnel barrier height, which is promising in merged-element transmon applications. Low temperature transport measurements reveal sub-gap structure, while the low-voltage sub-gap resistance remains in the megaohm range.

cond-mat.supr-con↗