arXiv subjects

M. Birowska

Publications and source records attributed to M. Birowska.

7 recordsLinked to original sources

arXiv2026

Configuration-dependent electronic and optical properties of 2D Mo$_{1-x}$W$_x$S$_2$ alloys across the full composition range

Here we analyze multiple symmetry-inequivalent atomic configurations across the entire composition range of the isovalent and isostructural Mo$_x$W$_{1-x}$S$_2$ alloy using density-functional theory and Monte Carlo simulations. Our results show that although structural stability and energetics are largely composition-driven, the electronic and optical properties exhibit configuration dependence, with local atomic arrangements critically shaping band-edge splitting, valley structure, effective-mass anisotropy, and optical selection rules. In contrast to the pristine monolayers, even in the absence of spin-orbit coupling (SOC), splitting of the band edges at the $K$ point is observed across the entire composition range. In particular, while the valence-band maximum (VBM) remains largely robust, the conduction-band minimum (CBM) shows strong configuration-dependent splitting from few meV up to hundredths of meV. This behaviour leads to a non-trivial dependence of the valley energetics. Configurations with well-separated conduction bands support additional optically active transitions beyond the conventional A and B excitons in MoS$_2$ and WS$_2$ monolayers, whereas nearly degenerate cases exhibit a reduced number of allowed transitions, observed for specific configurations at $x = 1/3$ and $x = 2/3$. These results demonstrate that the number and character of optically active transitions are governed not only by composition, but also by the microscopic arrangement of atoms. Moreover, we found the hole effective masses at the VBM show configuration-dependent anisotropy, reflecting sensitivity to local symmetry breaking and implying direction-dependent transport.

cond-mat.mtrl-sci↗

arXiv2024

Colossal magneto-excitonic effects in 2D van der Waals magnetic semiconductor CrSBr

2D magnetic semiconductors, which intrinsically couple a rich landscape of magnetic orders with tightly bound electron-hole pairs (excitons), present an exciting platform to investigate the interplay between optical and magnetic phenomena at the atomic scale. In such systems, the strength of magneto-optical effects determines how deeply the magnetic properties can be revealed. Here, we report the observation of remarkably strong magneto-excitonic effects in the 2D magnetic semiconductor CrSBr that allow probing its magnetic order with unprecedented sensitivity. By investigating optical transitions above the fundamental exciton energy, we discover a massive spectral shift approaching 100 meV under applied magnetic fields - an order of magnitude larger than previously observed magneto-excitonic responses. Our comprehensive magneto-optical experiments accompanied by detailed DFT calculations indicate the possible origin of the transitions exhibiting such intriguing behavior. These findings open avenues for exploiting magneto-excitonic phenomena at newly accessible regimes, enabling novel opto-spintronic applications previously limited by weak magnetic responses.

cond-mat.mtrl-sci↗

arXiv2023

Optical markers of magnetic phase transition in CrSBr

Here, we investigate the role of the interlayer magnetic ordering of CrSBr in the framework of $\textit{ab initio}$ calculations and by using optical spectroscopy techniques. These combined studies allow us to unambiguously determine the nature of the optical transitions. In particular, photoreflectance measurements, sensitive to the direct transitions, have been carried out for the first time. We have demonstrated that optically induced band-to-band transitions visible in optical measurement are remarkably well assigned to the band structure by the momentum matrix elements and energy differences for the magnetic ground state (A-AFM). In addition, our study reveals significant differences in electronic properties for two different interlayer magnetic phases. When the magnetic ordering of A-AFM to FM is changed, the crucial modification of the band structure reflected in the direct-to-indirect band gap transition and the significant splitting of the conduction bands along the $\Gamma-Z$ direction are obtained. In addition, Raman measurements demonstrate a splitting between the in-plane modes $B^2_{2g}$/$B^2_{3g}$, which is temperature dependent and can be assigned to different interlayer magnetic states, corroborated by the DFT+U study. Moreover, the $B^2_{2g}$ mode has not been experimentally observed before. Finally, our results point out the origin of interlayer magnetism, which can be attributed to electronic rather than structural properties. Our results reveal a new approach for tuning the optical and electronic properties of van der Waals magnets by controlling the interlayer magnetic ordering in adjacent layers.

cond-mat.mtrl-sci↗

arXiv2022

Controlling magnetic exchange and anisotropy by non-magnetic ligand substitution in layered MPX3 (M = Ni, Mn; X = S, Se)

Recent discoveries in two-dimensional (2D) magnetism have intensified the investigation of van der Waals (vdW) magnetic materials and further improved our ability to tune their magnetic properties. Tunable magnetism has been widely studied in antiferromagnetic metal thiophosphates MPX3. Substitution of metal ions M has been adopted as an important technique to engineer the magnetism in MPX3. In this work, we have studied the previously unexplored chalcogen X substitutions in MPX3 (M = Mn/Ni; X = S/Se). We synthesized the single crystals of MnPS3-xSex (0 < x < 3) and NiPS3-xSex (0 < x < 1.3) and investigated the systematic evolution of the magnetism with varying x. Our study reveals the effective tuning of magnetic interactions and anisotropies in both MnPS3 and NiPS3 upon Se substitution. Such efficient engineering of the magnetism provides a suitable platform to understand the low-dimensional magnetism and develop future magnetic devices.

cond-mat.mtrl-sci↗

arXiv2016

Influence of the different strains components on the uniaxial magnetic anisotropy constants for (Ga,Mn)As bulk system: a First-Principles Study

We present a computational study of the magnetic anisotropy energy for a given concentration of the Mn ions in the GaAs host, in the framework of the density functional theory. We focus on the influence of a different kind of strains on the uniaxial magnetic anisotropy constants $K_1$ and $K_2$, which reflect the magnetic anisotropy energy out- and in- (001) plane, respectively. We have shown that the general trends for the applied biaxial strain on anisotropy constants are consistent with the experimental data. We have predicted the critical strains, for which the magnetization vector changes its direction. Our results have shown that it is not possible to modify considerably the uniaxial magnetic anisotropy constants, exposing (Ga,Mn)As to hydrostatic pressure of a magnitude reasonable from experimental point of view.

cond-mat.mtrl-sci↗

arXiv2016

Energetic, electronic and magnetic properties of Mn-dimers on reconstructed (001) GaAs surfaces

We study energetic, magnetic, and electronic properties of diluted substitutional Mn-pairs on the reconstructed $(001)$ GaAs surfaces. The studies are based on first-principles calculations in the framework of the density functional theory. We demonstrate that the stability of the systems strongly depends on the position, orientation, and the distance between the Mn-atoms constituting the pair. Independently of the considered surface reconstruction pattern, the Mn-pairs with Mn-atoms being the nearest neighbors (NN) on cationic sublattice turn out to be energetically more favorable than the pairs with the larger distance between the Mn-atoms. However, the preferential build-up orientation of the Mn-NN-pair depends on the surface reconstruction and is parallel either to $[110]$ or $[1\bar{1}0]$ crystallographic direction. We reveal also the mechanisms of the magnetic ordering of Mn-NN-pairs. The Mn-NN-pairs along the $[110]$ crystallographic direction exhibit always ferromagnetic alignment of Mn spins, whereas the spins in the Mn-NN-pairs along $[1\bar{1}0]$ direction are mostly anti-ferromagnetically aligned. In the electronic structure of the systems containing Mn-pairs with ferromagnetically aligned spins, we observe the valence band hole states in the neighborhood of Fermi energy. This indicates that the surface ferromagnetism in this prototype of dilute magnetic semiconductors can be explained in terms of the $p$-$d$ Zener model.

cond-mat.mtrl-sci↗

arXiv2012

Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors

It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.

cond-mat.mtrl-sci↗