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arXiv · 1202.3295

Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors

M. Birowska·C. Sliwa·J. A. Majewski·T. Dietl
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Abstract

It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.

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M. Birowska, C. Sliwa, J. A. Majewski, T. Dietl. 2012-02-15. Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors. https://doi.org/10.1103/physrevlett.108.237203

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