arXiv subjects

Linlin Wei

Publications and source records attributed to Linlin Wei.

7 recordsLinked to original sources

arXiv2024

Impact of Thermal Effects on the Current-Tunable Electrical Transport in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$

In the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$, a colossal magnetoresistance (CMR) is observed only when a magnetic field is applied along the magnetic hard axis ($\mathbf{H}\parallel c$). This phenomenon suggests an unconventional CMR mechanism potentially driven by the interplay between magnetism, topological band structure, and/or chiral orbital currents (COC). By comparing electrical resistance measurements using continuous direct currents and pulse currents, we found that the current-induced insulator-metal transition, supporting the COC-driven CMR mechanism, is likely a consequence of Joule heating effects. First-principles calculations reveal a pronounced band gap reduction upon tilting the magnetic moments toward the $c$-axis, accompanied by increased carrier concentration and Fermi velocity. Combining spin orientation-dependent electronic structure with Boltzmann transport theory, the calculated electrical resistance closely reproduces the CMR observed experimentally. These findings suggest that the CMR in Mn$_3$Si$_2$Te$_6$ stems primarily from band gap reduction induced by partial polarization of magnetic moments along the magnetic hard axis.

cond-mat.mtrl-sci↗

arXiv2024

Dial-insight: Fine-tuning Large Language Models with High-Quality Domain-Specific Data Preventing Capability Collapse

The efficacy of large language models (LLMs) is heavily dependent on the quality of the underlying data, particularly within specialized domains. A common challenge when fine-tuning LLMs for domain-specific applications is the potential degradation of the model's generalization capabilities. To address these issues, we propose a two-stage approach for the construction of production prompts designed to yield high-quality data. This method involves the generation of a diverse array of prompts that encompass a broad spectrum of tasks and exhibit a rich variety of expressions. Furthermore, we introduce a cost-effective, multi-dimensional quality assessment framework to ensure the integrity of the generated labeling data. Utilizing a dataset comprised of service provider and customer interactions from the real estate sector, we demonstrate a positive correlation between data quality and model performance. Notably, our findings indicate that the domain-specific proficiency of general LLMs can be enhanced through fine-tuning with data produced via our proposed method, without compromising their overall generalization abilities, even when exclusively domain-specific data is employed for fine-tuning.

cs.CL↗

arXiv2017

Touching is believing: interrogating organometal halide perovskite solar cells at the nanoscale via scanning probe microscopy

Halide perovskite solar cells based on CH3NH3PbI3 and related materials have emerged as the most exciting development in the next generation photovoltaic technologies, yet the microscopic phenomena involving photo-carriers, ionic defects, spontaneous polarization, and molecular vibration and rotation interacting with numerous grains, grain boundaries, and interfaces are still inadequately understood. In fact, there is still need for an effective method to interrogate the local photovoltaic properties of halide perovskite solar cells that can be directly traced to their microstructures on one hand and linked to their device performance on the other hand. In this perspective, we propose that scanning probe microscopy techniques have great potential to realize such promises at the nanoscale, and highlight some of the recent progresses and challenges along this line of investigation toward local probing of photocurrent, work function, ionic activities, polarization switching, and chemical degradation. We also emphasize the importance of multi-modality imaging, in-operando scanning, big data analysis, and multidisciplinary collaboration for further studies toward fully understanding of these complex systems.

cond-mat.mtrl-sci↗

arXiv2017

Observation of three superconducting transitions in the pressurized CDW-bearing compound TaTe2

Transition metal dichalcogenides host a wide variety of lattice and electronic structures, as well as corresponding exotic physical properties, especially under certain tuning conditions. Here, we are the first to report the observation of pressure-induced three superconducting transitions in TaTe2, a charge density wave (CDW) - bearing layered transition-metal dichalcogenide that is metallic but not superconducting at ambient pressure. We find that its CDW state can be easily suppressed upon increasing pressure up to ~ 1 GPa. A superconducting state then emerges from the suppressed CDW state and persists to the pressure about 7 GPa. Unexpectedly, another superconducting state appears at ~ 11 GPa within the same monoclinic (M) structure of its ambient-pressure one. Upon further compression to 21 GPa, a third superconducting state with higher Tc appears from a high-pressure (HP) phase. Our experimental results suggest that the pressure-induced three superconducting transitions in TaTe2 are respectively driven by the suppression of the CDW state, the change of the angle in the M phase and the transition of M-to-HP phase. These results demonstrate not only the versatile nature of this correlated electron system, but also the first experimental example that shows the pressure-induced evolution from a CDW state to three superconducting states driven by different mechanisms.

cond-mat.supr-con↗

arXiv2017

Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application

The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at reverse biases. In this letter, we report for the first time another type of IR-RS that is related to the built-in homojunction. The IR-RS study was usually limited to macroscopic samples with micron-order pad-type electrodes, while this work is on NiO nanodots fabricated with ultrathin anodic-aluminum-oxide templates and acting as nanoscaled analogs of real devices. The NiO nanodots show high storage density and high uniformity, and the IR-RS behaviors are of good device performances in terms of retention, endurance, switching ratio and rectification ratio. The feasibility of the IR-RS for selection device-free memory application has been demonstrated, by calculating the maximum crossbar array size under the worst-case scenario to be 3 Mbit.

cond-mat.mes-hall↗

arXiv2016

An Anomalous Circular Photogalvanic Effect in the Weyl Semimetal TaAs

Weyl semimetal (WSM) is expected to be an ideal spintronic material owing to its spin currents carried by the bulk and surface states with spin-momentum locking. A photocurrent generation in noncentrosymmetric WSM was also predicted owing to its broken inversion symmetry and linear energy dispersion which are unique to Weyl systems. In our recent measurements, the circular photogalvanic effect (CPGE) has been demonstrated in WSM of TaAs. The CPGE voltage is proportional to the helicity of the incident light and reverses its direction on changing the radiation helicity from left handed to right handed, a periodical oscillation therefore appears following with the alteration of optical polarization. We herein attribute the CPGE to the asymmetric optical excitation of the Weyl cone, which could result in an asymmetric distribution of photoexcited carriers in momentum space according to an optical spin selection rule.

cond-mat.str-el↗

arXiv2015

Ultrafast transmission electron microscopy on dynamic process of a CDW transition in 1T-TaSe2

Four-dimensional ultrafast transmission electron microscopy (4D-UTEM) measurements reveal a rich variety of structural dynamic phenomena at a phase transition in the charge-density-wave (CDW) 1T-TaSe2. Through the photoexcitation, remarkable changes on both the CDW intensity and orientation are clearly observed associated with the transformation from a commensurate (C) into an incommensurate (IC) phase in a time-scale of about 3 ps. Moreover, the transient states show up a notable "structurally isosbestic point" at a wave vector of qiso where the C and IC phases yield their diffracting efficiencies in an equally ratio. This fact demonstrates that the crystal planes parallel to qiso adopts visibly common structural features in these two CDW phases. The second-order characters observed in this nonequilibrium phase transition have been also analyzed based on the time-resolved structural data.

cond-mat.str-el↗