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arXiv · 2412.01518

Impact of Thermal Effects on the Current-Tunable Electrical Transport in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$

Yiyue Zhang·Xin Jin·ZeYu Li·Kunya Yang·Linlin Wei·Xinrun Mi·Aifeng Wang·Xiaoyuan Zhou·Xiaolong Yang·Yisheng Chai·Mingquan He
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Abstract

In the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$, a colossal magnetoresistance (CMR) is observed only when a magnetic field is applied along the magnetic hard axis ($\mathbf{H}\parallel c$). This phenomenon suggests an unconventional CMR mechanism potentially driven by the interplay between magnetism, topological band structure, and/or chiral orbital currents (COC). By comparing electrical resistance measurements using continuous direct currents and pulse currents, we found that the current-induced insulator-metal transition, supporting the COC-driven CMR mechanism, is likely a consequence of Joule heating effects. First-principles calculations reveal a pronounced band gap reduction upon tilting the magnetic moments toward the $c$-axis, accompanied by increased carrier concentration and Fermi velocity. Combining spin orientation-dependent electronic structure with Boltzmann transport theory, the calculated electrical resistance closely reproduces the CMR observed experimentally. These findings suggest that the CMR in Mn$_3$Si$_2$Te$_6$ stems primarily from band gap reduction induced by partial polarization of magnetic moments along the magnetic hard axis.

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Yiyue Zhang, Xin Jin, ZeYu Li, Kunya Yang, Linlin Wei, Xinrun Mi, Aifeng Wang, Xiaoyuan Zhou, Xiaolong Yang, Yisheng Chai, Mingquan He. 2024-12-02. Impact of Thermal Effects on the Current-Tunable Electrical Transport in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$. https://doi.org/10.1103/8k1l-qd7b

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