arXiv subjects

Li-Shu Wang

Publications and source records attributed to Li-Shu Wang.

3 recordsLinked to original sources

arXiv2026

Electric field switching of chiral phonons

Lattice vibrations carrying angular momentum, known as chiral phonons, have emerged as a promising route to control and understand complex material properties, yet their deterministic manipulation remains largely unexplored. Here we demonstrate electric-field switching of phonon angular momentum in the technologically relevant ferroelectric BaTiO3. Using circularly dichroic resonant inelastic X-ray scattering (CD-RIXS) at the oxygen K edge, we directly probe the phonon angular momentum and compare the measured dichroism with first-principles predictions of phonon-mode chirality. We find excellent agreement, revealing a momentum-dependent circular-dichroism contrast that exhibits a reversible gyroelectric effect, stable for at least 15 hours. Our results establish a robust mechanism for non-volatile control of chiral phonons and point towards new opportunities for phonon-based information and energy technologies.

cond-mat.mtrl-sci↗

arXiv2026

In-situ Straining of Epitaxial Freestanding Ferroic Films by a MEMS Device

Mechanical strain can be used to control physical properties in materials. The experimental investigation of strain-induced effects at the nanoscale is of importance not only for its fundamental aspects, but also for the development of device applications. Transmission X-ray microscopy is a particularly well-suited technique for nanoscale imaging of magnetic materials, but its compatibility with in-situ mechanical straining of samples is limited. In this work, we present a setup for applying tailored in-situ mechanical strains to freestanding thin films by means of a micro electromechanical system (MEMS) actuator. We then present a proof-of-concept experiment in which a freestanding 80 nm thick (001) BiFeO3 multiferroic thin film is strained with the MEMS device, allowing us to control the coupled ferroelectric/spin cycloidal configuration.

cond-mat.mes-hall↗

arXiv2025

Atomic-Scale Roughness of Freestanding Oxide Membranes Revealed by Electron Ptychography

Freestanding oxide films offer significant potential for integrating exotic quantum functionalities with semiconductor technologies. However, their performance is critically limited by surface roughness and interfacial imperfection caused by dangling bonds, which disrupt coherent interactions and suppress quantum phenomena at heterointerfaces. To address the challenge of structural characterization of surfaces and interfaces, we develop a metrological approach achieving atomic-scale precision in mapping the topography of both free surfaces and buried interfaces within ultrathin oxide heterostructures leveraging three-dimensional structures reconstructed from multislice electron ptychography. This method also allows for counting the number of atoms, even including light elements such as oxygen, along the electron trajectory in electron microscopy, leading to the identification of surface termination in oxide films. The planar-view of measurement geometry, allowing for large field-of-view imaging, provides remarkably rich information and high statistics about the atomic-scale structural inhomogeneities in freestanding membranes. This quantitative analysis provides unprecedented capabilities for correlating structural imperfection with quantum device performance, offering critical insights for engineering robust heterointerfaces in next-generation oxide electronics.

cond-mat.mtrl-sci↗