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Lei Shen

Publications and source records attributed to Lei Shen.

125 records · Page 7Linked to original sources

Speeding Up Neural Machine Translation Decoding by Cube Pruning

Although neural machine translation has achieved promising results, it suffers from slow translation speed. The direct consequence is that a trade-off has to be made between translation quality and speed, thus its performance can not come into full play. We apply cube pruning, a popular technique to speed up dynamic programming, into neural machine translation to speed up the translation. To construct the equivalence class, similar target hidden states are combined, leading to less RNN expansion operations on the target side and less \$\mathrm{softmax}\$ operations over the large target vocabulary. The experiments show that, at the same or even better translation quality, our method can translate faster compared with naive beam search by \$3.3\times\$ on GPUs and \$3.5\times\$ on CPUs.

cs.CL↗

Efficient Charge-Spin Conversion and Magnetization Switching though Rashba Effect at Topological Insulator/Ag Interface

We report the observation of efficient charge-to-spin conversion in the three-dimensional topological insulator (TI) Bi2Se3 and Ag bilayer by the spin-torque ferromagnetic resonance technique. The spin orbit torque ratio in the Bi2Se3/Ag/CoFeB heterostructure shows a significant enhancement as the Ag thickness increases to ~2 nm and reaches a value of 0.5 for 5 nm Ag, which is ~3 times higher than that of Bi2Se3/CoFeB at room temperature. The observation reveals the interfacial effect of Bi2Se3/Ag exceeds that of the topological surface states (TSS) in the Bi2Se3 layer and plays a dominant role in the charge-to-spin conversion in the Bi2Se3/Ag/CoFeB system. Based on the first-principles calculations, we attribute our observation to the large Rashba-splitting bands which wrap the TSS band and has the same net spin polarization direction as TSS of Bi2Se3. Subsequently, we demonstrate for the first time the Rashba induced magnetization switching in Bi2Se3/Ag/Py with a low current density of 5.8 X 10^5 A/cm2.

cond-mat.mtrl-sci↗

Large valley splitting in monolayer WS$_2$ by proximity coupling to an insulating antiferromagnetic substrate

Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides by magnetic proximity coupling to an insulating antiferromagnetic substrate. As an example, we perform first-principles calculations to investigate the electronic structures of monolayer WS$_2$ on the MnO(111) surface. Our calculation results suggest that a large valley splitting of 214 meV, which corresponds to a Zeeman magnetic field of 1516 T, is induced in the valence band of monolayer WS$_2$. The magnitude of valley splitting relies on the strength of interfacial orbital hybridization, and can be continually tuned by applying an external out-of-plane pressure and in-plane strain. More interestingly, we find that both spin and valley index will flip when the magnetic ordering of MnO is reversed. Besides, owing to the sizeable Berry curvature and time-reversal symmetry breaking in the WS$_2$/MnO heterostructure, a spin and valley polarized anomalous Hall current can be generated in the presence of an in-plane electric field, which allow one to detect valleys by the electrical approach. Our results shed light on the realization of valleytronic devices using the antiferromagnetic insulator as the substrate.

cond-mat.mtrl-sci↗

Magnetic Properties of Transition-Metal Adsorbed ot-Phosphorus Monolayer: A First-principles and Monte Carlo Study

Using the first-principles and Monte Carlo methods, here we systematically study magnetic properties of monolayer octagonal-tetragonal phosphorus with 3d transition-metal (TM) adatoms. Different from the puckered hexagonal black phosphorus monolayer (phosphorene or $α$-P), the octagonal-tetragonal phase of 2D phosphorus (named as ot-P or $ε$-P in this article) is buckled with octagon-tetragon structure. Our calculations show that all TMs, except the closed-shell Zn atom, are able to strongly bind onto monolayer $ot$-P with significant binding energies. Local magnetic moments (up to 6 $μ$B) on adatoms of Sc, Ti, V, Cr, Mn, Fe and Co originate from the exchange and crystal-field splitting of TM 3d orbitals. The magnetic coupling between localized magnetic states of adatoms is dependent on adatomic distances and directions. Lastly, the uniformly magnetic order is investigated to screening two-dimensional dilute ferromagnets with high Curie temperature for applications of spintronics. It is found that ot-P with V atoms homogeneously adsorbed at the centre of octagons with a concentration of 5% has the most stable ferromagnetic ground state. Its Curie temperature is estimated to be 173 K using the Monte Carlo method.

cond-mat.mtrl-sci↗

Unveiling the role of Co-O-Mg bond in magnetic anisotropy of Pt/Co/MgO using atomically controlled deposition and in-situ electrical measurement

Despite the crucial role of interfacial perpendicular magnetic anisotropy in Co(Fe)/MgO based magnetic tunnel junction, the underlying mechanism is still being debated. Here, we report an anatomical study of oxygen and Mg effect on Pt/Co bilayers through repeated in-situ anomalous Hall effect measurements, controlled oxygen exposure and Mg deposition in an ultrahigh vacuum system. We found that chemisorbed oxygen not only quenches the effective magnetic moment of the Co surface layer, but also softens its magnetic anisotropy. However, a subsequent Mg dusting on the oxygen pre-exposed Pt/Co surface can recover the magnetic anisotropy. The ab initio calculations on the exchange splitting and orbital hybridization near the Fermi level give a clear physical explanation of the experimental observations. Our results suggest that Co(Fe)-O-M bond plays a more important role than the widely perceived Co(Fe)-O bond does in realizing interfacial perpendicular magnetic anisotropy in Co(Fe)/MgO heterostructures.

cond-mat.mtrl-sci↗

Empirical Evaluation of RNN Architectures on Sentence Classification Task

Recurrent Neural Networks have achieved state-of-the-art results for many problems in NLP and two most popular RNN architectures are Tail Model and Pooling Model. In this paper, a hybrid architecture is proposed and we present the first empirical study using LSTMs to compare performance of the three RNN structures on sentence classification task. Experimental results show that the Max Pooling Model or Hybrid Max Pooling Model achieves the best performance on most datasets, while Tail Model does not outperform other models.

cs.CL↗

Electronic and Transport Property of Phosphorene Nanoribbon

By combining density functional theory and nonequilibrium Green's function, we study the electronic and transport properties of monolayer black phosphorus nanoribbons (PNRs). First, we investigate the band-gap of PNRs and its modulation by the ribbon width and an external transverse electric feld. Our calculations indicate a giant Stark effect in PNRs, which can switch on transport channels of semiconducting PNRs under low bias, inducing an insulator-metal-transition. Next, we study the transport channels in PNRs via the calculations of the current density and local electron transmission pathway. In contrast to graphene and MoS_2 nanoribbons, the carrier transport channels under low bias are mainly located in the interior of both armchair and zigzag PNRs, and immune to a small amount of edge defects. Lastly, a device of the PNR-based dual-gate feld-effect-transistor, with high on/off-ratio of 10^3, is proposed based on the giant electric feld tuning effect.

cond-mat.mes-hall↗

Phosphorene and Transition Metal Dichalcogenide 2D Heterojunctions: Application in Excitonic Solar Cells

Using the first-principles GW-Bethe-Salpeter equation method, here we study the excited-state properties, including quasi-particle band structures and optical spectra, of phosphorene, a two-dimensional (2D) atomic layer of black phosphorus. The quasi-particle band gap of monolayer phosphorene is 2.15 eV and its optical gap is 1.6 eV, which is suitable for excitonic thin film solar cell applications. Next, this potential application is analysed by considering type-II heterostructures with single layered phosphorene and transition metal dichalcogenides (TMDs). These heterojunctions have a potential maximum power conversion efficiency of up to 12\%, which can be further enhanced to 20\% by strain engineering. Our results show that phosphorene is not only a promising new material for use in nanoscale electronics, but also in optoelectronics.

cond-mat.mtrl-sci↗

Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other hand, the calculated spin injection efficiencies of Ni/Cu/Graphene and Ni/Graphite/Graphene junctions are low, due to the spin conductance mismatch. Further examination on the electronic structure of the system reveals that the high spin injection efficiency in the presence of a tunnel barrier is due to its asymmetric effects on the two spin states of graphene.

cond-mat.mtrl-sci↗

Experimental demonstration of longitudinal beam phase space linearizer in a free-electron laser facility by corrugated structures

Removal of residual linear energy chirp and intrinsic nonlinear energy curvature in the relativistic electron beam from radiofrequency linear accelerator is of paramount importance for efficient lasing of a high-gain free-electron laser. Recently, it was theoretically and experimentally demonstrated that the longitudinal wakefield excited by the electrons itself in the corrugated structure allows for precise control of the electron beam phase space. In this Letter, we report the first utilization of a corrugated structure as beam linearizer in the operation of a seeded free-electron laser driven by a 140 MeV linear accelerator, where a gain of ~10,000 over spontaneous emission was achieved at the second harmonic of the 1047 nm seed laser, and a free-electron laser bandwidth narrowing by about 50% was observed, in good agreement with the theoretical expectations.

physics.acc-ph↗

Single-shot measurement of free-electron laser polarization at SDUV-FEL

In this paper, a division-of-amplitude photopolarimeter (DOAP) for measuring the polarization state of free-electron laser (FEL) pulse is described. The incident FEL beam is divided into four separate beams, and four Stokes parameters can be measured in a single-shot. In the crossed-planar undulators experiment at Shanghai deep ultraviolet FEL test facility, this DOAP instrument constructed in house responses accurately and timely while the polarization-state of fully coherent FEL pulses are switched, which is helpful for confirming the crossed-planar undulators technique for short-wavelength FELs.

physics.acc-ph↗

Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction

Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we investigate thermal stability (both structure and magnetization) and the electric field control of magnetic anisotropy on Co2FeAl (CFA)/MgO. A phase diagram of structural thermal stability of the CFA/MgO interface is illustrated. An interfacial perpendicular-anisotropy, coming from the Fe-O orbital hybridization, provides high magnetic thermal stability and a low stray field. We find an electric-field-induced giant modification of such perpendicular-anisotropy via a great magnetoelectric effect (the anisotropy energy coefficient beta~10-7 erg/V cm). Our spin electronic-structure and non-collinear transport calculations indicate high spin-polarized interfacial states and good magnetoresistance properties of CFA/MgO/CFA perpendicular magnetic tunnel junctions.

cond-mat.mtrl-sci↗

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon

A two-step doping process, magnetic followed by charge or vice versa, is required to produce insulating massive surface states in topological insulators for many physics and device applications. Using first-principles calculations, we demonstrate here simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3. Carbon substitution for Se (CSe) results in an opening of a sizable surface Dirac gap (53-85 meV), while the Fermi level (EF) remains inside the bulk gap and close to the Dirac point at moderate doping concentrations. The strong localization of 2p states of CSe favors spontaneous spin polarization via a p-p interaction and formation of ordered magnetic moments mediated by the surface state. Meanwhile, holes are introduced into the system by CSe. This dual function of carbon doping suggests a simple way to realize insulating massive topological surface states.

cond-mat.mtrl-sci↗

Beta-Ag2Te: A topological insulator with strong anisotropy

We present evidence of topological surface states in beta-Ag2Te through first-principles calculations and periodic quantum interference effect in single crystalline nanoribbon. Our first-principles calculations show that beta-Ag2Te is a topological insulator with a gapless Dirac cone with strong anisotropy. To experimentally probe the topological surface state, we synthesized high quality beta-Ag2Te nanoribbons and performed electron transport measurements. The coexistence of pronounced Aharonov-Bohm oscillations and weak Altshuler-Aronov-Spivak oscillations clearly demonstrates coherent electron transport around the perimeter of beta-Ag2Te nanoribbon and therefore the existence of metallic surface states, which is further supported by the temperature dependence of resistivity for beta-Ag2Te nanoribbons with different cross section areas. Highly anisotropic topological surface state of beta-Ag2Te suggests that the material is a promising material for fundamental study and future spintronic devices.

cond-mat.mes-hall↗

Data Storage: Review of Heusler Compounds

In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these devices, we also try to point out the challenges as well as possible solutions, of the current Heusler-based devices. We hope that this review would spark further investigation efforts into efficient incorporation of this eminent family of materials into data storage applications by fully arousing their intrinsic potential.

cond-mat.mtrl-sci↗

All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces

We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filtering efficiency in the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. A Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an architecture, of which the electronic structure and magnetotransport properties are systematically investigated by first principles approaches. Almost perfectly matched energy bands and Fermi surfaces between the all-Heusler electrode-spacer pair are found, indicating large interfacial spin-asymmetry, high spin-injection efficiency, and consequently high GMR ratio. Transport calculations further confirms the superiority of the all-Heusler architecture over the conventional Heusler/transition-metal(TM) structure by comparing their transmission coefficients and interfacial resistances of parallel conduction electrons, as well as the macroscopic current-voltage (I-V) characteristics. We suggest future theoretical and experimental efforts in developing novel all-Heusler GMR junctions for the read heads of the next generation high-density hard disk drives (HDDs).

cond-mat.mes-hall↗

Graphene-based spintronic components

A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of graphene nanoribbons, that nearly +-100% spin-polarized current can be generated in zigzag graphene nanoribbons (ZGNRs) and tuned by a source-drain voltage in the bipolar spin diode, in addition to magnetic configurations of the electrodes. This unusual transport property is attributed to the intrinsic transmission selection rule of the spin subbands near the Fermi level in ZGNRs. The simultaneous control of spin current by the bias voltage and the magnetic configurations of the electrodes provides an opportunity to implement a whole range of spintronics devices. We propose theoretical designs for a complete set of basic spintronic devices, including bipolar spin diode, transistor and logic gates, based on ZGNRs.

cond-mat.mtrl-sci↗