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Kyle Bushick

Publications and source records attributed to Kyle Bushick.

11 recordsLinked to original sources

Extracting Atomic Environments for Machine Learning Interatomic Potentials

In order to appropriately capture large-scale material features and emergent phenomena via atomistic simulations, such as Molecular Dynamics (MD), the system scale can range up to hundreds of millions of atoms. However, the force-field models that drive those simulations are generally trained with Density Functional Theory (DFT) reference data, limited to relatively small configurations on the order of 100s or 1000s of atoms. To compute DFT forces on atoms in regions of interest, for example for active-learning or on-the-fly training of interatomic potentials, one needs to extract a small set of atoms from the larger simulation box, and typically work with periodic boundary conditions for DFT. However, methods to select the shape and size of this extracted set of atoms, as well as to generate a potentially necessary passivating envelope, have not been systematically analyzed. In this work, we benchmark several techniques, including a generative diffusion-based artificial intelligence (AI) approach, for extracting atomic environments from large, bulk configurations and embedding them into smaller configurations suitable for DFT calculations with periodic boundary conditions. We test with a diverse set of material systems, which includes amorphous $\mathrm{SiO_2}$, Ta with screw dislocations, and molten C. We demonstrated a notably simple procedure, a method we refer to as deletions, yields superior performance over an array of alternative extraction methods.

cond-mat.mtrl-sci

Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes

The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron-phonon coupling and alloy disorder can induce bulk $C$ coefficients as large as $\sim10^{-31}$ cm$^6$/s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. This results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop.

cond-mat.mtrl-sci

Electron mobility of SnO2 from first principles

The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature- and doping-concentration dependence, and to elucidate the scattering mechanisms that limit transport. We include both electron-phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. We find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 10^18 cm^-3.

cond-mat.mtrl-sci

Strain Effects on Auger-Meitner Recombination in Silicon

We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger-Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect on the AMR rate. For most AMR processes, the application of strain increases the AMR rate. However, the recombination rate for the AMR process involving two holes and one electron is suppressed by 38% under tensile strain. We further analyze the specific phonon contributions that mediate the phonon-assisted AMR mechanism, demonstrating the increased anisotropy under strain. Our results indicate that the application of tensile strain increases the lifetime of minority electron carriers in p-type silicon, and can be leveraged to improve the efficiency of silicon devices.

cond-mat.mtrl-sci

Electron-phonon physics from first principles using the EPW code

EPW is an open-source software for $\textit{ab initio}$ calculations of electron-phonon interactions and related materials properties. The code combines density functional perturbation theory and maximally-localized Wannier functions to efficiently compute electron-phonon coupling matrix elements on ultra-fine Brillouin zone grids. This data is employed for predictive calculations of temperature-dependent properties and phonon-assisted quantum processes in bulk solids and low-dimensional materials. Here, we report on significant new developments in the code that occurred during the period 2016-2022, namely: a transport module for the calculation of charge carrier mobility and conductivity under electric and magnetic fields within the $\textit{ab initio}$ Boltzmann transport equation; a superconductivity module for the calculation of critical temperature and gap structure in phonon-mediated superconductors within the $\textit{ab initio}$ anisotropic multi-band Eliashberg theory; an optics module for calculations of phonon-assisted indirect transitions; a module for the calculation of small and large polarons without supercells using the $\textit{ab initio}$ polaron equations; and a module for calculating electron-phonon couplings, band structure renormalization, and temperature-dependent optical spectra using the special displacement method. For each capability, we outline the methodology and implementation, and provide example calculations. We describe recent code refactoring to prepare EPW for exascale architectures, we discuss efficient parallelization strategies, and report on extreme parallel scaling tests.

cond-mat.mtrl-sci

Hydrogen in Disordered Titania: Connecting Local Chemistry, Structure, and Stoichiometry through Accelerated Exploration

Hydrogen incorporation in native surface oxides of metal alloys often controls the onset of metal hydriding, with implications for materials corrosion and hydrogen storage. A key representative example is titania, which forms as a passivating layer on a variety of titanium alloys for structural and functional applications. These oxides tend to be structurally diverse, featuring polymorphic phases, grain boundaries, and amorphous regions that generate a disparate set of unique local environments for hydrogen. Here, we introduce a workflow that can efficiently and accurately navigate this complexity. First, a machine learning force field, trained on ab initio molecular dynamics simulations, was used to generate amorphous configurations. Density functional theory calculations were then performed on these structures to identify local oxygen environments, which were compared against experimental observations. Second, to classify subtle differences across the disordered configuration space, we employ a graph-based sampling procedure. Finally, local hydrogen binding energies are computed using exhaustive density functional theory calculations on representative configurations. We leverage this methodology to show that hydrogen binding energetics are described by local oxygen coordination, which in turn is affected by stoichiometry. Together these results imply that hydrogen incorporation and transport in TiO$_x$ can be tailored through compositional engineering, with implications for improving performance and durability of titanium-derived alloys in hydrogen environments.

cond-mat.mtrl-sci

Phonon-assisted Auger-Meitner Recombination in Silicon from First Principles

We present a consistent first-principles methodology to study both direct and phonon-assisted Auger-Meitner recombination (AMR) in indirect-gap semiconductors that we apply to investigate the microscopic origin of AMR processes in silicon. Our results are in excellent agreement with experimental measurements and show that phonon-assisted contributions dominate the recombination rate in both n-type and p-type silicon, demonstrating the critical role of phonons in enabling AMR. We also decompose the overall rates into contributions from specific phonons and electronic valleys to further elucidate the microscopic origins of AMR. Our results highlight potential pathways to modify the AMR rate in silicon via strain engineering.

cond-mat.mtrl-sci

Electron and hole mobility of rutile GeO$_2$ from first principles: an ultrawide-band-gap semiconductor for power electronics

Rutile germanium dioxide (r-GeO$_2$) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the device efficiency. We apply first-principles calculations based on density functional and density functional perturbation theory to investigate carrier-phonon coupling in r-GeO$_2$ and predict its phonon-limited electron and hole mobilities as a function of temperature and crystallographic orientation. The calculated carrier mobilities at 300 K are $\mu_{\text{elec},\perp \vec{c}}$=244 cm$^2$ V$^{-1}$ s$^{-1}$, $\mu_{\text{elec},||\vec{c}}$=377 cm$^2$ V$^{-1}$ s$^{-1}$, $\mu_{\text{hole},\perp \vec{c}}$=27 cm$^2$ V$^{-1}$ s$^{-1}$, and $\mu_{\text{hole},||\vec{c}}$=29 cm$^2$ V$^{-1}$ s$^{-1}$. At room temperature, carrier scattering is dominated by the low-frequency polar-optical phonon modes. The predicted Baliga figure of merit of n-type r-GeO$_2$ surpasses several incumbent semiconductors such as Si, SiC, GaN, and $\beta$-Ga$_2$O$_3$, demonstrating its superior performance in high-power electronic devices.

cond-mat.mtrl-sci

Optical properties of cubic boron arsenide

The ultrahigh thermal conductivity of boron arsenide makes it a promising material for next-generation electronics and optoelectronics. In this work, we report measured optical properties of cubic boron arsenide crystals including the complex dielectric function, refractive index, and absorption coefficient in the ultraviolet, visible, and near-infrared wavelength range. The data were collected at room temperature using spectroscopic ellipsometry as well as transmission and reflection spectroscopy. We further calculate the optical response using density functional and many-body perturbation theory, considering quasiparticle and excitonic corrections. The computed values for the direct and indirect band gaps (4.25 eV and 2.07 eV) agree well with the measured results (4.12 eV and 2.02 eV). Our findings contribute to the effort of using boron arsenide in novel electronic and optoelectronic applications that take advantage of its demonstrated ultrahigh thermal conductivity and predicted high ambipolar carrier mobility.

cond-mat.mtrl-sci

Boron Arsenide Heterostructures: Lattice-Matched Heterointerfaces, and Strain Effects on Band Alignments and Mobility

BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain effects on band alignments and carrier mobility, considering BAs as both a thin film and a substrate for lattice-matched materials. The results show that strain decreases the band gap independent of sign or direction. In addition, biaxial tensile strain increases the in-plane electron and hole mobilities by more than 60% compared to the unstrained values due to a reduction of the electron effective mass and of hole interband scattering. Moreover, BAs is shown to be nearly lattice-matched with InGaN and ZnSnN2, two important optoelectronic semiconductors with tunable band gaps by alloying and cation disorder, respectively. The results predict type-II band alignments and determine the absolute band offsets of these two materials with BAs. The combination of the ultra-high thermal conductivity and intrinsic p-type character of BAs, with its high electron and hole mobilities that can be further increased by tensile strain, as well as the lattice-match and the type-II band alignment with intrinsically n-type InGaN and ZnSnN2 demonstrate the potential of BAs heterostructures for electronic and optoelectronic devices.

cond-mat.mtrl-sci

Band structure and carrier effective masses of boron arsenide: effects of quasiparticle and spin-orbit coupling corrections

We determine the fundamental electronic and optical properties of the high-thermal-conductivity III-V semiconductor boron arsenide (BAs) using density functional and many body perturbation theory including quasiparticle and spin-orbit coupling corrections. We find that the fundamental band gap is indirect with a value of 2.049 eV, while the minimum direct gap has a value of 4.135 eV. We calculate the carrier effective masses and report smaller values for the holes than the electrons, indicating higher hole mobility and easier p-type doping. The small difference between the static and high frequency dielectric constants indicates that BAs is only weakly ionic. We also observe that the imaginary part of the dielectric function exhibits a strong absorption peak, which corresponds to parallel bands in the band structure. Our estimated exciton binding energy of 43 meV indicates that excitons are relatively stable against thermal dissociation at room temperature. Our work provides theoretical insights on the fundamental electronic properties of BAs to guide experimental characterization and device applications.

cond-mat.mtrl-sci