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Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes

Nick Pant·Kyle Bushick·Andrew McAllister·Woncheol Lee·Chris G. Van de Walle·Emmanouil Kioupakis
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Abstract

The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron-phonon coupling and alloy disorder can induce bulk $C$ coefficients as large as $\sim10^{-31}$ cm$^6$/s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. This results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop.

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Nick Pant, Kyle Bushick, Andrew McAllister, Woncheol Lee, Chris G. Van de Walle, Emmanouil Kioupakis. 2024-03-16. Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes. https://doi.org/10.1063/5.0208840

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