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Junyi Yang

Publications and source records attributed to Junyi Yang.

At least 19 recordsLinked to original sources

Gate-tunable electronic properties of epitaxial Bi (111) films using a printable hexagonal boron nitride ionogel

Achieving effective electrostatic control of carrier transport in semimetals remains challenging due to strong screening and multiband effects. We report efficient low voltage top gated control of electronic transport in epitaxial Bi (111) thin films grown on GaAs (111) substrates using a printable hexagonal boron nitride ionogel. Magnetotransport measurements reveal pronounced nonlinear Hall conductivities arising from multiband electron and hole contributions. Remarkably, the application of a small gate voltage (less than 0.4 V in magnitude) leads to a systematic evolution of the low field Hall conductivity slope and the electron-hole compensation point. The response to gate voltage depends upon thickness and temperature. The observed behavior cannot be explained by a conventional Fermi level shift with rigid bands and instead indicates a non rigid band response associated with multiband effects and a gat tunable Rashba spin orbit coupling. Our results establish printable ionogel gating as a powerful approach to tune multiband transport in topological semimetals.

cond-mat.mtrl-sci

ParticleGen: A Multi-Agent System for Particle Effects Generation

Particle systems are widely used in digital entertainment to create dynamic scene elements and visual effects. However, authoring high-quality particle effects remains labor-intensive and demands specialized expertise, requiring practitioners to navigate complex procedural rules and high-dimensional parameter spaces. Recent large language models (LLMs) enable users to specify particle effects through natural language, yet reliably translating high-level creative intent into executable procedural logic and low-level parameters remains difficult. In this work, we present a multi-agent framework for the from-scratch synthesis of structured and editable particle systems from natural language descriptions. Given a text prompt, our framework first generates an initial particle configuration through a decoupled planning and parameterization pipeline, and then iteratively improves the result based on rendered feedback. To support precise and targeted adjustments, we further introduce a diagnostic mechanism that links observed visual artifacts to their underlying procedural causes. We validate our approach in Unreal Engine 5's Niagara system across a diverse set of scenarios, including elemental spells, dynamic natural phenomena, and fireworks. Quantitative and qualitative evaluations show that our method achieves high semantic fidelity and visual quality. By directly synthesizing structured particle simulation logic, our framework reduces the technical barrier to particle effect authoring and improves the efficiency of creative iteration.

cs.GR

Gradient-free Task-Conditioned Retrieval for On-Device In-Context Learning

On-device in-context learning (ICL) relies on pre-inference retrieval to select demonstrations for useful context before downstream model inference. This retrieval must exploit task-specific information while operating over local memories under limited computation, memory, and data-exposure budgets. We propose Conditional Retrieval Alignment (CoRA), a gradient-free framework that converts a frozen encoder into a task-conditioned retriever using paired candidate inputs and outputs. CoRA selects complementary encoder layers, constructs an output-derived conditioning space from candidate memory, and aligns candidate input representations to this space through closed-form ridge regression. Low-rank factorization then produces a compact retrieval basis where candidate outputs are used only during offline index construction, whereas query-time retrieval requires only the query input and precomputed index. We show that CoRA's rank-constrained basis is the optimal low-rank compression of the output-conditioned fitted representation, and derive an exact two-pass streaming construction that avoids materializing the full fitted matrix. We further extend the framework to multimodal exemplar retrieval by incorporating visual representations into the conditioning and retrieval spaces. Experiments across ten textual datasets and four multimodal benchmarks with Llama-3.2-1B, MobileLLM-Pro, OpenFlamingo-3B, and Qwen3.5-2B, as well as end-to-end Raspberry Pi~5 deployment demonstrate that CoRA supports effective task-conditioned retrieval without retriever fine-tuning, backpropagation, or target-model calls.

cs.CL

NeuDW-CIM: a 65-nm 0.8-pJ/Sop Reconfigurable Neuromorphic Compute-in-Memory Macro with Nonlinear Dendrites and K-Winners

This work presents NeuDW-CIM, a highly efficient neuromorphic Compute-in-Memory (CIM) macro for Spiking Neural Networks (SNNs) implemented in 65 nm CMOS. The design introduces a custom twin 9T bit-cell for ternary in-puts/weights and a reconfigurable non-linear In-Memory ADC (IMA). The macro supports two specialized modes: 1) Nonlinear Dendrite (NLD) mode, which utilizes reconfigurable IMA to emulate biological dendritic functions, achieving measured accuracies of 97.2% on N-MNIST and 95.5% on DVS Gesture; and 2) Top-K Winner (KWN) mode, featuring an early-stopping mechanism that reduces IMA conversion latency by 30% and digital LIF latency by 10x. Benefiting from the sparse update in KWN mode, NeuDW-CIM achieves a measured energy efficiency (EE) of 0.8 pJ/SOP (1.6x improvement).

cs.AR

A 32-Channel 3.53-{\mu}W Per Channel Brain-Machine Interface SoC Featuring Dual-Threshold Delta-modulation, In-Memory Spike Detection and Bi-SNN Based Motor Decoding

With the scaling of sensor channel counts, systems confront challenges in frontend data sensing and on-implant data processing. This work presents a 32-channel fully event-based iBMI SoC in 65nm CMOS for an efficient neuromorphic signal processing pipeline. The SoC integrates a 32-channel dual-threshold delta modulation (DTDM) frontend array that provides up to 26x data compression at the frontend, an in-memory computing (IMC) spike detector (SPD) for efficient in-pixel spike detection, and a bipolar LIF-based spiking neural network (Bi-SNN) decoder for on-chip motor intention decoding (MID). Consuming only 3.53 {\mu}W per channel and achieving ~0.62 decoding R2 with a compact 0.034 mm2 per-channel area, the chip enables high-efficiency signal recording, processing, and decoding for implantable devices.

eess.SP

A Reconfigurable Computing In-Memory Macro with Charge-sharing-based Weighted Accumulator

SRAM-based analog computing-in-memory demonstrates outstanding efficiency. However, it faces three critical challenges: significant ADC overhead, high latency for multi-bit inputs, and limited read bitline voltage. To address these issues, this work proposes a multi-bit highly reconfigurable 256x128 in-memory computing array supporting 1-7b input, 2-4b weight, and 1-7b output. Three key innovations are introduced: 1) The IMADC occupies only 3% area overhead, achieving a 9x improvement compared to previous IMADC; 2) The BSCHA reduces latency by 1.9x and 6.6x compared to traditional pulse-width modulation (PWM) and bit-slicing modes, respectively; 3) A dual-8T bitcell enabling ternary weight storage through a decoupled read path, integrated with a read wordline under-driven cascode technique, improves linearity of unit discharge current by 7x and increases the usable read bitline voltage by 3.5x.

cs.AR

TurboMem: High-Performance Lock-Free Memory Pool with Transparent Huge Page Auto-Merging for DPDK

High-speed packet processing on multicore CPUs places extreme demands on memory allocators. In systems like DPDK, fixed-size memory pools back packet buffers (mbufs) to avoid costly dynamic allocation. However, even DPDK's optimized mempool faces scalability limits: lock contention on the shared ring, cache-coherence ping-pong between cores, and heavy TLB pressure from thousands of small pages. To mitigate these issues, DPDK typically uses explicit huge pages (2 MB or 1 GB) for its memory pools. This reduces TLB misses but requires manual configuration and can lead to fragmentation and inflexibility. We propose TurboMem, a novel C++ template-based memory pool that addresses these challenges. TurboMem combines a fully lock-free design (using atomic stacks and per-core local caches) with Transparent Huge Page (THP) auto merging. By automatically promoting pools to 2 MB pages via madvise(MADV_HUGEPAGE), TurboMem achieves the benefits of huge pages without manual setup. We also enforce strict NUMA locality and CPU affinity, so each core allocates and frees objects from its local node. Using Intel VTune on a single-socket 100 Gbps testbed, we show that TurboMem boosts packet throughput by up to 28% while reducing TLB misses by 41% compared to a standard DPDK mempool with explicit huge pages. These results demonstrate that THP auto-merging can outperform manually reserved huge pages in low-fragmentation scenarios, and that modern C++ lock-free programming yields practical gains in data-plane software. Note: The performance claims reported in this preliminary version (up to 28% higher throughput and 41% fewer TLB misses) are based on mock benchmarks. Comprehensive real-system evaluations using Intel VTune are currently underway and will be presented in a future revision.

cs.PF

SRAM-Based Compute-in-Memory Accelerator for Linear-decay Spiking Neural Networks

Spiking Neural Networks (SNNs) have emerged as a biologically inspired alternative to conventional deep networks, offering event-driven and energy-efficient computation. However, their throughput remains constrained by the serial update of neuron membrane states. While many hardware accelerators and Compute-in-Memory (CIM) architectures efficiently parallelize the synaptic operation (W x I) achieving O(1) complexity for matrix-vector multiplication, the subsequent state update step still requires O(N) time to refresh all neuron membrane potentials. This mismatch makes state update the dominant latency and energy bottleneck in SNN inference. To address this challenge, we propose an SRAM-based CIM for SNN with Linear Decay Leaky Integrate-and-Fire (LD-LIF) Neuron that co-optimizes algorithm and hardware. At the algorithmic level, we replace the conventional exponential membrane decay with a linear decay approximation, converting costly multiplications into simple additions while accuracy drops only around 1%. At the architectural level, we introduce an in-memory parallel update scheme that performs in-place decay directly within the SRAM array, eliminating the need for global sequential updates. Evaluated on benchmark SNN workloads, the proposed method achieves a 1.1 x to 16.7 x reduction of SOP energy consumption, while providing 15.9 x to 69 x more energy efficiency, with negligible accuracy loss relative to original decay models. This work highlights that beyond accelerating the (W x I) computation, optimizing state-update dynamics within CIM architectures is essential for scalable, low-power, and real-time neuromorphic processing.

cs.NE

An Event-Driven E-Skin System with Dynamic Binary Scanning and real time SNN Classification

This paper presents a novel hardware system for high-speed, event-sparse sampling-based electronic skin (e-skin)that integrates sensing and neuromorphic computing. The system is built around a 16x16 piezoresistive tactile array with front end and introduces a event-based binary scan search strategy to classify the digits. This event-driven strategy achieves a 12.8x reduction in scan counts, a 38.2x data compression rate and a 28.4x equivalent dynamic range, a 99% data sparsity, drastically reducing the data acquisition overhead. The resulting sparse data stream is processed by a multi-layer convolutional spiking neural network (Conv-SNN) implemented on an FPGA, which requires only 65% of the computation and 15.6% of the weight storage relative to a CNN. Despite these significant efficiency gains, the system maintains a high classification accuracy of 92.11% for real-time handwritten digit recognition. Furthermore, a real neuromorphic tactile dataset using Address Event Representation (AER) is constructed. This work demonstrates a fully integrated, event-driven pipeline from analog sensing to neuromorphic classification, offering an efficient solution for robotic perception and human-computer interaction.

cs.NE

In-Memory ADC-Based Nonlinear Activation Quantization for Efficient In-Memory Computing

In deep networks, operations such as ReLU and hardware-driven clamping often cause activations to accumulate near the edges of the distribution, leading to biased clustering and suboptimal quantization in existing nonlinear (NL) quantization methods. This paper introduces Boundary Suppressed K-Means Quantization (BS-KMQ), a novel NL quantization approach designed to reduce the resolution requirements of analog-to-digital converters (ADCs) in in-memory computing (IMC) systems. By suppressing boundary outliers before clustering, BS-KMQ achieves more balanced and informative NL quantization levels. The resulting NL references are implemented using a reconfigurable in-memory NL-ADC, achieving a 7x area improvement over prior NL-ADC designs. When evaluated on ResNet-18, VGG-16, Inception-V3, and DistilBERT, BS-KMQ achieves at least 3x lower quantization error compared to linear, Lloyd-Max, cumulative distribution function (CDF), and K-means methods. It also improves post-training quantization accuracy by up to 66.8%, 25.4%, 66.6%, and 67.7%, respectively, compared to linear quantization. After low-bit fine-tuning, BS-KMQ maintains competitive accuracy with significantly fewer NL-ADC levels (3/3/4/4b). System-level simulations on ResNet-18 (6/2/3b) demonstrate up to a 4x speedup and 24x energy efficiency improvement over existing IMC accelerators.

cs.AR

1024-Channel 0.8V 23.9-nW/Channel Event-based Compute In-memory Neural Spike Detector

The increasing data rate has become a major issue confronting next-generation intracortical brain-machine interfaces (iBMIs). The scaling number of recording sites requires complex analog wiring and lead to huge digitization power consumption. Compressive event-based neural frontends have been used in high-density neural implants to support the simultaneous recording of more channels. Event-based frontends (EBF) convert recorded signals into asynchronous digital events via delta modulation and can inherently achieve considerable compression. But EBFs are prone to false events that do not correspond to neural spikes. Spike detection (SPD) is a key process in the iBMI pipeline to detect neural spikes and further reduce the data rate. However, conventional digital SPD suffers from the increasing buffer size and frequent memory access power, and conventional spike emphasizers are not compatible with EBFs. In this work we introduced an event-based spike detection (Ev-SPD) algorithm for scalable compressive EBFs. To implement the algorithm effectively, we proposed a novel low-power 10-T eDRAM-SRAM hybrid random-access memory in-memory computing bitcell for event processing. We fabricated the proposed 1024-channel IMC SPD macro in a 65nm process and tested the macro with both synthetic dataset and Neuropixel recordings. The proposed macro achieved a high spike detection accuracy of 96.06% on a synthetic dataset and 95.08% similarity and 0.05 firing pattern MAE on Neuropixel recordings. Our event-based IMC SPD macro achieved a high per channel spike detection energy efficiency of 23.9 nW per channel and an area efficiency of 375 um^2 per channel. Our work presented a SPD scheme compatible with compressive EBFs for high-density iBMIs, achieving ultra-low power consumption with an IMC architecture while maintaining considerable accuracy.

eess.SP

A 33.6-136.2 TOPS/W Nonlinear Analog Computing-In-Memory Macro for Multi-bit LSTM Accelerator in 65 nm CMOS

The energy efficiency of analog computing-in-memory (ACIM) accelerator for recurrent neural networks, particularly long short-term memory (LSTM) network, is limited by the high proportion of nonlinear (NL) operations typically executed digitally. To address this, we propose an LSTM accelerator incorporating an ACIM macro with reconfigurable (1-5 bit) nonlinear in-memory (NLIM) analog-to-digital converter (ADC) to compute NL activations directly in the analog domain using: 1) a dual 9T bitcell with decoupled read/write paths for signed inputs and ternary weight operations; 2) a read-word-line underdrive Cascode (RUDC) technique achieving 2.8X higher read-bitline dynamic range than single-transistor designs (1.4X better over conventional Cascode structure with 7X lower current variation); 3) a dual-supply 6T-SRAM array for efficient multi-bit weight operations and reducing both bitcell count (7.8X) and latency (4X) for 5-bit weight operations. We experimentally demonstrate 5-bit NLIM ADC for approximating NL activations in LSTM cells, achieving average error <1 LSB. Simulation confirms the robustness of NLIM ADC against temperature variations thanks to the replica bias strategy. Our design achieves 92.0% on-chip inference accuracy for a 12-class keyword-spotting task while demonstrating 2.2X higher system-level normalized energy efficiency and 1.6X better normalized area efficiency than state-of-the-art works. The results combine physical measurements of a macro unit-accounting for the majority of LSTM operations (99% linear and 80% nonlinear operations)-with simulations of the remaining components, including additional LSTM and fully connected layers.

cs.AR

Near-Memory Architecture for Threshold-Ordinal Surface-Based Corner Detection of Event Cameras

Event-based Cameras (EBCs) are widely utilized in surveillance and autonomous driving applications due to their high speed and low power consumption. Corners are essential low-level features in event-driven computer vision, and novel algorithms utilizing event-based representations, such as Threshold-Ordinal Surface (TOS), have been developed for corner detection. However, the implementation of these algorithms on resource-constrained edge devices is hindered by significant latency, undermining the advantages of EBCs. To address this challenge, a near-memory architecture for efficient TOS updates (NM-TOS) is proposed. This architecture employs a read-write decoupled 8T SRAM cell and optimizes patch update speed through pipelining. Hardware-software co-optimized peripheral circuits and dynamic voltage and frequency scaling (DVFS) enable power and latency reductions. Compared to traditional digital implementations, our architecture reduces latency/energy by 24.7x/1.2x at Vdd = 1.2 V or 1.93x/6.6x at Vdd = 0.6 V based on 65nm CMOS process. Monte Carlo simulations confirm robust circuit operation, demonstrating zero bit error rate at operating voltages above 0.62 V, with only 0.2% at 0.61 V and 2.5% at 0.6 V. Corner detection evaluation using precision-recall area under curve (AUC) metrics reveals minor AUC reductions of 0.027 and 0.015 at 0.6 V for two popular EBC datasets.

cs.AR

CADC: Crossbar-Aware Dendritic Convolution for Efficient In-memory Computing

Convolutional neural networks (CNNs) are computationally intensive and often accelerated using crossbar-based in-memory computing (IMC) architectures. However, large convolutional layers must be partitioned across multiple crossbars, generating numerous partial sums (psums) that require additional buffer, transfer, and accumulation, thus introducing significant system-level overhead. Inspired by dendritic computing principles from neuroscience, we propose crossbar-aware dendritic convolution (CADC), a novel approach that dramatically increases sparsity in psums by embedding a nonlinear dendritic function (zeroing negative values) directly within crossbar computations. Experimental results demonstrate that CADC significantly reduces psums, eliminating 80% in LeNet-5 on MNIST, 54% in ResNet-18 on CIFAR-10, 66% in VGG-16 on CIFAR-100, and up to 88% in spiking neural networks (SNN) on the DVS Gesture dataset. The induced sparsity from CADC provides two key benefits: (1) enabling zero-compression and zero-skipping, thus reducing buffer and transfer overhead by 29.3% and accumulation overhead by 47.9%; (2) minimizing ADC quantization noise accumulation, resulting in small accuracy degradation - only 0.01% for LeNet-5, 0.1% for ResNet-18, 0.5% for VGG-16, and 0.9% for SNN. Compared to vanilla convolution (vConv), CADC exhibits accuracy changes ranging from +0.11% to +0.19% for LeNet-5, -0.04% to -0.27% for ResNet-18, +0.99% to +1.60% for VGG-16, and -0.57% to +1.32% for SNN, across crossbar sizes from 64x64 to 256x256. Ultimately, a SRAM-based IMC implementation of CADC achieves 2.15 TOPS and 40.8 TOPS/W for ResNet-18 (4/2/4b), realizing an 11x-18x speedup and 1.9x-22.9x improvement in energy efficiency compared to existing IMC accelerators.

cs.AR

Efficient Test-Time Adaptation through Latent Subspace Coefficients Search

Real-world deployment often exposes models to distribution shifts, making test-time adaptation (TTA) critical for robustness. Yet most TTA methods are unfriendly to edge deployment, as they rely on backpropagation, activation buffering, or test-time mini-batches, leading to high latency and memory overhead. We propose \textbf{ELaTTA} (\textit{Efficient Latent Test-Time Adaptation}), a gradient-free framework for single-instance TTA under strict on-device constraints. ELaTTA freezes model weights and adapts each test sample by optimizing a low-dimensional coefficient vector in a source-induced principal latent subspace, pre-computed offline via truncated SVD and stored with negligible overhead. At inference, ELaTTA encourages prediction confidence by optimizing the $k$-D coefficients with CMA-ES, effectively optimizing a Gaussian-smoothed objective and improving stability near decision boundaries. Across six benchmarks and multiple architectures, ELaTTA achieves state-of-the-art accuracy under both strict and continual single-instance protocols, while reducing compute by up to \emph{63$\times$} and peak memory by up to \emph{11$\times$}. We further demonstrate on-device deployment on a ZYNQ-7020 platform.

cs.LG

Trust Region Reward Optimization and Proximal Inverse Reward Optimization Algorithm

Inverse Reinforcement Learning (IRL) learns a reward function to explain expert demonstrations. Modern IRL methods often use the adversarial (minimax) formulation that alternates between reward and policy optimization, which often lead to unstable training. Recent non-adversarial IRL approaches improve stability by jointly learning reward and policy via energy-based formulations but lack formal guarantees. This work bridges this gap. We first present a unified view showing canonical non-adversarial methods explicitly or implicitly maximize the likelihood of expert behavior, which is equivalent to minimizing the expected return gap. This insight leads to our main contribution: Trust Region Reward Optimization (TRRO), a framework that guarantees monotonic improvement in this likelihood via a Minorization-Maximization process. We instantiate TRRO into Proximal Inverse Reward Optimization (PIRO), a practical and stable IRL algorithm. Theoretically, TRRO provides the IRL counterpart to the stability guarantees of Trust Region Policy Optimization (TRPO) in forward RL. Empirically, PIRO matches or surpasses state-of-the-art baselines in reward recovery, policy imitation with high sample efficiency on MuJoCo and Gym-Robotics benchmarks and a real-world animal behavior modeling task.

cs.LG

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi (111) films in the thickness range of 5-32 nm deposited directly on GaAs (111) substrates, without a buffer layer. The quality of Bi films is found to depend on conditions for substrate treatment using Ar+ ion-milling and annealing. Substrates milled at low ion beam currents display poor surface reconstruction after annealing, which hinders the growth of high-quality films. In contrast, substrates milled under optimized conditions led to reconstructed surfaces upon annealing, resulting in epitaxial Bi films with predominantly single-domain orientation. Although epitaxial films formed in both cases, transport measurements indicated significantly higher conductivity for films grown on optimally treated substrates. Measurements at low temperatures suggest that the transport properties are dominated by a surface state with high mobility electrons. Magneto-transport measurements suggest that conductivity and mobility improve progressively with increasing film thickness. For the thinnest 5 nm film, a hole-like state emerges, presumably as the electron-like state is gapped out. These results provide a robust methodology for growing high-quality epitaxial Bi films on GaAs (111) and offer insights into their unique transport properties, and our ability to tune them.

cond-mat.mtrl-sci

Large asymmetric anomalous Nernst effect in the antiferromagnet SrIr$_{0.8}$Sn$_{0.2}$O$_3$

A large anomalous Nernst effect is essential for thermoelectric energy harvesting in the transverse geometry without external magnetic field. It is often connected with anomalous Hall effect, especially when electronic Berry curvature is believed to be the driving force. This approach implicitly assumes the same symmetry for the Nernst and Hall coefficients, which is however not necessarily true. Here we report a large anomalous Nernst effect in antiferromagnetic SrIr$_{0.8}$Sn$_{0.2}$O$_3$ that defies the antisymmetric constraint on the anomalous Hall effect imposed by the Onsager reciprocal relation. The observed spontaneous Nernst thermopower quickly reaches the sub-$\mu$V/K level below the N\'eel transition around 250 K, which is comparable with many topological antiferromagnetic semimetals and far excels other magnetic oxides. Our analysis indicates that the coexistence of significant symmetric and antisymmetric contributions plays a key role, pointing to the importance of extracting both contributions and a new pathway to enhanced anomalous Nernst effect for transverse thermoelectrics

cond-mat.mtrl-sci