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arXiv · 2608.07900

Gate-tunable electronic properties of epitaxial Bi (111) films using a printable hexagonal boron nitride ionogel

Jagannath Jena·Heather E. Kurtz·Siddhesh Ambhire·Justin S. Wood·Fateme Mahdikhany·Junyi Yang·Eugene Ark·Vinod K. Sangwan·J. Samuel Jiang·Steven S. -L. Zhang·Mark C. Hersam·Anand Bhattacharya
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Abstract

Achieving effective electrostatic control of carrier transport in semimetals remains challenging due to strong screening and multiband effects. We report efficient low voltage top gated control of electronic transport in epitaxial Bi (111) thin films grown on GaAs (111) substrates using a printable hexagonal boron nitride ionogel. Magnetotransport measurements reveal pronounced nonlinear Hall conductivities arising from multiband electron and hole contributions. Remarkably, the application of a small gate voltage (less than 0.4 V in magnitude) leads to a systematic evolution of the low field Hall conductivity slope and the electron-hole compensation point. The response to gate voltage depends upon thickness and temperature. The observed behavior cannot be explained by a conventional Fermi level shift with rigid bands and instead indicates a non rigid band response associated with multiband effects and a gat tunable Rashba spin orbit coupling. Our results establish printable ionogel gating as a powerful approach to tune multiband transport in topological semimetals.

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Jagannath Jena, Heather E. Kurtz, Siddhesh Ambhire, Justin S. Wood, Fateme Mahdikhany, Junyi Yang, Eugene Ark, Vinod K. Sangwan, J. Samuel Jiang, Steven S. -L. Zhang, Mark C. Hersam, Anand Bhattacharya. 2026-08-08. Gate-tunable electronic properties of epitaxial Bi (111) films using a printable hexagonal boron nitride ionogel. https://arxiv.org/abs/2608.07900

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