arXiv subjects

Junxia Shi

Publications and source records attributed to Junxia Shi.

8 recordsLinked to original sources

arXiv2022

Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures

We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable) overlapping with the junction is significant and pumping frequency tuned. The pumping scheme that induces transitions is all-electrical: obtained by applying oscillating voltages to control gates and thus enables for scalable qubit architectures. We also report another possibility of valley-qubit manipulation by accumulating non-Abelian valley Berry phase. To model nanodevice we solve the time-dependent Schr\"odinger-Poisson equations in a tight-binding approach and obtain exact time-evolution of the valley-qubit system.

cond-mat.mes-hall↗

arXiv2018

Photo-caloritronics in the THz regime: Photon-assisted thermopower generators

The generation of thermopower in a miniaturized device modeled as a channel connected to reservoirs/contacts maintained at different temperatures is studied in this work. The left reservoir is also coupled to a periodic THz driving source leading to a rearrangement of its internal energy levels. The modified levels are determined using Floquet theory that governs the dynamics of a periodic Hamiltonian. The starting point for the presented thermopower calculations (mirrored in the related thermal gradient controlled current) is the Landauer formula rooted in the transmission formalism. Primarily, we show that while thermally activated electrons can be pumped from the hot reservoir into the cold side as a straightforward manifestation of the Seebeck effect through a difference in their respective Fermi levels, the quantum of charge flow increases in presence of the periodic perturbation. We explain this phenomenon by noting how the periodic driving makes available a greater number of states in the left reservoir that are able to inject electrons into the channel. The calculations also uncover a useful feature whereby the strength of such a thermally-pumped current is amenable through a joint control of the amplitude and frequency of the signal, offering an additional experimentally-adjustable tool to regulate their flow. The calculated results are shown for two classes of materials defined by prototypical linear and quadratic dispersion, with the former capable of furnishing a larger current by virtue of higher available density-of-modes. We close by pointing out possible improvements to the calculation by accounting for dissipative effects in the channel.

cond-mat.mes-hall↗

arXiv2018

The estimation of impact ionization coefficients for $\beta $-Ga$_{2}$O$_{3}$

Impact ionization coefficients of anisotropic monoclinic $\beta $-Ga$_{2}$O$_{3}$ are estimated along four crystallographic directions and the plot for the $\left[ 010 \right]$ direction is shown. The approximation models were fitted to Baraff's universal plot for ionization rate in semiconductors and the values were obtained for $\beta $-Ga$_{2}$O$_{3}$. The phonon mean free path of $\beta $-Ga$_{2}$O$_{3}$ was estimated to be 5.2604 \si{\angstrom} using Gray medium approximation. The phonon group velocity takes the value of longitudinal acoustic phonons. The ionization rate has a maximum value of $ 3.98\times \,10^{6}\,cm^{-1}$ along the $\left[ 010 \right]$ direction over the applied electric field range $(1.43-4)\times10^{7}\,V\,\cdot\,cm^{-1}$. Contrary to expectations, the phonon mean free path along direction $\left[ \bar{2}01 \right]$ is the lowest since it has a lower thermal conductivity to phonon group velocity ratio. The plots were compared with GaN and 4H-SiC, which shows that as bandgap increases the field required for ionization increases. The critical electric field was estimated to be $ 0.921 \times10^{8}\,V\cdot\,cm^{-1}$ along $\left[010 \right]$ direction.

cond-mat.mtrl-sci↗

arXiv2018

Anomalous heat flow in 8-$Pmmn$ borophene with tilted Dirac cones

We analytically establish an anomalous transverse flow of heat in 8-\textit{Pmmn} borophene, one of the several two-dimensional (2D) allotropes of Boron (B). The dispersion of this allotrope contains a pair of anisotropic and tilted Dirac cones which are gapped by placing the 2D \textit{B} sheet under an intense circularly-polarized illumination. A gap in the Dirac dispersion leads to a finite Berry curvature and connected anomalous Hall effects. In the case of thermoelectrics, this manifests as a heat current perpendicular to the temperature gradient - the thermal Hall effect. A quantitative calculation of the attendant thermal Hall conductivity reveals dependence on the intrinsic anisotropy and tilt of the Dirac cone. Further, by estimating the longitudinal thermal conductivity using the Weidemann-Franz law, we also outline steps to compute the thermal Hall angle that gauges the generation efficiency of such transverse heat processes. Finally, we touch upon the idea of thermal rectification wherein the direction of flow of the anomalous heat reverses through a simple switch of the polarization of incident light and is of interest in thermal logic circuits.

cond-mat.mtrl-sci↗

arXiv2018

Spin-dependent magneto-thermopower of narrow-gap lead chalcogenide quantum wells

A semi-classical analysis of magneto-thermopower behaviour, namely, the \textit{Seebeck} and \textit{Nernst} effect (NE) in quantum wells of IV-VI lead salts with significant extrinsic Rashba spin-orbit coupling (RSOC) is performed in this report. In addition to the spin-dependent Seebeck effect that has been observed before, we also theoretically predict a similar spin-delineated behaviour for its thermal analog, the spin-dependent NE. The choice of lead salts follows from a two-fold advantage they offer, in part, to their superior thermoelectric properties, especially PbTe, while their low band gaps and high spin-orbit coupling make them ideal candidates to study \textit{RSOC} in nanostructures. The calculations show a larger longitudinal magneto-thermopower for the spin-up electrons while the transverse components are nearly identical. In contrast, for a magnetic field free case, the related power factor calculations reveal a significantly higher contribution from the spin-down ensemble and suffer a reduction with an increase in the electron density. We also discuss qualitatively the limitations of the semi-classical approach for the extreme case of a high magnetic field and allude to the observed thermopower behaviour when the quantum Hall regime is operational. Finally, techniques to modulate the thermopower are briefly outlined.

cond-mat.mes-hall↗

arXiv2018

Rashba-driven anomalous Nernst conductivity of lead chalcogenide films

The presence of a finite Berry curvature $\left(\Omega\left(k\right)\right)$ leads to anomalous thermal effects. In this letter, we compute the coefficients for the anomalous Nernst effect $\left(ANE\right) $ and its spin analogue, the spin Nernst effect $\left(SNE\right)$ in lead chalcogenide (\textit{PbX}; \textit{X} = S, Se, Te) films. The narrow gapped \textit{PbX} films with a large spin-orbit coupling (\textit{soc}) offer a significant Rashba interaction that gives rise to $ \Omega\left(k\right) $ and the attendant anomalous thermal behaviour. In presence of a temperature gradient, the $ ANE $ and $ SNE $ establish a thermal and spin current and are characterized by their respective coefficients which acquire higher values for a stronger Rashba interaction. We further show that an extrinsic \textit{soc} generated by an in-plane electric field offers a gate-like mechanism to control (and turn-off) the anomalous thermal currents. Finally, we conclude by deriving the efficiency of an $ ANE $-driven low-temperature Carnot heat engine and demonstrate that it can be gainfully optimized in systems with a robust intrinsic \textit{soc} resulting in low carrier effective masses.

cond-mat.mtrl-sci↗

arXiv2017

The electrothermal conductance and heat capacity of black phosphorus

We study a thermal gradient induced current $\left(I_{th}\right)$ flow in potassium-doped two-dimensional anisotropic black phosphorus (BP) with semi-Dirac dispersion. The prototype device is a BP channel clamped between two contacts maintained at unequal temperatures. The choice of BP lies in the predicted efficient thermolectric behaviour. A temperature-induced difference in the Fermi levels of the two contacts drives the current (typified by the electro-thermal conductance) which we calculate using the Landauer transport equation. The current shows an initial rise when the device is operated at lower temperatures. The rise stalls at progressively higher temperatures and $I_{th}$ acquires a plateau-like flat profile indicating a competing effect between a larger number of transmission modes and a corresponding drop in the Fermi level difference between the contacts. The current is computed for both \textit{n}- and \textit{p}-type BP and the difference thereof is attributed to the particle-hole asymmetry. The utility of such calculations lie in conversion of the heat production and an attendant temperature gradient in miniaturized devices to useful electric power and a possible realization of solid-state Peltier cooling. Unlike the flow of $I_{th}$ that removes heat, the ability of a material to maintain a steady temperature is reflected in its heat capacity which is formulated in this work for BP via a Sommerfeld expansion. In the concluding part, we draw a microscopic connection between the two seemingly disparate processes of heat removal and absorption by pinning down their origin to the underlying density of states. Finally, a qualitative analysis of a Carnot-like efficiency of the considered thermoelectric engine is performed drawing upon the previous results on thermal current and heat capacity.

cond-mat.mtrl-sci↗

arXiv2017

Imparity in valley population for single layer transition metal dichalcogenides under elliptical polarization

The illumination of a single-layer transition metal dichalcogenide with an elliptically-polarized light beam is shown to give rise to a differential rate of inter-band carrier excitation between the valence and conduction states around the valley edges, $ K $ and $ K^{'} $. This rate with a linear dependence on the beam ellipticity and inverse of the optical gap manifests as an asymmetric Fermi distribution between the valleys or a non-equilibrium population which under an external field and a Berry curvature induced anomalous velocity results in an externally tunable finite valley Hall current. Surface imperfections that influence the excitation rates are included through the self-consistent Born approximation. Additionally, we show that circular dichroism in the vicinity of the valley edges also exhibits an ellipticity dependence.

cond-mat.mtrl-sci↗