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arXiv · 2209.14445

Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures

Jarosław Pawłowski·John Eric Tiessen·Rockwell Dax·Junxia Shi
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Abstract

We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable) overlapping with the junction is significant and pumping frequency tuned. The pumping scheme that induces transitions is all-electrical: obtained by applying oscillating voltages to control gates and thus enables for scalable qubit architectures. We also report another possibility of valley-qubit manipulation by accumulating non-Abelian valley Berry phase. To model nanodevice we solve the time-dependent Schr\"odinger-Poisson equations in a tight-binding approach and obtain exact time-evolution of the valley-qubit system.

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Jarosław Pawłowski, John Eric Tiessen, Rockwell Dax, Junxia Shi. 2022-09-28. Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures. https://arxiv.org/abs/2209.14445

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