arXiv subjects

Jiang Wu

Publications and source records attributed to Jiang Wu.

98 records · Page 6Linked to original sources

arXiv2019

A Simulation Approach to Multi-station Solar Irradiance Data Considering Temporal Correlations

Solar energy is one of important renewable energy sources and simulation of solar irradiance can be used as input for simulation of photovoltaic (PV) generation. This paper proposes a simulation algorithm of multi-station solar irradiance data considering temporal correlations. First of all, we group all the days of the observed data to k clusters for each station based on their daily features of solar irradiance and the daily states constitute Markov chain of days. Then, we reduce state permutations of different stations before getting Markov Transition Probability Matrix (MTPM). In terms of the observed data and MTPM, the simulation approach is proposed. Finally, we test our approach by applying to solar irradiance data of three stations and show that the properties of simulated data match those of the observed data.

eess.SP↗

arXiv2019

Broadband mid-infrared perfect absorber using fractal Gosper curve

Designing broadband metamaterial perfect absorbers is challenging due to the intrinsically narrow bandwidth of surface plasmon resonances. Here, the paper reports an ultra-broadband metamaterial absorber by using space filling Gosper curve. The optimized result shows an average absorptivity of 95.78% from 2.64 to 9.79 μm across the entire mid-infrared region. Meanwhile, the absorber shows insensitivity to the polarization angle and the incident angle of the incident light. The underlying physical principles, used in our broadband absorber, involve a fractal geometry with multiple scales and a dissipative plasmonic crystal. The broadband perfect absorption can be attributed to multiple electric resonances at different wavelengths supported by a few segments in the defined Gosper curve.

physics.optics↗

arXiv2019

Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector

In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P~I0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photogenerated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm2 under -0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-assisted tunneling, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at ~5.5 um at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3*10e9 cm*Hz1/2/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface, and suppression of surface leakage channels are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.

physics.app-ph↗

arXiv2018

Monolithic quantum-dot distributed feedback laser array on silicon

Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode distributed feedback (DFB) laser array fabricated in InAs/GaAs quantum-dot (QD) gain material epitaxially grown on silicon. CW threshold currents as low as 12 mA and single-mode side mode suppression ratios (SMSRs) as high as 50 dB have been achieved from individual devices in the array. The laser array, compatible with state-of-the-art coarse wavelength division multiplexing (CWDM) systems, has a well-aligned channel spacing of 20 0.2 nm and exhibits a record wavelength coverage range of 100 nm, the full span of the O-band. These results indicate that, for the first time, the performance of lasers epitaxially grown on silicon is elevated to a point approaching real-world CWDM applications, demonstrating the great potential of this technology.

physics.optics↗

arXiv2016

Should we opt for the Black Friday discounted price or wait until the Boxing Day?

We derive an optimal strategy for minimizing the expected loss in the two-period economy when a pivotal decision needs to be made during the first time period and cannot be subsequently reversed. Our interest in the problem has been motivated by the classical shopper's dilemma during the Black Friday promotion period, and our solution crucially relies on the pioneering work of McDonnell and Abbott on the two-envelope paradox.

stat.AP↗

arXiv2016

Integrated Energy Exchange Scheduling for Multi-microgrid System with Electric Vehicles

Electric vehicles (EVs) can be considered as flexible mobile battery storages in microgrids. For multiple microgrids in an area, coordinated scheduling on charging and discharging are required to avoid power exchange spikes between the multimicrogrid system and the main grid. In this paper, a two-stage integrated energy exchange scheduling strategy for multimicrogrid system is presented, which considers EVs as storage devices. Then several dual variables, which are representative of the marginal cost of proper constraints, are utilized to form an updated price, thereby being a modification on the original electricity price. With this updated price signal, a price-based decentralized scheduling strategy is presented for the Microgrid Central Controller (MGCC). Simulation results show that the two-stage scheduling strategy reduces the electricity cost and avoids frequent transitions between battery charging/discharging states. With the proposed decentralized scheduling strategy, each microgrid only needs to solve its local problem and limits the total power exchange within the safe range.

math.OC↗

arXiv2014

Design rules for dislocation filters

The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approx. 40nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approx. 1.0e+04 to 1.0e+05 per square cm.

cond-mat.mtrl-sci↗

arXiv2012

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray Photoemission Spectroscopy and Ultraviolet Photoemission Spectroscopy. The measured Schottky barrier height at the Bi2Se3-H:Si interface was 0.31 eV. The findings pave the way for economically preparing heterojunctions and multilayers of layered compound families of topological insulators.

cond-mat.mtrl-sci↗