arXiv subjects

Jesse Maassen

Publications and source records attributed to Jesse Maassen.

At least 19 recordsLinked to original sources

arXiv2022

The Limits of Thermoelectric Performance with a Bounded Transport Distribution

With the goal of maximizing the thermoelectric (TE) figure of merit $ZT$, Mahan and Sofo [Proc. Natl. Acad. Sci. U.S.A. 93, 7436 (1996)] found that the optimal transport distribution (TD) is a delta function. Materials, however, have TDs that appear to always be finite and non-diverging. Motivated by this observation, this study focuses on deriving what is the optimal bounded TD, which is determined to be a boxcar function for $ZT$ and a Heaviside function for power factor. From these optimal TDs upper limits on $ZT$ and power factor are obtained; the maximum $ZT$ scales with $\Sigma_{\rm max} T /\kappa_l$, where $\Sigma_{\rm max}$ is the TD magnitude and $\kappa_l$ is the lattice thermal conductivity. These results help establish practical upper limits on the performance of TE materials and provide target TDs to guide band/scattering engineering strategies.

cond-mat.mtrl-sci↗

arXiv2022

First-principles analysis of intravalley and intervalley electron-phonon scattering in thermoelectric materials

Intervalley collisions, which scatter electrons from one valley or band to another, can be detrimental to thermoelectric performance in materials with multiple valleys/bands. In this study, density functional theory is used to investigate the electron-phonon scattering characteristics of three lead chalcogenides (PbS, PbSe, PbTe) and three half-Heuslers (ScNiBi, ScPdSb, ZrNiSn), which all possess multiple equivalent conduction valleys, in order to characterize and analyze their intravalley/intervalley components. To elucidate what controls the degree of intravalley and intervalley transitions, the scattering rates are decomposed into the product of the phase space (a measure of how much scattering is possible) and the average electron-phonon coupling. To help guide the search for improved thermoelectric and high-conductivity materials, simple and approximate approaches are demonstrated that can be adopted to identify materials with reduced intervalley scattering, which circumvent the need for computationally-demanding electron-phonon scattering calculations. In addition, the benefits of selecting materials with large-energy zone-edge phonons are explored in the limit $\hbar\omega \gg k_BT$, and found to potentially suppress intervalley processes by up to an order of magnitude, leading to a 70% and 100% increase in conductivity and power factor, respectively.

cond-mat.mtrl-sci↗

arXiv2022

A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current exceeding 10 A/mm, the performance of which is 2-3 times better than all known transistors with semiconductor channels. A record high transconductance of 4 S/mm is also achieved among all transistors with a planar structure. It is found that a high carrier density and high electron velocity both contribute to this remarkably high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I-V and split C-V measurements at room temperature confirm a high carrier density up to 6-7*10^13 /cm2 and a high velocity of about 10^7 cm/s. Ultra-thin oxide semiconductors, with a CNL located deep inside the conduction band, represent a promising new direction for the search of alternative channel materials for high-performance semiconductor devices.

cond-mat.mes-hall↗

arXiv2022

A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/{\mu}m Drain Current

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20 mA/{\mu}m) is achieved in an In2O3 GAA nanoribbon FET with a channel thickness (TIO) of 3.1 nm, channel length (Lch) of 40 nm, channel width (Wch) of 30 nm and dielectric HfO2 of 5 nm. The record high drain current obtained from an In2O3 FET is about one order of magnitude higher than any conventional single-channel semiconductor FETs. This extraordinary drain current and its related on-state performance demonstrate ALD In2O3 is a promising oxide semiconductor channel with great opportunities in BEOL compatible monolithic 3D integration.

physics.app-ph↗

arXiv2020

Thermoelectric calculations of ring-shaped bands in two-dimensional Bi$_2$Te$_3$, Bi$_2$Se$_3$ and Sb$_2$Te$_3$: a comparison of simple scattering approximations

Materials with ring-shaped electronic bands are promising thermoelectric candidates, since their unusual dispersion shape is predicted to give large power factors. While previous calculations of these materials have relied on the assumption of a constant mean-free-path or relaxation time, recent first-principles modeling of electron-phonon scattering suggests that the scattering rates may be better approximated by the electron density-of-states (so-called DOS scattering model). In this work, we use density functional theory to investigate single and double quintuple-layer Bi$_2$Te$_3$, Bi$_2$Se$_3$ and Sb$_2$Te$_3$, with a focus on understanding how the three aforementioned scattering approximations impact thermoelectric performance -- emphasis is placed on the DOS scattering model. The single quintuple-layer materials possess two ring-shaped valence band maxima that provide an abrupt increase in conducting channels, which benefits the power factor. Additionally, below the band edge a ring-shaped minimum, located between the two maxima, is found to further enhance the thermoelectric performance but only with the DOS scattering model. This comes from a sharp drop in the DOS, and thus scattering, just below the ring-shaped minimum. An analytic octic dispersion model is introduced and shown to qualitatively capture the observed features. The double quintuple-layer materials display notably worse thermoelectric properties, since their dispersions are significantly modified compared to the single quintuple-layer case. The benefits of ring-shaped bands are sensitive to the alignment of the two ring maxima and to the degree of ring anisotropy. Overall, single quintuple-layer Bi$_2$Te$_3$ and Bi$_2$Se$_3$ are most promising, with the DOS scattering model giving the highest power factors.

cond-mat.mes-hall↗

arXiv2020

Impact of dimensional crossover on phonon transport in van der Waals materials: a case study of graphite and graphene

Using first-principles modeling, we investigate how phonon transport evolves in layered/van der Waals materials when going from 3D to 2D, or vice versa, by gradually pulling apart the atomic layers in graphite to form graphene. Focus is placed on identifying the features impacting thermal conductivity that are likely shared with other layered materials. The thermal conductivity $\kappa$ of graphite is found to be lower than that of graphene mainly due to changes in the phonon dispersion driven by van der Waals coupling. Specifically, as the atomic layers are brought closer together, the acoustic flexural phonons in graphene form low-energy optical flexural phonons in graphite that possess lower in-plane velocities, density-of-states and phonon occupation, thus reducing $\kappa$. Similar dispersion changes, and impact on thermal conductivity, can be expected in other van der Waals materials when transitioning from 2D to 3D. Our findings also indicate that the selection rules in graphene, which reduce phonon-phonon scattering and contribute to its large $\kappa$, effectively hold as the atomic layers are brought together to form graphite. While the selection rules do not strictly apply to graphite, in practice similar scattering behavior is displayed due in part to the weak inter-layer coupling. This suggests that van der Waals materials, in bulk 3D form, may have lower phonon-phonon scattering rates than other non-layered bulk materials.

cond-mat.mes-hall↗

arXiv2019

Analysis of simple scattering models on the thermoelectric performance of analytical electron dispersions

Recent first-principles electron-phonon scattering calculations of heavily-doped semiconductors suggest that a simple DOS scattering model, wherein the electronic scattering rates are assumed to be proportional to the density-of-states, better approximates the rigorous scattering characteristics compared to the commonly used constant relaxation-time and constant mean-free-path approximations. This work investigates how the thermoelectric properties predicted with the DOS model compare to the other two scattering models, using three analytical electron dispersions (parabolic band in 3D/2D/1D, Kane band in 3D/2D/1D, and ring-shaped quartic band in 2D). Our findings show that the scattering models can lead to significant differences, and can disagree about whether certain band structures can provide benefits. A constant relaxation-time is found to always be optimistic compared to a constant mean-free-path, while the DOS scattering model shows no such clear trend. Notably, the 1D parabolic band and 2D quartic band exhibit the highest power factors with the DOS model, resulting from a rapid decrease in density-of-states, and thus scattering - suggesting a possible strategy for improved thermoelectrics based on engineering band structures with sharp/discontinuous drops in density-of-states. The DOS scattering approximation also suggests that searches for materials with a delta function-like DOS (as a proxy to the transport distribution) or converged bands may yield limited benefits, due to the increase in scattering. This work highlights the importance of simple and accurate scattering models when rigorous ab-initio scattering calculations are not feasible.

cond-mat.mtrl-sci↗

arXiv2019

Unusual thermoelectric transport anisotropy in quasi-2D, rhombohedral GeTe

In this study, we calculate the $T$=300 K scattering and thermoelectric transport properties of rhombohedral GeTe using first-principles modeling. The room-temperature phase of GeTe has a layered structure, with cross-plane and in-plane directions oriented parallel and perpendicular to [111], respectively. Based on rigorous electron-phonon scattering, our transport calculations reveal unusual anisotropic properties; n-type GeTe has a cross-plane electrical conductivity that is roughly 3$\times$ larger than in-plane. p-type GeTe, however, displays opposite anisotropy with in-plane conducting roughly 2$\times$ more than cross-plane, as is expected in quasi-2D materials. The power factor shows the same anisotropy as the electrical conductivity, since the Seebeck coefficient is relatively isotropic. Interestingly, cross-plane n-GeTe shows the largest mobility and power factor approaching 500 cm$^2$/V-s and 32 $\mu$W/cm-K$^2$, respectively. The thermoelectric figure-of-merit, $zT$, is enhanced as a result of this unusual anisotropy in n-GeTe since the lattice thermal conductivity is minimized along cross-plane. This decouples the preferred transport directions of electrons and phonons, leading to a threefold increase in $zT$ along cross-plane compared to in-plane. The n-type anisotropy results from high-velocity electron states formed by Ge p-orbitals that span across the interstitial region. This surprising behavior, that would allow the preferential conduction direction to be controlled by doping, could be observed in other quasi-2D materials and exploited to achieve higher-performance thermoelectrics.

cond-mat.mtrl-sci↗

arXiv2018

Phonon transport across a Si-Ge interface: the role of inelastic bulk scattering

Understanding phonon transport across heterojunctions is important to achieve a wide range of thermal transport properties. Using the McKelvey-Shockley flux method with first-principles modeling, we theoretically investigate the phonon transport properties of a Si-Ge interface with a focus on the role of inelastic bulk phonon processes. We observe significant inelastic scattering near the interface that redistributes the heat among the phonons as a result of non-equilibrium effects driven by the junction. These effects are most pronounced when the length of the junction is comparable to the average phonon mean-free-path. What controls these inelastic processes is elucidated.

cond-mat.mes-hall↗

arXiv2018

LanTraP: A code for calculating thermoelectric transport properties with the Landauer formalism

A code for calculating the semi-classical thermoelectric and electronic transport properties is described. It uses the Landauer transport theory, which is equivalent to the Boltzmann theory, by introducing a central quantity-the distribution of modes. Its usage enables the so-called band-counting algorithm that can speed up the calculation and offers the potential to rapidly screen DFT band structures. Good agreements are found when comparing the results obtained using band-counting and established Fourier-based interpolation methods.

cond-mat.mtrl-sci↗

arXiv2018

Universal Behavior of the Thermoelectric Figure of Merit, zT, vs. Quality Factor

To increase the performance of thermoelectric materials, the electronic parameters in the figure of merit must be improved. In this paper, we use full, numerical band structures and solve the Boltzmann equation in the relaxation time approximation using energy-dependent scattering times informed by first principles simulations. By varying the strength of the electron-phonon coupling or the lattice thermal conductivity, we compute the thermoelectric figure of merit, zT, vs. a generalized thermoelectric quality factor. More than a dozen different complex electronic structures are examined. Surprisingly, we find that at a given quality factor, none provides a better figure of merit than that of a material with a simple, parabolic band and acoustic deformation potential scattering. A qualitative argument for this unexpected finding is presented. This apparent universal behavior suggests that even for complex electronic band structures, the thermoelectric figure of merit depends solely on the ratio of electrical to thermal conductivity; the Seebeck coefficient and Lorenz number need not be considered. This observation should simplify the search for promising new materials, but if exceptions to this behavior can be identified, new paths for increasing thermoelectric material performance will open up.

cond-mat.mtrl-sci↗

arXiv2017

On the Calculation of Lorenz Numbers for Complex Thermoelectric Materials

A first-principles informed approach to the calculation of Lorenz numbers for complex thermoelectric materials is presented and discussed. Example calculations illustrate the importance of using accurate band structures and energy-dependent scattering times. Results obtained by assuming that the scattering rate follows the density-of-states show that in the non-degenerate limit, Lorenz numbers below the commonly assumed lower limit of 2(kB/q)^2 can occur. The physical cause of low Lorenz numbers is explained by the shape of the transport distribution. The numerical and physical issues that need to be addressed in order to produce accurate calculations of the Lorenz number are identified. The results of this study provide a general method that should contribute to the interpretation of measurements of total thermal conductivity and to the search for materials with low Lorenz numbers, which may provide improved thermoelectric figures of merit, zT.

cond-mat.mtrl-sci↗

arXiv2017

Thermoelectric Band Engineering: The Role of Carrier Scattering

Complex electronic band structures, with multiple valleys or bands at the same or similar energies can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the capabilities to realistically assess the benefits and trade-offs associated with these materials. We illustrate the approach using n-type silicon as a model material and show that intervalley scattering is strong. This example shows that the convergence of valleys and bands can improve thermoelectric performance, but the magnitude of the improvement depends sensitively on the relative strengths of intra- and inter-valley electron scattering. Because anisotropy of the band structure also plays an important role, a measure of the benefit of band anisotropy in the presence of strong intervalley scattering is presented.

cond-mat.mtrl-sci↗

arXiv2017

Control of interlayer delocalization in 2H transition metal dichalcogenides

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hopping. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence.

cond-mat.mes-hall↗

arXiv2017

Modeling quasi-ballistic transient thermal transport with spatially sinusoidal heating: a McKelvey-Shockley flux approach

Ballistic phonon effects, arising on length scales comparable to the mean-free-path, result in non-diffusive heat flow and alter the thermal properties of materials. Simple theoretical models that accurately capture non-diffusive transport physics are valuable for experimental analysis, technology design, and providing physical insight. In this work, we utilize and extend the McKelvey-Shockley (McK-S) flux method, a simple and accurate framework, to investigate ballistic effects in transient phonon transport submitted to a spatially sinusoidal heating profile, simulating a transient thermal grating. We begin by extending a previous McK-S formulation to include inelastic scattering, then obtain an analytical solution in the single phonon energy case (gray approximation), and after show how this approach can readily support a full phonon dispersion and mean-free-path distribution. The results agree with experimental data and compare very well to solutions of the phonon Boltzmann transport equation in the diffusive and weakly quasi-ballistic transport regimes. We discuss the role of ballistic and non-equilibrium physics, and show that inelastic scattering is key to retrieving the heat equation solution in the diffusive limit. Overall the McK-S flux method, which takes the form of a diffusion-like equation, proves to be a simple and accurate framework that is applicable from the ballistic to diffusive transport regime.

cond-mat.mes-hall↗

arXiv2016

Thermal Transport at the Nanoscale - A Fourier's Law vs. Phonon Boltzmann Equation Study

Steady-state thermal transport in nanostructures with dimensions comparable to the phonon mean-free-path is examined. Both the case of contacts at different temperatures with no internal heat generation and contacts at the same temperature with internal heat generation are considered. Fourier's Law results are compared to finite volume method solutions of the phonon Boltzmann equation in the gray approximation. When the boundary conditions are properly specified, results obtained using Fourier's Law without modifying the bulk thermal conductivity are in essentially exact quantitative agreement with the phonon Boltzmann equation in the ballistic and diffusive limits. The errors between these two limits are examined in this paper. For the four cases examined, the error in the apparent thermal conductivity as deduced from a correct application of Fourier's Law is less than 6%. We also find that the Fourier's Law results presented here are nearly identical to those obtained from a widely-used ballistic-diffusive approach, but analytically much simpler. Although limited to steady-state conditions with spatial variations in one dimension and to a gray model of phonon transport, the results show that Fourier's Law can be used for linear transport from the diffusive to the ballistic limit. The results also contribute to an understanding of how heat transport at the nanoscale can be understood in terms of the conceptual framework that has been established for electron transport at the nanoscale.

cond-mat.mes-hall↗

arXiv2016

Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio

The Poisson's ratio of a material characterizes its response to uniaxial strain. Materials normally possess a positive Poisson's ratio - they contract laterally when stretched, and expand laterally when compressed. A negative Poisson's ratio is theoretically permissible but has not, with few exceptions of man-made bulk structures, been experimentally observed in any natural materials. Here, we show that the negative Poisson's ratio exists in the low-dimensional natural material black phosphorus, and that our experimental observations are consistent with first principles simulations. Through application of uniaxial strain along zigzag and armchair directions, we find that both interlayer and intralayer negative Poisson's ratios can be obtained in black phosphorus. The phenomenon originates from the puckered structure of its in-plane lattice, together with coupled hinge-like bonding configurations.

cond-mat.mtrl-sci↗

arXiv2015

Modeling ballistic effects in frequency-dependent transient thermal transport using diffusion equations

Understanding ballistic phonon transport effects in transient thermoreflectance experiments and explaining the observed deviations from classical theory remains a challenge. Diffusion equations are simple and computationally efficient but are widely believed to break down when the characteristic length scale is similar or less than the phonon mean-free-path. Building on our prior work, we demonstrate how well-known diffusion equations, namely the hyperbolic heat equation and the Cattaneo equation, can be used to model ballistic phonon effects in frequency-dependent periodic steady-state thermal transport. Our analytical solutions are found to compare excellently to rigorous numerical results of the phonon Boltzmann transport equation. The correct physical boundary conditions can be different from those traditionally used and are paramount for accurately capturing ballistic effects. To illustrate the technique, we consider a simple model problem using two different, commonly-used heating conditions. We demonstrate how this framework can easily handle detailed material properties, by considering the case of bulk silicon using a full phonon dispersion and mean-free-path distribution. This physically transparent approach provides clear insights into the nonequilibrium physics of quasi-ballistic phonon transport and its impact on thermal transport properties.

cond-mat.mes-hall↗