A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/{\mu}m Drain Current

Zhuocheng Zhang; Zehao Lin; Pai-Ying Liao; Vahid Askarpour; Hongyi Dou; Zhongxia Shang; Adam Charnas; Mengwei Si; Sami Alajlouni; Jinhyun Noh; Ali Shakouri; Haiyan Wang; Mark Lundstrom; Jesse Maassen; Peide D. Ye

doi:10.1109/led.2022.3210005

arXiv · 2205.00360

A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/{\mu}m Drain Current

Zhuocheng Zhang·Zehao Lin·Pai-Ying Liao·Vahid Askarpour·Hongyi Dou·Zhongxia Shang·Adam Charnas·Mengwei Si·Sami Alajlouni·Jinhyun Noh·Ali Shakouri·Haiyan Wang·Mark Lundstrom·Jesse Maassen·Peide D. Ye

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Abstract

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20 mA/{\mu}m) is achieved in an In2O3 GAA nanoribbon FET with a channel thickness (TIO) of 3.1 nm, channel length (Lch) of 40 nm, channel width (Wch) of 30 nm and dielectric HfO2 of 5 nm. The record high drain current obtained from an In2O3 FET is about one order of magnitude higher than any conventional single-channel semiconductor FETs. This extraordinary drain current and its related on-state performance demonstrate ALD In2O3 is a promising oxide semiconductor channel with great opportunities in BEOL compatible monolithic 3D integration.

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Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao, Vahid Askarpour, Hongyi Dou, Zhongxia Shang, Adam Charnas, Mengwei Si, Sami Alajlouni, Jinhyun Noh, Ali Shakouri, Haiyan Wang, Mark Lundstrom, Jesse Maassen, Peide D. Ye. 2022-04-30. A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/{\mu}m Drain Current. https://doi.org/10.1109/led.2022.3210005

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