arXiv subjects

Jeremy Levy

Publications and source records attributed to Jeremy Levy.

At least 91 records · Page 5Linked to original sources

arXiv2010

Localized microwave resonances in strained SrTiO3 thin films

The frequency-dependent polar dynamics of strained SrTiO3 films grown on DyScO3 are investigated using time-resolved confocal scanning optical microscopy. Microwave frequency electric fields are synchronized with a mode-locked laser and applied in-plane to the sample, while the temporal response is probed optically. Local spectroscopic information is obtained with <1 um spatial resolution over the frequency range 2-4 GHz. Investigation of the SrTiO3/DyScO3 system reveals resonances that are localized both in space and in frequency.

cond-mat.other↗

arXiv2010

Rewritable nanoscale oxide photodetector

Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.

cond-mat.mes-hall↗

arXiv2010

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation across a potential barrier controlled by the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

cond-mat.mes-hall↗

arXiv2010

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

The interface between polar LaAlO3 and non-polar SrTiO3 exhibits a remarkable variety of electronic behavior associated with the formation of an interfacial quasi-two-dimensional electron gas (q-2DEG). By "sketching" patterns of charge on the top LaAlO3 surface, the LaAlO3/SrTiO3 interface conductance can be controlled with near-atomic spatial resolution. Using this technique, a sketch-based oxide nanotransistor (SketchFET) was demonstrated with a minimum feature size of just two nanometers. Here we report direct measurements of the potential barriers and electronic coupling between nanowire segments within a SketchFET device. Near room temperature, switching is governed by thermally activated field emission from the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

cond-mat.mtrl-sci↗

arXiv2010

Nanoscale rectification at the LaAlO3/SrTiO3 interface

Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful for electro-optic applications or in spintronic devices.

cond-mat.mes-hall↗

arXiv2009

Probing microwave capacitance of self-assembled quantum dots

Self-assembled quantum dots have remarkable optical, electronic and spintronic properties that make them leading candidates for quantum information technologies. Their characterization requires rapid and local determination of both charge and spin degrees of freedom. We present a way to probe the capacitance of small ensembles of quantum dots at microwave frequencies. The technique employs a capacitance sensor based on a microwave microstrip resonator with sensitivity ~10^(-19) F/rt(Hz), high enough to probe single electrons. The integration of this design in a scanning microscope will provide an important tool for investigating single charge and spin dynamics in self-assembled quantum dot systems.

cond-mat.mes-hall↗

arXiv2009

Tailoring Effective Exchange Interactions via Domain Walls in Coupled Heisenberg Rings

The nature of the exchange coupling variation in an antiferromagnetic spin-1/2 system can be used to tailor its ground-state properties. In particular, dimerized Heisenberg rings containing domain walls have localized states which can serve as "flying spin qubits" when the domain walls are moved. We show theoretically that, when two of these rings are coupled, the movement of the domain walls leads to modulation of the effective exchange interaction between the qubits. Appropriately chosen configurations of domain walls can give rise to ferromagnetic effective exchange. We describe how these spin rings may be used as basic building blocks to construct quantum spin systems whose properties are tunable by virtue of the exchange variation within the rings.

quant-ph↗

arXiv2008

Intrinsic Quantum Noise in Faraday Rotation Measurements of a Single Electron Spin

Faraday rotation is one way to realize quantum non-demolition measurement of electron spin in quantum dots. To describe Faraday rotation, semiclassical models are typically used, based on quantized electron spin states and classical electromagnetic fields. Such treatments neglect the entanglement between electronic and photonic degrees of freedom that produce intrinsic quantum noise, limiting the ultimate sensitivity of this technique. We present a fully quantum-mechanical description of Faraday rotation, and quantify this intrinsic noise. A method for measuring the purity of a given spin state is suggested based on this analysis.

quant-ph↗

arXiv2006

Flying Spin Qubits

We present a method for encoding and transporting qubits within a dimerized Heisenberg spin-1/2 chain. Logical qubits are localized at the domain walls that separate the two possible dimerized states. The domain walls can be moved to produce "flying spin qubits". The topological nature of these states makes them stable against a wide class of perturbations. Pairs of domain walls can be used to generate Einstein-Podolsky-Rosen pairs of entangled qubits. We discuss speed limitations within an exactly solvable three-spin model and describe a possible physical realization using quantum dot arrays.

quant-ph↗

arXiv2006

All-electrical control of single ion spins in a semiconductor

We propose a method for all-electrical initialization, control and readout of the spin of single ions substituted into a semiconductor. Mn ions in GaAs form a natural example. In the ion's ground state the Mn core spin magnetic moment locks antiparallel to the spin and orbital magnetic moment of a bound valence hole from the GaAs host. Direct electrical manipulation of the ion spin is possible because electric fields manipulate the orbital wave function of the hole, and through the spin-orbit coupling the spin is reoriented as well. Coupling two or more ion spins can be achieved using electrical gates to control the size of the valence hole wave function near the semiconductor surface. This proposal for coherent manipulation of individual ionic spins and controlled coupling of ionic spins via electrical gates alone may find applications in extremely high density information storage and in scalable coherent or quantum information processing.

quant-ph↗

arXiv2005

Quantum Dot Cluster State Computing with Encoded Qubits

A class of architectures is advanced for cluster state quantum computation using quantum dots. These architectures include using single and multiple dots as logical qubits. Special attention is given to the supercoherent qubits introduced by Bacon, Brown, and Whaley [Phys. Rev. Lett. {\bf 87}, 247902 (2001)] for which we discuss the effects of various errors, and present means of error protection.

quant-ph↗

arXiv2004

Development and Performance of the Nanoworkbench: A Four Tip STM for Electrical Conductivity Measurements Down to Sub-micrometer Scales

A multiple-tip ultra-high vacuum (UHV) scanning tunneling microscope (MT-STM) with a scanning electron microscope (SEM) for imaging and molecular-beam epitaxy growth capabilities has been developed. This instrument (nanoworkbench) is used to perform four-point probe conductivity measurements at micrometer spatial dimension. The system is composed of four chambers, the multiple-tip STM/SEM chamber, a surface analysis and preparation chamber, a molecular-beam epitaxy chamber and a load-lock chamber for fast transfer of samples and probes. The four chambers are interconnected by a unique transfer system based on a sample box with integrated heating and temperature-measuring capabilities. We demonstrate the operation and the performance of the nanoworkbench with STM imaging on graphite and with four-point-probe conductivity measurements on a silicon-on-insulator (SOI) crystal. The creation of a local FET, whose dimension and localization are respectively determined by the spacing between the probes and their position on the SOI surface, is demonstrated.

cond-mat.mtrl-sci↗

arXiv2004

Formation and Thermal Stability of sub-10 nm Carbon Templates on Si(100)

We report a lithographic process for creating high-resolution (<10 nm) carbon templates on Si(100). A scanning electron microscope, operating under low vacuum (10E-6 mbar), produces a carbon-containing deposit ("contamination resist") on the silicon surface via electron-stimulated dissociation of ambient hydrocarbons, water and other adsorbed molecules. Subsequent annealing at temperatures up to 1320 K in ultra-high vacuum removes SiO2 and other contaminants, with no observable change in dot shape. The annealed structures are compatible with subsequent growth of semiconductors and complex oxides. Carbon dots with diameter as low as 3.5 nm are obtained with a 200 us electron-beam exposure time.

cond-mat.mtrl-sci↗

arXiv2003

Quantum computing with antiferromagnetic spin clusters

We show that a wide range of spin clusters with antiferromagnetic intracluster exchange interaction allows one to define a qubit. For these spin cluster qubits, initialization, quantum gate operation, and readout are possible using the same techniques as for single spins. Quantum gate operation for the spin cluster qubit does not require control over the intracluster exchange interaction. Electric and magnetic fields necessary to effect quantum gates need only be controlled on the length scale of the spin cluster rather than the scale for a single spin. Here, we calculate the energy gap separating the logical qubit states from the next excited state and the matrix elements which determine quantum gate operation times. We discuss spin cluster qubits formed by one- and two-dimensional arrays of s=1/2 spins as well as clusters formed by spins s>1/2. We illustrate the advantages of spin cluster qubits for various suggested implementations of spin qubits and analyze the scaling of decoherence time with spin cluster size.

cond-mat.mes-hall↗

arXiv2003

Quantum computing with spin cluster qubits

We study the low energy states of finite spin chains with isotropic (Heisenberg) and anisotropic (XY and Ising-like) exchange interaction with uniform and non-uniform coupling constants. We show that for an odd number of sites a spin cluster qubit can be defined in terms of the ground state doublet. This qubit is remarkably insensitive to the placement and coupling anisotropy of spins within the cluster. One- and two-qubit quantum gates can be generated by magnetic fields and inter-cluster exchange, and leakage during quantum gate operation is small. Spin cluster qubits inherit the long decoherence times and short gate operation times of single spins. Control of single spins is hence not necessary for the realization of universal quantum gates.

cond-mat.mes-hall↗

arXiv2002

Oxide-Semiconductor Materials for Quantum Computation

Scalable fault-tolerant quantum computer architectures require quantum gates that operate within a small fraction of the qubit decoherence time and with high accuracy over a bandwidth set by the decoherence rate. Electron spin quantum bits in Si are promising because of long decoherence times (~0.5 ms), but electrical gating schemes still seem problematic. Oxide-semiconductor heterostructures have the potential for precise electrical control of gate operations in the semiconductor, using optical rectification in the ferroelectric oxide. Accurate (~80 dB), local (~10 nm), dynamic (>THz) and programmable optical control over electric polarization in the ferroelectric can be achieved using existing technology. Optical techniques may also be useful in rapid initialization of the quantum computer, and for providing a source of initialized qubits to use for quantum error correction. Advantages of optical methods will be discussed within a framework proposed for a quantum information processor using ferroelectrically coupled electron spins and Ge quantum dots in Si.

quant-ph↗

arXiv2002

Local Ferroelectricity in SrTiO_3 Thin Films

The temperature-dependent polarization of SrTiO_3 thin films is investigated using confocal scanning optical microscopy. A homogeneous out-of-plane and inhomogeneous in-plane ferroelectric phase are identified from images of the linear electrooptic response. Both hysteretic and non-hysteretic behavior are observed under a dc bias field. Unlike classical transitions in bulk ferroelectrics, local ferroelectricity is observed at temperatures far above the dielectric permittivity maximum. The results demonstrate the utility of local probe experiments in understanding inhomogeneous ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2002

Universal quantum computation with spin-1/2 pairs and Heisenberg exchange

An efficient and intuitive framework for universal quantum computation is presented that uses pairs of spin-1/2 particles to form logical qubits and a single physical interaction, Heisenberg exchange, to produce all gate operations. Only two Heisenberg gate operations are required to produce a controlled pi-phase shift, compared to 19 for exchange-only proposals employing three spins. Evolved from well-studied decoherence-free subspaces, this architecture inherits immunity from collective decoherence mechanisms. The simplicity and adaptability of this approach should make it attractive for spin-based quantum computing architectures.

quant-ph↗