J. Lančok | arXiv Science

arXiv2026

Defect-controlled electrical and optical properties of CrN thin films: experiment and first-principles study

Thin chromium nitride (CrN) films were deposited by RF magnetron sputtering in a reactive atmosphere of Ar-N$_2$ on fused silica and MgO (001) substrates at temperatures between 400 $^o$C and 800 $^o$C. The influence of nitrogen content and substrate temperature on structural, electrical, and optical properties was systematically investigated. The overstoichiometric CrN films exhibited a reduced resistivity below 6 m$Ω\cdot$cm with stable p-type behavior, while increasing the substrate temperature above 600 $^o$C induced a transition to n-type conductivity. Spectroscopic ellipsometry in the UV-Vis-NIR and infrared spectral ranges revealed a strong dependence of the dielectric function and the absorption edge on film stoichiometry and deposition conditions. Structural characterization using X-ray diffraction and atomic force microscopy confirmed substrate-dependent crystallinity and grain growth. Density functional theory calculations showed that cation and anion vacancies strongly modify the electronic structure and optical response, explaining the experimentally observed conductivity transitions. The results demonstrate that the deposition parameters provide an effective means to tailor CrN thin films via defect engineering.

cond-mat.mtrl-sci↗

arXiv2023

Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations

4H silicon carbide (SiC) polytype is preferred over other SiC polytypes for high-power, high-voltage, and high-frequency applications due to its superior electrical, thermal, and structural characteristics. In this manuscript, we provide a comprehensive study of the spin coupling dynamic between conduction electrons and nitrogen (N) donors in monocrystalline 4H SiC with various concentrations of uncompensated N donors from 10^17 cm^-3 to 5x10^19 cm^-3 by continuous wave, pulsed EPR, and microwave perturbation techniques at T=4.2-300 K. At low temperatures two triplets due to N donors in cubic (Nk) hexagonal (Nh) positions and triplet arisen from spin-interaction between Nh and Nk were observed in 4H SiC having Nd-Na=10^17 cm^-3. A single S-line (S=1/2) dominates the EPR spectra in all investigated 4H SiC monocrystals at high temperatures. It was established that this line occurs due to the exchange coupling of localized electrons (dominate at low temperatures) and non-localized electrons (dominate at high temperatures). The localized electrons were attributed to Nh for Nd-Na=10^17 cm^-3 and Nk donors for Nd-Na>=5x10^18 cm^-3. We have concluded that the conduction electrons in 4H SiC monocrystals are characterized by gpar=2.0053(3) gper=2.0011(3) for Nd-Na<=5x10^18 cm^-3 and gpar=2.0057(3) and gper=2.0019(3) for Nd-Na=5x10^19 cm^-3. Using the theoretical fitting of the temperature variation of S-line EPR linewidth in 4H SiC having Nd-Na<5x10^18 cm-^3, the energy levels of 57-65 meV that correlate with the valley-orbit splitting values for Nk donors in 4H SiC monocrystals were obtained.

cond-mat.mtrl-sci↗