arXiv subjects

Hongbin Yang

Publications and source records attributed to Hongbin Yang.

12 recordsLinked to original sources

arXiv2026

Three-dimensional imaging of oxygen dopant distribution in Sr$_2$CuO$_{3+\delta}$ by electron ptychography

Oxygen dopants play a critical role in tuning the properties of cuprate superconductors, yet it is challenging to visualize them at the atomic scale. Here, we use multislice electron ptychography to directly image oxygen dopants in a Sr2CuO3+delta film. We observe oxygen dopants at interstitial sites between the Cu-O chains, with a strong preference for clustering in tensile-strained regions, which are often associated with dislocations and interfacial steps. These findings indicate that the oxygen dopant distribution in cuprates is not random but rather sensitive to strain field, suggesting strain as a doping tuning parameter.

cond-mat.mtrl-sci↗

arXiv2026

Synthesis and Characterization of Atomically-Sharp Superconductor-Dielectric Interface

Modification of superconductor-dielectric interfaces is known to strongly impact coherence times of superconducting quantum devices. This relationship is thought to arise from differences in the concentration of "two-level system" defects in the disordered dielectrics and superconductor-dielectric interfaces; these defects couple to electromagnetic modes in the device and cause dissipation. Zirconium oxide barrier layers on niobium have emerged as a promising pathway to low-loss interfaces in recent years, evidently due to the crystalline nature of these layers in comparison to the amorphous niobium native oxide. We explain the unique ability of zirconium oxide to form a crystalline layer, to maintain a sharp interface with metallic niobium, and to prevent niobium oxide re-growth in terms of the chemical properties of ZrO$_2$ and the Nb-Zr-O ternary system. We demonstrate a new method to grow air-stable zirconium oxide layers on niobium with a higher level of crystallinity and a sharper oxide-metal interface than previously shown, and provide the first comprehensive microscopic analysis of ZrO$_2$ capping layer properties. These developments pave the way toward vital performance advances in superconducting quantum devices.

cond-mat.mtrl-sci↗

arXiv2026

Enabling Deterministic User-Level Interrupts in Real-Time Processors via Hardware Extension

The growing complexity of real-time embedded systems demands strong isolation of software components into separate protection domains to reduce attack surfaces and limit fault propagation. However, application-supplied device interrupt handlers -- even untrusted -- have to remain in the kernel to minimize interrupt latency, undermining security and burdening manual certifications. Current hardware extensions accelerate interrupts only when the target protection domain is scheduled by the kernel; consequently, they are limited to improving average-case performance but not worst-case latency, and do not meet the requirements of critical real-time applications such as autonomous vehicles or robots. To overcome this limitation, we propose a novel hardware extension that enables direct, deterministic switching to the appropriate protection domain upon user-level interrupt arrival -- without kernel intervention -- even when that domain is dormant. Our hardware extension reduces worst-case latency by more than 50x with a 19% increase in core area (2% of total die area) and 4.1% increase in dynamic power. To the best of our knowledge, this is the first integrated mechanism to guarantee user-level interrupt delivery with a nanosecond-scale yet bounded worst-case latency.

cs.CR↗

arXiv2025

Disorder-broadened topological Hall phase and anomalous Hall scaling in FeGe

Magnetic skyrmions are topologically protected spin textures that are promising candidates for low-power spintronic memory and logic devices. Realizing skyrmion-based devices requires an understanding of how structural disorder affects their stability and transport properties. This study uses Ne$^{+}$ ion irradiation at fluences from $10^{11}$ to $10^{14}$ ions-cm$^{-2}$ to systematically vary defect densities in 80 nm epitaxial FeGe films and quantify the resulting modifications to magnetic phase boundaries and electronic scattering. Temperature- and field-dependent Hall measurements reveal that increasing disorder progressively extends the topological Hall signal from a narrow window near 200\~K in pristine films down to 4\~K at the highest fluence, with peak amplitude more than doubling. Simultaneously, the anomalous Hall effect transitions from quadratic Berry curvature scaling to linear skew scattering behavior, with the skew coefficient increasing threefold. These results establish quantitative correlations between defect concentration, skyrmion phase space, and transport mechanisms in a chiral magnet. It demonstrates that ion-beam modification provides systematic control over both topological texture stability and electrical detectability.

cond-mat.mtrl-sci↗

arXiv2024

Structural Properties and Recrystallization Effects in Ion Beam Modified B20-type FeGe Films

Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions -- nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion-antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating developing methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in-situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from approximately 150$^{\circ}$ C to 250$^{\circ}$C. Finally, we describe the crystallization kinetics using the Johnson-Mehl-Avrami-Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate.

cond-mat.mtrl-sci↗

arXiv2024

Inelastic electron scattering at large angles: the phonon polariton contribution

We explore the inelastic electron scattering in SrTiO3, PbTiO3, and SiC in their phonon energy range, challenging the assumption that phonon polaritons are excluded at large angles in high-resolution transmission electron energy-loss spectroscopy. We demonstrate that through multiple scattering, the electron beam can excite both phonons and phonon polaritons, and the relative proportion of each varies depending on the structure factor and scattering angle. Integrating dielectric theory, density functional theory, and multi-slice simulations, we provide a comprehensive framework for understanding these interactions in materials with polar optical phonons.

cond-mat.mtrl-sci↗

arXiv2023

Real-Space Visualization of Frequency-Dependent Anisotropy of Atomic Vibrations

The underlying dielectric properties of materials, intertwined with intriguing phenomena such as topological polariton modes and anisotropic thermal conductivities, stem from the anisotropy in atomic vibrations. Conventionally, X-ray diffraction techniques have been employed to estimate thermal ellipsoids of distinct elements, albeit lacking the desired spatial and energy resolutions. Here we introduce a novel approach utilizing the dark-field monochromated electron energy-loss spectroscopy for momentum-selective vibrational spectroscopy, enabling the cartographic delineation of variations of phonon polarization vectors. By applying this technique to centrosymmetric cubic-phase strontium titanate, we successfully discern two types of oxygen atoms exhibiting contrasting vibrational anisotropies below and above 60 meV due to their frequency-linked thermal ellipsoids. This method establishes a new pathway to visualize phonon eigenvectors at specific crystalline sites for diverse elements, thus delving into uncharted realms of dielectric, optical, and thermal property investigations with unprecedented spatial resolutions.

cond-mat.mtrl-sci↗

arXiv2022

Observation of room-temperature ferroelectricity in elemental Te nanowires

Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in elemental materials, causing a lack of spontaneous electric polarization. Here, we report an unexpected room-temperature ferroelectricity in few-chain Te nanowires. Out-of-plane ferroelectric loops and domain reversal are observed by piezoresponse force microscopy. Through density functional theory, we attribute the ferroelectricity to the ion-displacement created by the interlayer interaction between lone pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, supporting a self-gated field-effect transistor. It enables a nonvolatile memory with high in-plane mobility, zero supply voltage, multilevel resistive states, and a high on/off ratio. Our work provides new opportunities for elemental ferroelectrics with polar structures and paves a way towards applications such as low-power dissipation electronics and computing-in-memory devices.

cond-mat.mtrl-sci↗

arXiv2022

Simultaneous imaging of dopants and free charge carriers by STEM-EELS

Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with high-enough spatial and spectral resolution. Here, we demonstrate nanoscale imaging of both dopants and free charge carriers in La-doped BaSnO3 (BLSO) using high-resolution electron energy-loss spectroscopy (EELS). By analyzing both high- and low-energy excitations in EELS, we reveal chemical and electronic inhomogeneities within a single BLSO nanocrystal. The inhomogeneous doping leads to distinctive localized infrared surface plasmons, including a novel plasmon mode that is highly confined between high- and low-doping regions. We further quantify the carrier density, effective mass, and dopant activation percentage from EELS data and transport measurements on the bulk single crystals of BLSO. These results represent a unique way of studying heterogeneities in solids, understanding structure-property relationships at the nanoscale, and opening the way to leveraging nanoscale doping texture in the design of nanophotonic devices.

cond-mat.mtrl-sci↗

arXiv2022

Electronic structure of Humble defects in Ge and Ge$_{0.8}$Si$_{0.2}$

The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111} and {113} planar defects in Si and Ge. Among the {001} planar defects, the Humble defect, known for some time to occur in Ge, has recently also been observed in Si/Ge alloys, but the details of its electronic structure remain poorly understood. Here we perform first-principles density functional calculations to study Humble defects in both Ge and Ge$_{0.8}$Si$_{0.2}$. We also measure the Si L$_{2,3}$-edge electron energy loss spectra both at the defect and in a bulk-like region far from the defect, and compare with theoretical calculations on corresponding Si sites in our first-principles calculations. We find that inclusion of core-hole effects in the theory is essential for reproducing the observed L$_{2,3}$ edge spectra, and that once they are included, the results provide a set of fingerprints for different types of local atomic bonding environments in Ge$_{0.8}$Si$_{0.2}$. Our first-principles calculations reveal that the Humble defects have a tendency to enlarge the electronic band gap, which may have potential uses in band engineering. The use of hybrid functionals for an improved description of the band gap in these systems is also discussed.

cond-mat.mtrl-sci↗

arXiv2021

Low-loss tunable infrared plasmons in the high-mobility perovskite (Ba,La)SnO$_3$

BaSnO$_3$ exhibits the highest carrier mobility among perovskite oxides, making it ideal for oxide electronics. Collective charge carrier oscillations, plasmons, are expected to arise in this material, thus providing a tool to control the nanoscale optical field for optoelectronics applications. Here, we demonstrate the existence of relatively long-lived plasmons supported by high-mobility charge carriers in La-doped BaSnO$_3$ (BLSO). By exploiting the high spatial and energy resolution of electron energy-loss spectroscopy with a focused beam in a scanning transmission electron microscope, we systematically investigate the dispersion, confinement ratio, and damping of infrared localized surface plasmons (LSP) in BLSO nanoparticles. We find that the LSPs in BLSO are highly spatially confined compared to those sustained by noble metals and have relatively low loss and high quality factor compared to other doped oxides. Further analysis clarifies the relation between plasmon damping and carrier mobility in BLSO. Our results support the use of nanostructured degenerate semiconductors for plasmonic applications in the infrared region and establish a relevant alternative to more traditional plasmonic materials.

physics.app-ph↗

arXiv2021

Humble planar defects in SiGe nanopillars

We report a new \{001\} planar defect found in SiGe nanopillars. The defect structure, determined by atomic resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigated several possible variants of the Humble structure using first principles calculations and found that the one lowest in energy was also in best agreement with the STEM images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.

cond-mat.mtrl-sci↗